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Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers

Semiconductors (Woodbury, N.Y.), 2021-09, Vol.55 (9), p.705-709

2021

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Nonlinearity of Volt–Ampere Characteristics of Homogeneous Compensated Detector GaAs Structures

Technical physics letters, 2019-06, Vol.45 (6), p.566-569

2019

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Radiopulse generation in dispersive nonlinear transmission lines with GaAs S-diodes

Journal of physics. Conference series, 2021-11, Vol.2094 (2), p.22065

2021

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The influence of the deep level type on a switching time delay of GaAs avalanche S-diodes

Journal of physics. Conference series, 2018-12, Vol.1124 (7), p.71013

2018

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Resonant tunneling of charge carriers in InGaN/GaN superlattice

Journal of physics. Conference series, 2017-06, Vol.864 (1), p.12052

2017

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Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs

Technical physics letters, 2018-06, Vol.44 (6), p.465-468

2018

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Photoelectrical characteristics of TiO2-N-SI heterostructures

Microwave and optical technology letters, 2016-05, Vol.58 (5), p.1113-1116

2016

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On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.232-238

2017

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Luminescence of Ga2O3 Crystals Excited with a Runaway Electron Beam

Optics and spectroscopy, 2017-12, Vol.123 (6), p.867-870

2017

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Comparative analysis of efficiency droop in InGaN/GaN light- emitting diodes for electrical and optical pumping conditions

Journal of physics. Conference series, 2014-01, Vol.541 (1), p.12055-4

2014

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Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures

Semiconductors (Woodbury, N.Y.), 2016-09, Vol.50 (9), p.1156-1162

2016

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Photoelectrical characteristics of Ga2O3-GaAs structures

Journal of physics. Conference series, 2014, Vol.541 (1)

2014

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Study of electric field distribution in AlGalnP light-emitting diode by Kelvin probe force microscopy

Journal of physics. Conference series, 2014-10, Vol.541 (1), p.12057

2014

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Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

Semiconductors (Woodbury, N.Y.), 2013-10, Vol.47 (10), p.1382-1386

2013

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Study of electric field distribution in AlGaInP light-emitting diode by Kelvin probe force microscopy

Journal of physics. Conference series, 2014, Vol.541, p.1-4

2014

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Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells

Journal of physics. Conference series, 2014-01, Vol.541 (1), p.12083-4

2014

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Chromium diffusion in GaAs in an open system

Inorganic materials, 2008-09, Vol.44 (9), p.918-921

2008

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Conduction mechanism of metal-TiO2–Si structures

Chinese journal of physics (Taipei), 2017-02, Vol.55 (1), p.59-63

2017

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Photoelectrical characteristics of TiO 2 ‐N‐SI heterostructures

Microwave and optical technology letters, 2016-05, Vol.58 (5), p.1113-1116

2016

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Conduction in titanium dioxide films and metal–TiO2–Si structures

Semiconductors (Woodbury, N.Y.), 2016-08, Vol.50 (8), p.1015-1019

2016

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Luminescence of Ga{sub 2}O{sub 3} Crystals Excited with a Runaway Electron Beam

Optics and spectroscopy, 2017-12, Vol.123 (6)

2017

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Conduction in titanium dioxide films and metal–TiO{sub 2}–Si structures

Semiconductors (Woodbury, N.Y.), 2016-08, Vol.50 (8)

2016

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Photoelectrical characteristics of Ga 2 O 3 -GaAs structures

Journal of physics. Conference series, 2014-10, Vol.541, p.12029

2014

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Photoelectric characteristics of metal-Ga{sub 2}O{sub 3}-GaAs structures

Semiconductors (Woodbury, N.Y.), 2015-03, Vol.49 (3)

2015

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Photoelectrical characteristics of Ga sub(2)O sub(3)-GaAs structures

Journal of physics. Conference series, 2014-01, Vol.541, p.1-4

2014

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Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers

Nonlinearity of Volt–Ampere Characteristics of Homogeneous Compensated Detector GaAs Structures

Radiopulse generation in dispersive nonlinear transmission lines with GaAs S-diodes

The influence of the deep level type on a switching time delay of GaAs avalanche S-diodes

Resonant tunneling of charge carriers in InGaN/GaN superlattice

Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs

Photoelectrical characteristics of TiO2-N-SI heterostructures

On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

Luminescence of Ga2O3 Crystals Excited with a Runaway Electron Beam

Comparative analysis of efficiency droop in InGaN/GaN light- emitting diodes for electrical and optical pumping conditions

Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures

Photoelectrical characteristics of Ga2O3-GaAs structures

Study of electric field distribution in AlGalnP light-emitting diode by Kelvin probe force microscopy

Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

Study of electric field distribution in AlGaInP light-emitting diode by Kelvin probe force microscopy

Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells

Chromium diffusion in GaAs in an open system

Conduction mechanism of metal-TiO2–Si structures

Photoelectrical characteristics of TiO 2 ‐N‐SI heterostructures

Conduction in titanium dioxide films and metal–TiO2–Si structures

Luminescence of Ga{sub 2}O{sub 3} Crystals Excited with a Runaway Electron Beam

Conduction in titanium dioxide films and metal–TiO{sub 2}–Si structures

Photoelectrical characteristics of Ga 2 O 3 -GaAs structures

Photoelectric characteristics of metal-Ga{sub 2}O{sub 3}-GaAs structures

Photoelectrical characteristics of Ga sub(2)O sub(3)-GaAs structures

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