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Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Applied physics letters, 2022-02, Vol.120 (8)

2022

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TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

IEEE electron device letters, 2008-10, Vol.29 (10), p.1098-1100

2008

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Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Microelectronics and reliability, 2011-02, Vol.51 (2), p.201-206

2011

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High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Microelectronics and reliability, 2010-06, Vol.50 (6), p.758-762

2010

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Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2667-2674

2012

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Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Applied physics letters, 2009-07, Vol.95 (3), p.033510-033510-3

2009

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Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-7

2024

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A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees

2014 Integrated Communications, Navigation and Surveillance Conference (ICNS) Conference Proceedings, 2014, p.U1-1-U1-12

2014

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Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23)

2010

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Electromigration in strapped metal layers with large dimensions for lateral power device applications

2014 IEEE International Reliability Physics Symposium, 2014, p.2A.4.1-2A.4.4

2014

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Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.890-895

2019

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Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.P21-1-P21-6

2022

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Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2012-04, Vol.100 (17), p.172109-172109-3

2012

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Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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Strapped Cu interconnect for enhancing electromigration limit for power device application

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.368-371

2020

Volltextzugriff (PDF)

Current Crowding Impact on Electromigration in Al Interconnects

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-6

2019

Volltextzugriff (PDF)

Application reliability validation of GaN power devices

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.20.5.1-20.5.4

2016

Volltextzugriff (PDF)

Electromigration current limit relaxation for power device interconnects

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.68-71

2018

Volltextzugriff (PDF)

Traps and defects in pre- and post- stressed AlGaN-GaN high electron mobility transistors

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1611-1613

2011

Volltextzugriff (PDF)

Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

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Impact of self-heating effect in hot carrier injection modeling

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.315-318

2018

Volltextzugriff (PDF)

Glitch Recall: A Hardware Trojan Exploiting Natural Glitches in Logic Circuits

Information Security Applications, p.150-161

Volltextzugriff (PDF)

Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors

2007 IEEE International Electron Devices Meeting, 2007, p.385-388

2007

Volltextzugriff (PDF)

Impact of gate placement on RF power degradation in GaN high electron mobility transistors

Microelectronics and reliability, 2012, Vol.52 (1), p.33-38

2012

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Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23), p.233509-233509-3

2010

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Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)

A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Electromigration in strapped metal layers with large dimensions for lateral power device applications

Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

Strapped Cu interconnect for enhancing electromigration limit for power device application

Current Crowding Impact on Electromigration in Al Interconnects

Application reliability validation of GaN power devices

Electromigration current limit relaxation for power device interconnects

Traps and defects in pre- and post- stressed AlGaN-GaN high electron mobility transistors

Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

Impact of self-heating effect in hot carrier injection modeling

Glitch Recall: A Hardware Trojan Exploiting Natural Glitches in Logic Circuits

Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors

Impact of gate placement on RF power degradation in GaN high electron mobility transistors

Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

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