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Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3216-3222

2013

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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.547-556

2008

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Electrical TCAD Simulations of a Germanium pMOSFET Technology

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2539-2546

2010

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Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.216-221

2021

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Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2287-2296

2008

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Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1765-1770

2018

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High-Performance Deep Submicron Ge pMOSFETs With Halo Implants

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2503-2511

2007

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Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1054-1059

2013

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Influence of GaN- and Si 3 N 4 -Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.883-889

2019

Volltextzugriff (PDF)

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1853-1860

2016

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Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3115-3122

2009

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Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances

IEEE transactions on electron devices, 2013, Vol.60, p.3105-3111

2013

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Low-Frequency Noise Characterization of Strained Germanium pMOSFETs

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3132-3139

2011

Volltextzugriff (PDF)

Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs

IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.1063-1069

2009

Volltextzugriff (PDF)

Optimization of / High Electron Mobility Heterostructures for High-Power/Frequency Performances

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3105-3111

2013

Volltextzugriff (PDF)

A Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

IEEE transactions on electron devices, 2013, Vol.60 (10), p.3216-3222

2013

Volltextzugriff (PDF)

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design : GaN ELECTRONIC DEVICES

IEEE transactions on electron devices, 2013, Vol.60 (10), p.3216-3222

2013

Volltextzugriff (PDF)

Optimization of Al0.29Ga0.71N/GaN High Electron Mobility Heterostructures for High-Power/Frequency Performances : GaN ELECTRONIC DEVICES

IEEE transactions on electron devices, 2013, Vol.60 (10), p.3105-3111

2013

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Proposal and Performance Analysis of Normally Off \hbox^ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

IEEE transactions on electron devices, 2010-09, Vol.57 (9), p.2144-2154

2010

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Proposal and Performance Analysis of Normally Off [Formula Omitted] GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

IEEE transactions on electron devices, 2010-09, Vol.57 (9), p.2144

2010

Volltextzugriff (PDF)

Proposal and Performance Analysis of Normally Off n++ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN B arrier

IEEE transactions on electron devices, 2010, Vol.57 (9), p.2144-2154

2010

Volltextzugriff (PDF)

Enhancement-mode Al sub(0.66)In sub(0.34)As/Ga sub(0.67)In sub(0.33)As metamorphic HEMT: Modeling and measurements

IEEE transactions on electron devices, 2001-06, Vol.48 (6), p.1037-1044

2001

Volltextzugriff (PDF)

Enhancement-mode Al0.66InO.34As/Ga0.67In0.33As metamorphic HEMT : modeling and measurement

IEEE transactions on electron devices, 2001-06, Vol.48 (6), p.1037-1044

2001

Volltextzugriff (PDF)

Anomalies in MODFET's with a low-temperature buffer

IEEE transactions on electron devices, 1990-01, Vol.37 (1), p.46-50

1990

Volltextzugriff (PDF)

High efficiency GaInAs/InP heterojunction IMPATT diodes

IEEE transactions on electron devices, 1983-07, Vol.30 (7), p.790-796

1983

Volltextzugriff (PDF)

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Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Electrical TCAD Simulations of a Germanium pMOSFET Technology

Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique

Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p +/n Junctions

Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

High-Performance Deep Submicron Ge pMOSFETs With Halo Implants

Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates

Influence of GaN- and Si 3 N 4 -Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology

Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances

Low-Frequency Noise Characterization of Strained Germanium pMOSFETs

Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs

Optimization of / High Electron Mobility Heterostructures for High-Power/Frequency Performances

A Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design : GaN ELECTRONIC DEVICES

Optimization of Al0.29Ga0.71N/GaN High Electron Mobility Heterostructures for High-Power/Frequency Performances : GaN ELECTRONIC DEVICES

Proposal and Performance Analysis of Normally Off \hbox^ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Proposal and Performance Analysis of Normally Off [Formula Omitted] GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Proposal and Performance Analysis of Normally Off n++ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN B arrier

Enhancement-mode Al sub(0.66)In sub(0.34)As/Ga sub(0.67)In sub(0.33)As metamorphic HEMT: Modeling and measurements

Enhancement-mode Al0.66InO.34As/Ga0.67In0.33As metamorphic HEMT : modeling and measurement

Anomalies in MODFET's with a low-temperature buffer

High efficiency GaInAs/InP heterojunction IMPATT diodes

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