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Deep levels in undoped In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 grown on GaAs (100) substrates

Applied physics letters, 1995-02, Vol.66 (7), p.872-874

1995

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High stored energy of metallic glasses induced by high pressure

Applied physics letters, 2017-03, Vol.110 (11)

2017

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Polarized neutron reflectometry characterization of perpendicular magnetized Ho3Fe5O12 films with efficient spin-orbit torque induced switching

Applied physics letters, 2021-11, Vol.119 (21)

2021

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Luminescence from stacking faults in gallium nitride

Applied physics letters, 2005-01, Vol.86 (2), p.021908-021908-3

2005

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Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Applied physics letters, 2002-05, Vol.80 (19), p.3542-3544

2002

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Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

Applied physics letters, 2002-12, Vol.81 (23), p.4392-4394

2002

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Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

Applied physics letters, 2002-11, Vol.81 (22), p.4130-4132

2002

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AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

Applied physics letters, 2003-06, Vol.82 (25), p.4593-4595

2003

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AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

Applied physics letters, 2003-02, Vol.82 (8), p.1299-1301

2003

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GaN/AlGaN multiple quantum wells on a -plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

Applied physics letters, 2003-09, Vol.83 (13), p.2599-2601

2003

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Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials

Applied physics letters, 2002-05, Vol.80 (20), p.3730-3732

2002

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GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

Applied physics letters, 2002-10, Vol.81 (17), p.3194-3196

2002

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AlGaN layers grown on GaN using strain-relief interlayers

Applied physics letters, 2002-12, Vol.81 (26), p.4961-4963

2002

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Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth

Applied physics letters, 2004-08, Vol.85 (5), p.771-773

2004

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Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN

Applied physics letters, 2004-02, Vol.84 (5), p.696-698

2004

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Pressure-induced structural phase transition in CaCrO4: Evidence from Raman scattering studies

Applied physics letters, 2005-10, Vol.87 (18)

2005

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Origins of both insulator–metal transition and colossal magnetoresistance in doped manganese perovskites

Applied physics letters, 2000-12, Vol.77 (26), p.4398-4400

2000

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AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire

Applied physics letters, 2002-07, Vol.81 (4), p.604-606

2002

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Room-temperature optically pumped laser emission from a -plane GaN with high optical gain characteristics

Applied physics letters, 2004-04, Vol.84 (16), p.2998-3000

2004

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Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells

Applied physics letters, 2002-05, Vol.80 (21), p.3943-3945

2002

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Below band gap photoreflectance transitions in epitaxial GaN

Applied physics letters, 2004-09, Vol.85 (11), p.1931-1933

2004

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Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates

Applied physics letters, 1994-11, Vol.65 (19), p.2407-2409

1994

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Temperature-mediated phase selection during growth of GaN on (111)A and (1̄1̄1̄)B GaAs substrates

Applied physics letters, 1995-12, Vol.67 (25), p.3759-3761

1995

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Pressure effects on multiferroic LuFe2O4

Applied physics letters, 2010-03, Vol.96 (10)

2010

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Pressure effects on multiferroic LuFe 2 O 4

Applied physics letters, 2010-03, Vol.96 (10), p.102909-102909-3

2010

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Deep levels in undoped In0.5Ga0.5P and In0.5Ga0.5P0.99As0.01 grown on GaAs (100) substrates

High stored energy of metallic glasses induced by high pressure

Polarized neutron reflectometry characterization of perpendicular magnetized Ho3Fe5O12 films with efficient spin-orbit torque induced switching

Luminescence from stacking faults in gallium nitride

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

GaN/AlGaN multiple quantum wells on a -plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices

Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials

GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

AlGaN layers grown on GaN using strain-relief interlayers

Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth

Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN

Pressure-induced structural phase transition in CaCrO4: Evidence from Raman scattering studies

Origins of both insulator–metal transition and colossal magnetoresistance in doped manganese perovskites

AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire

Room-temperature optically pumped laser emission from a -plane GaN with high optical gain characteristics

Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells

Below band gap photoreflectance transitions in epitaxial GaN

Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates

Temperature-mediated phase selection during growth of GaN on (111)A and (1̄1̄1̄)B GaAs substrates

Pressure effects on multiferroic LuFe2O4

Pressure effects on multiferroic LuFe 2 O 4

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