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High reliability InGaP/GaAs HBT

IEEE electron device letters, 1998-04, Vol.19 (4), p.115-117

1998

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A non-boundary-fitted-grid method, based on compact integrated-RBF approximations, for solving differential problems in multiply-connected domains

Journal of computational science, 2024-07, Vol.79, p.102311, Article 102311

2024

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Phonon scattering in thin silica films below 1 K

Journal of low temperature physics, 1998-10, Vol.113 (1-2), p.123-139

1998

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Generation of Low-Energy Excitations in Silicon

Physical review letters, 1998-10, Vol.81 (15), p.3171-3174

1998

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The high-volume production of heterojunction bipolar transistors

JOM (1989), 1998-08, Vol.50 (8), p.45-47

1998

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S5114 The Quiet Menace: Unmasking Signet Ring Cell Carcinoma Through Gastric Perforation

The American journal of gastroenterology, 2024-10, Vol.119 (10S), p.S3209-S3209

2024

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Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry

Journal of applied physics, 1987-10, Vol.62 (8), p.3458-3461

1987

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Providing impetus, tools, and guidance to strengthen national capacity for antimicrobial stewardship in Viet Nam

PLoS medicine, 2013-05, Vol.10 (5), p.e1001429-e1001429

2013

Volltextzugriff (PDF)

Halogen lamp recrystallization of silicon on insulating substrates

Journal of applied physics, 1983-01, Vol.54 (1), p.437-439

1983

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Ventilator-associated respiratory infection in a resource-restricted setting: impact and etiology

Journal of intensive care, 2017-12, Vol.5 (1), p.69-69, Article 69

2017

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Determination of minority-carrier generation lifetime in beam-recrystallized silicon-on-insulator structure by using a depletion-mode transistor

Applied physics letters, 1985-11, Vol.47 (9), p.950-952

1985

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High quality silicon-on-insulator structure formed by oxygen implantation and lamp annealing

Applied physics letters, 1988-03, Vol.52 (10), p.819-821

1988

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High performance Al0.35Ga0.65As/GaAs HBT's

IEEE electron device letters, 2000-05, Vol.21 (5), p.196

2000

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A simple electrical method to determine the Si and oxide thicknesses in SOI materials

IEEE electron device letters, 1991-08, Vol.12 (8), p.427-429

1991

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A simple characterization method for silicon-on-insulator materials using a depletion-mode MOSFET

IEEE electron device letters, 1990-11, Vol.11 (11), p.552-555

1990

Volltextzugriff (PDF)

Experimental I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors with very thin bases

Electronics letters, 1996-07, Vol.32 (14), p.1323-1324

1996

Volltextzugriff (PDF)

Self-aligned Si MESFETs fabricated in thin silicon-on-insulator films

Electronics letters, 1987-03, Vol.23 (7), p.354-355

1987

Volltextzugriff (PDF)

Microanalysis of single-crystal Si recrystallized using halogen lamps

Journal of applied physics, 1983-07, Vol.54 (7), p.3892-3896

1983

Volltextzugriff (PDF)

Lightweight, low cost GaAs solar cells on 4″ epitaxial liftoff (ELO) wafers

2008 33rd IEEE Photovoltaic Specialists Conference, 2008, p.1-4

2008

Volltextzugriff (PDF)

Transient effect in thinned silicon-on-insulator devices

Electronics letters, 1986-04, Vol.22 (8), p.412-413

VU, D. P

1986

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Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures: the very thin Si film case

Applied physics letters, 1988-01, Vol.52 (1), p.45-47

1988

Volltextzugriff (PDF)

Phonon scattering and internal friction in dielectric and metallic films at low temperatures

Physical review. B, Condensed matter, 2001-03, Vol.63 (12), Article 125421

2001

Volltextzugriff (PDF)

Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures

Applied physics letters, 1986-01, Vol.48 (1), p.50-52

1986

Volltextzugriff (PDF)

Electrical performances of devices made in SOI films obtained by lamp ZMR

IEEE circuits and devices magazine, 1987-07, Vol.3 (4), p.27-31

1987

Volltextzugriff (PDF)

Fast annealing of 4 in. arsenic-implanted silicon wafers using an imaging furnace

Electronics letters, 1982-08, Vol.18 (16), p.694-695

1982

Volltextzugriff (PDF)

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High reliability InGaP/GaAs HBT

A non-boundary-fitted-grid method, based on compact integrated-RBF approximations, for solving differential problems in multiply-connected domains

Phonon scattering in thin silica films below 1 K

Generation of Low-Energy Excitations in Silicon

The high-volume production of heterojunction bipolar transistors

S5114 The Quiet Menace: Unmasking Signet Ring Cell Carcinoma Through Gastric Perforation

Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry

Providing impetus, tools, and guidance to strengthen national capacity for antimicrobial stewardship in Viet Nam

Halogen lamp recrystallization of silicon on insulating substrates

Ventilator-associated respiratory infection in a resource-restricted setting: impact and etiology

Determination of minority-carrier generation lifetime in beam-recrystallized silicon-on-insulator structure by using a depletion-mode transistor

High quality silicon-on-insulator structure formed by oxygen implantation and lamp annealing

High performance Al0.35Ga0.65As/GaAs HBT's

A simple electrical method to determine the Si and oxide thicknesses in SOI materials

A simple characterization method for silicon-on-insulator materials using a depletion-mode MOSFET

Experimental I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors with very thin bases

Self-aligned Si MESFETs fabricated in thin silicon-on-insulator films

Microanalysis of single-crystal Si recrystallized using halogen lamps

Lightweight, low cost GaAs solar cells on 4″ epitaxial liftoff (ELO) wafers

Transient effect in thinned silicon-on-insulator devices

Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures: the very thin Si film case

Phonon scattering and internal friction in dielectric and metallic films at low temperatures

Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures

Electrical performances of devices made in SOI films obtained by lamp ZMR

Fast annealing of 4 in. arsenic-implanted silicon wafers using an imaging furnace

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