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Heterojunctions and Metal Semiconductor Junctions

Milnes, A. G

1, 1972

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Rudolf Trümpy (1921–2009)

Swiss Journal of geosciences, 2009-05, Vol.102 (1), p.1-2

Milnes, A. G.

2009

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Mont Terri Rock Laboratory, 20 Years: Two Decades of Research and Experimentation on Claystones for Geological Disposal of Radioactive Waste

1st ed. 2018 edition., 2018

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Semiconductor Devices and Integrated Electronics

Milnes, A. G

1, 1980

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Metal-semiconductor-metal ultraviolet photodetectors using 6H-SiC

IEEE photonics technology letters, 1997-03, Vol.9 (3), p.363-364

1997

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Degradation and subsequent healing by electromigration in Al-1 wt % Si thin films

Journal of applied physics, 1992-09, Vol.72 (5), p.1821-1832

1992

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Evidence for EL6 (Ec―0.35 eV) acting as a dominant recombination center in n-type horizontal Bridgman GaAs

Journal of applied physics, 1987-06, Vol.61 (11), p.5047-5050

1987

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Indium arsenide: a semiconductor for high speed and electro-optical devices

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-01, Vol.18 (3), p.237-259

1993

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Diffusion limited chemical etching effects in semiconductors

Solid-state electronics, 1995, Vol.38 (1), p.17-24

1995

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Hydrogen passivation effects in InGaAlP and InGaP

Journal of applied physics, 1994-12, Vol.76 (11), p.7390-7398

1994

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Suppression of the dominant recombination center in n-type GaAs by proximity annealing of wafers

Journal of applied physics, 1990-12, Vol.68 (11), p.5588-5594

1990

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Interfacial reactions between gold thin films and GaAs substrates

Thin solid films, 1984-01, Vol.111 (2), p.149-166

1984

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Ohmic contacts of Au and Ag to p-GaSb

Solid-state electronics, 1994, Vol.37 (1), p.37-44

1994

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The Chemical Etching of GaSb in Br2 ‐ Methanol Solutions

Journal of the Electrochemical Society, 1994-11, Vol.141 (11), p.3264-3268

1994

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Au spreading on GaSb substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-09, Vol.21 (1), p.94-100

1993

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Degradation by electromigration in passivated Al-1 wt% Si thin films

Applied physics letters, 1992-07, Vol.61 (3), p.276-278

1992

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Semiconductor Devices and Integrated Electronics

Milnes, A. G

1, 2012

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Semiconductor heterojunction topics: Introduction and overview

Solid-state electronics, 1986-02, Vol.29 (2), p.99-121

Milnes, A.G.

1986

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The effect of annealing treatments on defect structure and diffusion lengths in bulk n-type GaAs

Journal of applied physics, 1989-09, Vol.66 (5), p.2002-2010

1989

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Heterojunctions and metal-semiconductor junctions

Milnes, A.G

2012

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The influence of hydrogen plasma treatment and proton implantation on the electrical properties of InAs

Journal of applied physics, 1993-03, Vol.73 (6), p.2882-2887

1993

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Hydrogen treatment effect on shallow and deep centers in GaSb

Applied physics letters, 1992-03, Vol.60 (11), p.1318-1320

1992

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Theoretical and experimental determination of deep trap profiles in semiconductors

Journal of applied physics, 1987-02, Vol.61 (3), p.1063-1067

1987

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Ohmic Contacts Formed on n‐GaSb by Electrochemical Deposition

Journal of the Electrochemical Society, 1996-03, Vol.143 (3), p.1014-1020

1996

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Gotthard-Durchstich: Editorial: “Everything will change…”

Swiss Journal of geosciences, 2010, Vol.103 (3), p.325-326

2010

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Heterojunctions and Metal Semiconductor Junctions

Rudolf Trümpy (1921–2009)

Mont Terri Rock Laboratory, 20 Years: Two Decades of Research and Experimentation on Claystones for Geological Disposal of Radioactive Waste

Semiconductor Devices and Integrated Electronics

Metal-semiconductor-metal ultraviolet photodetectors using 6H-SiC

Degradation and subsequent healing by electromigration in Al-1 wt % Si thin films

Evidence for EL6 (Ec―0.35 eV) acting as a dominant recombination center in n-type horizontal Bridgman GaAs

Indium arsenide: a semiconductor for high speed and electro-optical devices

Diffusion limited chemical etching effects in semiconductors

Hydrogen passivation effects in InGaAlP and InGaP

Suppression of the dominant recombination center in n-type GaAs by proximity annealing of wafers

Interfacial reactions between gold thin films and GaAs substrates

Ohmic contacts of Au and Ag to p-GaSb

The Chemical Etching of GaSb in Br2 ‐ Methanol Solutions

Au spreading on GaSb substrates

Degradation by electromigration in passivated Al-1 wt% Si thin films

Semiconductor Devices and Integrated Electronics

Semiconductor heterojunction topics: Introduction and overview

The effect of annealing treatments on defect structure and diffusion lengths in bulk n-type GaAs

Heterojunctions and metal-semiconductor junctions

The influence of hydrogen plasma treatment and proton implantation on the electrical properties of InAs

Hydrogen treatment effect on shallow and deep centers in GaSb

Theoretical and experimental determination of deep trap profiles in semiconductors

Ohmic Contacts Formed on n‐GaSb by Electrochemical Deposition

Gotthard-Durchstich: Editorial: “Everything will change…”

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