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The C49 to C54 Phase Transformation in TiSi2 Thin Films

Journal of the Electrochemical Society, 1994-05, Vol.141 (5), p.1347-1350

1994

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Nucleation-limited phase selection during reactions in nickel/amorphous-silicon multilayer thin films

Journal of applied physics, 1990-02, Vol.67 (3), p.1325-1333

1990

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Electromigration in AlCu lines: comparison of Dual Damascene and metal reactive ion etching

Thin solid films, 2001-06, Vol.388 (1), p.303-314

2001

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Temperature dependence of the Al-fill processes for submicron-via structures

Thin solid films, 1998-05, Vol.320 (1), p.63-66

1998

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Experimental evidence for nucleation during thin-film reactions

Applied physics letters, 1989-08, Vol.55 (9), p.852-854

1989

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Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer

Journal of materials research, 1997-02, Vol.12 (2), p.304-307

1997

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Crystallographic texture of C54 titanium disilicide as a function of deep submicron structure geometry

Journal of electronic materials, 1997-09, Vol.26 (9), p.1090-1095

1997

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Role of stress relief in the hexagonal-close-packed to face-centered-cubic phase transformation in cobalt thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1993, Vol.11 (4), p.1435-1440

1993

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Quantitative investigation of titanium/amorphous-silicon multilayer thin film reactions

Journal of materials research, 1990-03, Vol.5 (3), p.593-600

1990

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Nucleation of an intermetallic at thin-film interfaces: VSi2 contrasted with Al3Ni

Journal of materials research, 1992-06, Vol.7 (6), p.1350-1355

1992

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Electrical Resistance and Stress of Bilayer Co(P)/Cu and Ni(P)/Cu Thin Films

Journal of the Electrochemical Society, 1993-09, Vol.140 (9), p.2690-2694

1993

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Relaxation phenomena in evaporated amorphous silicon films

Journal of materials research, 1989-10, Vol.4 (5), p.1057-1059

1989

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Formation of a crystalline metal-rich silicide in thin film titanium/silicon reactions

Thin solid films, 1996-01, Vol.289 (1), p.220-226

1996

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Nucleation controlled phase selection in vanadium/amorphous-silicon multilayer thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1990-05, Vol.8 (3), p.1566-1571

1990

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Compressive Stress Increase With Repeated Thermal Cycling in Tantalum(Oxygen) Thin Films

MRS proceedings, 1993, Vol.308, Article 57

1993

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In-Situ Resistance Measurements During Rapid Thermal Annealing for Process Characterization

MRS proceedings, 1995, Vol.389, Article 321

1995

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Phase Transformation Kinetics of TiSi2

MRS proceedings, 1993, Vol.311

1993

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In-Situ resistance Measurements During Rapid Thermal Annealing for Process Characterization

MRS proceedings, 1995, Vol.387, Article 49

1995

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Dependence of Crystallographic Texture of C54 Tisi2 on Thickness and Linewidth In Submicron Cmos Structures

MRS proceedings, 1996, Vol.427

1996

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Composition Dependence of Crystallization of Co-Si Alloys

MRS proceedings, 1992, Vol.260, Article 175

1992

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Phase Formation in Cu(Sn) Alloy Thin Films

MRS proceedings, 1996, Vol.427, Article 133

1996

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Kinetics of Intermetallic Formation in Free Standing Cu/Mg Multilayer Thin Films

MRS proceedings, 1992, Vol.260, Article 947

1992

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Kinetics and Thermodynamics of Amorphous Silicide Formation in Metal/Amorphous-Silicon Multilayer Thin Films

MRS proceedings, 1990, Vol.187, Article 61

1990

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Silicide Formation in Ti-Si and Co-Si REACTIONS

MRS proceedings, 1993, Vol.311, Article 253

1993

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Repeated compressive stress increase with 400 °C thermal cycling in tantalum thin films due to increases in the oxygen content

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1994-07, Vol.12 (4), p.2818-2821

1994

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The C49 to C54 Phase Transformation in TiSi2 Thin Films

Nucleation-limited phase selection during reactions in nickel/amorphous-silicon multilayer thin films

Electromigration in AlCu lines: comparison of Dual Damascene and metal reactive ion etching

Temperature dependence of the Al-fill processes for submicron-via structures

Experimental evidence for nucleation during thin-film reactions

Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer

Crystallographic texture of C54 titanium disilicide as a function of deep submicron structure geometry

Role of stress relief in the hexagonal-close-packed to face-centered-cubic phase transformation in cobalt thin films

Quantitative investigation of titanium/amorphous-silicon multilayer thin film reactions

Nucleation of an intermetallic at thin-film interfaces: VSi2 contrasted with Al3Ni

Electrical Resistance and Stress of Bilayer Co(P)/Cu and Ni(P)/Cu Thin Films

Relaxation phenomena in evaporated amorphous silicon films

Formation of a crystalline metal-rich silicide in thin film titanium/silicon reactions

Nucleation controlled phase selection in vanadium/amorphous-silicon multilayer thin films

Compressive Stress Increase With Repeated Thermal Cycling in Tantalum(Oxygen) Thin Films

In-Situ Resistance Measurements During Rapid Thermal Annealing for Process Characterization

Phase Transformation Kinetics of TiSi2

In-Situ resistance Measurements During Rapid Thermal Annealing for Process Characterization

Dependence of Crystallographic Texture of C54 Tisi2 on Thickness and Linewidth In Submicron Cmos Structures

Composition Dependence of Crystallization of Co-Si Alloys

Phase Formation in Cu(Sn) Alloy Thin Films

Kinetics of Intermetallic Formation in Free Standing Cu/Mg Multilayer Thin Films

Kinetics and Thermodynamics of Amorphous Silicide Formation in Metal/Amorphous-Silicon Multilayer Thin Films

Silicide Formation in Ti-Si and Co-Si REACTIONS

Repeated compressive stress increase with 400 °C thermal cycling in tantalum thin films due to increases in the oxygen content

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