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Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template

Journal of crystal growth, 2013-10, Vol.381, p.37-42

2013

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Crystal growth and characterization of ytterbium garnet and holmium garnet using the Fz technique

Journal of crystal growth, 2009-01, Vol.311 (3), p.522-525

2009

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Microscopic strain analysis of semiconductor crystals using a synchrotron X-ray microbeam

Journal of crystal growth, 2002-04, Vol.237, p.317-323

2002

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Structural properties of GaN grown on LiGaO2 by PLD

Journal of crystal growth, 2003-11, Vol.259 (1-2), p.36-39

2003

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G-GIXD characterization of GaN grown by laser MBE

Journal of crystal growth, 2002-04, Vol.237, p.1158-1162

2002

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Stoichiometric LiNbO3 single crystal growth by double crucible Czochralski method using automatic powder supply system

Journal of crystal growth, 1992-02, Vol.116 (3-4), p.327-332

1992

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Dislocation-free large area InP ELO layers by liquid phase epitaxy

Journal of crystal growth, 2005-08, Vol.281 (2), p.263-274

2005

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Multi-step pulling of GaInSb bulk crystal from ternary solution

Journal of crystal growth, 2000-02, Vol.209 (4), p.625-629

2000

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Characterization of strain distribution in quantum dots by X-ray diffraction

Journal of crystal growth, 2002, Vol.234 (1), p.197-201

2002

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X-ray perfection study of Verneuil-grown SrTiO3 crystals

Journal of crystal growth, 1998-07, Vol.191 (3), p.483-491

1998

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Improvement of cubic GaN film crystal quality by use of an AlN/GaN ordered alloy on GaAs (1 0 0) by plasma assisted molecular beam epitaxy

Journal of crystal growth, 2003-04, Vol.251 (1), p.455-459

2003

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Self-assembling CdTe quantum dots on ZnSe by alternate supplying and molecular beam epitaxial method

Journal of crystal growth, 2000-06, Vol.214, p.694-697

2000

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Excess ion density at the GaP/GaP liquid-phase epitaxial regrowth interface

Journal of crystal growth, 2000-02, Vol.209 (4), p.666-674

2000

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Analysis of minute strain fields around A-swirl defects in a float zone silicon crystal by means of plane wave X-ray topography using extremely collimated X-rays

Journal of crystal growth, 1992, Vol.116 (1), p.22-26

1992

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Layer growth in GaAs epitaxy

Journal of crystal growth, 1986-02, Vol.74 (2), p.331-337

1986

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Sc2O3-doped LiNbO3 grown by the float zone method

Journal of crystal growth, 1992-07, Vol.121 (3), p.522-526

1992

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Growth and characterization of Sc2O3-doped LiNbO3

Journal of crystal growth, 1993-03, Vol.128 (1-4), p.920-923

1993

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Heteroepitaxy of GaP-AlxGa1-xP system by the temperature difference method under controlled vapor pressure (TDM-CVP)

Journal of crystal growth, 1990, Vol.99 (1-4), p.297-301

1990

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InGaAsP/InP heterojunction bipolar transistor grown by MOVPE

Journal of crystal growth, 1988, Vol.93 (1-4), p.924-928

1988

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Magnetic field effects on float-zone Si crystal growth

Journal of crystal growth, 1983-01, Vol.62 (3), p.523-531

1983

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Optical properties of growth induced anisotropy in LPE garnet and its grown condition dependence

Journal of crystal growth, 1986-02, Vol.74 (2), p.453-461

1986

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Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template

Crystal growth and characterization of ytterbium garnet and holmium garnet using the Fz technique

Microscopic strain analysis of semiconductor crystals using a synchrotron X-ray microbeam

Structural properties of GaN grown on LiGaO2 by PLD

G-GIXD characterization of GaN grown by laser MBE

Stoichiometric LiNbO3 single crystal growth by double crucible Czochralski method using automatic powder supply system

Dislocation-free large area InP ELO layers by liquid phase epitaxy

Multi-step pulling of GaInSb bulk crystal from ternary solution

Characterization of strain distribution in quantum dots by X-ray diffraction

X-ray perfection study of Verneuil-grown SrTiO3 crystals

Improvement of cubic GaN film crystal quality by use of an AlN/GaN ordered alloy on GaAs (1 0 0) by plasma assisted molecular beam epitaxy

Self-assembling CdTe quantum dots on ZnSe by alternate supplying and molecular beam epitaxial method

Excess ion density at the GaP/GaP liquid-phase epitaxial regrowth interface

Analysis of minute strain fields around A-swirl defects in a float zone silicon crystal by means of plane wave X-ray topography using extremely collimated X-rays

Layer growth in GaAs epitaxy

Sc2O3-doped LiNbO3 grown by the float zone method

Growth and characterization of Sc2O3-doped LiNbO3

Heteroepitaxy of GaP-AlxGa1-xP system by the temperature difference method under controlled vapor pressure (TDM-CVP)

InGaAsP/InP heterojunction bipolar transistor grown by MOVPE

Magnetic field effects on float-zone Si crystal growth

Optical properties of growth induced anisotropy in LPE garnet and its grown condition dependence

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