UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Applied physics letters, 2022-02, Vol.120 (8)

2022

Volltextzugriff (PDF)

Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications

2014 IEEE International Reliability Physics Symposium, 2014, p.6C.5.1-6C.5.4

2014

Volltextzugriff (PDF)

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Applied physics letters, 2009-07, Vol.95 (3), p.033510-033510-3

2009

Volltextzugriff (PDF)

Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors

2011 International Reliability Physics Symposium, 2011, p.4E.3.1-4E.3.4

2011

Volltextzugriff (PDF)

Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

ECS transactions, 2023-09, Vol.112 (2), p.9-20

2023

Volltextzugriff (PDF)

A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees

2014 Integrated Communications, Navigation and Surveillance Conference (ICNS) Conference Proceedings, 2014, p.U1-1-U1-12

2014

Volltextzugriff (PDF)

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23)

2010

Volltextzugriff (PDF)

Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-7

2024

Volltextzugriff (PDF)

Electromigration in strapped metal layers with large dimensions for lateral power device applications

2014 IEEE International Reliability Physics Symposium, 2014, p.2A.4.1-2A.4.4

2014

Volltextzugriff (PDF)

Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3132-3138

2017

Volltextzugriff (PDF)

Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.890-895

2019

Volltextzugriff (PDF)

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.P21-1-P21-6

2022

Volltextzugriff (PDF)

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2012-04, Vol.100 (17), p.172109-172109-3

2012

Volltextzugriff (PDF)

Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

2006 International Electron Devices Meeting, 2006, p.1-4

2006

Volltextzugriff (PDF)

Strapped Cu interconnect for enhancing electromigration limit for power device application

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.368-371

2020

Volltextzugriff (PDF)

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-5

2019

Volltextzugriff (PDF)

Current Crowding Impact on Electromigration in Al Interconnects

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-6

2019

Volltextzugriff (PDF)

Application reliability validation of GaN power devices

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.20.5.1-20.5.4

2016

Volltextzugriff (PDF)

Electromigration current limit relaxation for power device interconnects

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.68-71

2018

Volltextzugriff (PDF)

Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

Volltextzugriff (PDF)

Impact of self-heating effect in hot carrier injection modeling

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.315-318

2018

Volltextzugriff (PDF)

Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors

2007 IEEE International Electron Devices Meeting, 2007, p.385-388

2007

Volltextzugriff (PDF)

Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23), p.233509-233509-3

2010

Volltextzugriff (PDF)

RF power degradation of GaN High Electron Mobility Transistors

2010 International Electron Devices Meeting, 2010, p.20.2.1-20.2.4

2010

Volltextzugriff (PDF)

Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

Meeting abstracts (Electrochemical Society), 2023-12, Vol.MA2023-02 (32), p.1575-1575

2023

Volltextzugriff (PDF)

1 – 25 von 38

Suche als RSS-Feed

Aktive Filter

ThemaExact Sciences And Technology

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(14)
Mit Volltextzugriff
(31)

Publikationsform

Sprache

Englisch
(37)

Erscheinungsjahr

n.n

Thema

Science & Technology
(24)
Technology
(20)
Engineering
(17)
Engineering, Electrical & Electronic
(16)
Stress
(13)
Gallium Nitride
(12)
Hemts
(11)
Physical Sciences
(11)
Physics
(10)
Physics, Applied
(10)
Degradation
(8)
Modfets
(8)
Logic Gates
(7)
Reliability
(7)
Aluminum Gallium Nitride
(5)
Electromigration
(4)
Gan
(4)
Switches
(4)
Voltage
(4)
Current Density
(3)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors

Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)

Electromigration in strapped metal layers with large dimensions for lateral power device applications

Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

Strapped Cu interconnect for enhancing electromigration limit for power device application

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

Current Crowding Impact on Electromigration in Al Interconnects

Application reliability validation of GaN power devices

Electromigration current limit relaxation for power device interconnects

Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

Impact of self-heating effect in hot carrier injection modeling

Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors

Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

RF power degradation of GaN High Electron Mobility Transistors

Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

Aktive Filter

Suchergebnisse filtern