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Ultrahigh vacuum Raman spectroscopy for the preparation of III–V semiconductor surfaces

Review of scientific instruments, 2023-12, Vol.94 (12)

2023

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Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral response

Applied physics letters, 2022-01, Vol.120 (5)

2022

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Mid-wave infrared sensitized InGaAs using intraband transition in doped colloidal II–VI nanocrystals

The Journal of chemical physics, 2023-03, Vol.158 (9), p.094702-094702

2023

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Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy

Applied physics letters, 2022-11, Vol.121 (19)

2022

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Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts

Nano research, 2020, Vol.13 (1), p.61-66

2020

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Terahertz detection in zero-bias InAs self-switching diodes at room temperature

Applied physics letters, 2013-09, Vol.103 (13), p.133504-1-4

2013

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Vertical and lateral manipulation of single Cs atoms on the semiconductor InAs(111)A

SciPost physics, 2024-04, Vol.16 (4), p.096, Article 096

2024

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V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I }=\text \,\,\mu A. \mu m ^} at V }= \text V

IEEE journal of the Electron Devices Society, 2017-01, Vol.5 (1), p.53-58

2017

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100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

TheScientificWorld, 2014-01, Vol.2014 (2014), p.1-6

2014

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Engineering a Robust Flat Band in III-V Semiconductor Heterostructures

Nano letters, 2021-01, Vol.21 (1), p.680-685

2021

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InGaAs quantum dot chains grown by twofold selective area molecular beam epitaxy

Nanotechnology, 2024-07, Vol.35 (39), p.395302

2024

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Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping

Nanotechnology, 2017-06, Vol.28 (22), p.225601

2017

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Compliance at the GaSb/GaP Interface by Misfit Dislocations Array

Advanced materials research, 2011-01, Vol.324, p.85-88

2011

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Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy

Nanotechnology, 2019-01, Vol.30 (3), p.035301-035301

2019

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Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP

physica status solidi (b), 2016-10, Vol.253 (10), p.1877-1881

2016

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Hole localization energy of 1.18eV in GaSb quantum dots embedded in GaP

Physica Status Solidi. B: Basic Solid State Physics, 2016-10, Vol.253 (10), p.1877-1881

2016

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On the origins of transport inefficiencies in mesoscopic networks

Scientific reports, 2018-02, Vol.8 (1), p.3017-11, Article 3017

2018

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Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP (Phys. Status Solidi B 10/2016)

physica status solidi (b), 2016-10, Vol.253 (10), p.1869-1869

2016

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Antimony-Mediated Control of Misfit Dislocations and Strain at the Highly Lattice Mismatched GaSb/GaAs Interface

ACS applied materials & interfaces, 2013-10, Vol.5 (19), p.9760-9764

2013

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Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-03, Vol.33 (2), p.021207

2015

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Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

Semiconductor science and technology, 2014-03, Vol.29 (3), p.35010

2014

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Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces

Europhysics letters, 2012-03, Vol.97 (6), p.68011-1-6

2012

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Ultra thin body InAs MOSFET with raised InAs n+ S/D by selective MBE

2017 75th Annual Device Research Conference (DRC), 2017, p.1-2

2017

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Gate-Recess Technology for InAs/AlSb HEMTs

IEEE transactions on electron devices, 2009, Vol.56 (9), p.1904-1911

2009

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Influence of Doping and Tunneling Interface Stoichiometry on n+In 0.5 Ga 0.5 As/p+GaAs 0.5 Sb 0.5 Esaki Diode Behavior

ECS transactions, 2016-04, Vol.72 (3), p.73-80

2016

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Ultrahigh vacuum Raman spectroscopy for the preparation of III–V semiconductor surfaces

Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral response

Mid-wave infrared sensitized InGaAs using intraband transition in doped colloidal II–VI nanocrystals

Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy

Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

Vertical and lateral manipulation of single Cs atoms on the semiconductor InAs(111)A

V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I }=\text \,\,\mu A. \mu m ^} at V }= \text V

100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

Engineering a Robust Flat Band in III-V Semiconductor Heterostructures

InGaAs quantum dot chains grown by twofold selective area molecular beam epitaxy

Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping

Compliance at the GaSb/GaP Interface by Misfit Dislocations Array

Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy

Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP

Hole localization energy of 1.18eV in GaSb quantum dots embedded in GaP

On the origins of transport inefficiencies in mesoscopic networks

Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP (Phys. Status Solidi B 10/2016)

Antimony-Mediated Control of Misfit Dislocations and Strain at the Highly Lattice Mismatched GaSb/GaAs Interface

Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces

Ultra thin body InAs MOSFET with raised InAs n+ S/D by selective MBE

Gate-Recess Technology for InAs/AlSb HEMTs

Influence of Doping and Tunneling Interface Stoichiometry on n+In 0.5 Ga 0.5 As/p+GaAs 0.5 Sb 0.5 Esaki Diode Behavior

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