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Metalorganic vapor phase epitaxy of GaN on 2 inch ScAlMgO4 (0001) substrates

Japanese Journal of Applied Physics, 2022-09, Vol.61 (9), p.090904

2022

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Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth

Japanese Journal of Applied Physics, 2021-11, Vol.60 (11), p.115501

2021

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Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

Japanese Journal of Applied Physics, 2022-05, Vol.61 (SC), p.SC1034

2022

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Suppression of threshold voltage shift due to positive bias stress in GaN planar MOSFETs by post-deposition annealing

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

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Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, 2022-04, Vol.61 (4), p.048002

2022

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Effects of Cl passivation on Al2O3/GaN interface properties

Japanese Journal of Applied Physics, 2023-01, Vol.62 (SA), p.SA1002

2023

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Impact of high-temperature implantation of Mg ions into GaN

Japanese Journal of Applied Physics, 2020-05, Vol.59 (5), p.56502

2020

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Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

Japanese Journal of Applied Physics, 2007-03, Vol.46 (3L), p.L190

2007

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Design strategy and working principle of GaN vertical trench gate MOSFETs with p-type shielding rings

Japanese Journal of Applied Physics, 2024-04, Vol.63 (4), p.044001

2024

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Estimation of uniformity in Schottky contacts between printed Ni electrode and n-GaN by scanning internal photoemission microscopy

Japanese Journal of Applied Physics, 2022-08, Vol.61 (8), p.86506

2022

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Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBD03

2021

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An ab initio-based approach for the formation of pyramidal inversion domain boundaries in highly Mg-doped GaN

Japanese Journal of Applied Physics, 2022-05, Vol.61 (5), p.55503

2022

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Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.25503

2024

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GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Japanese Journal of Applied Physics, 2022-11, Vol.61 (11), p.118003

2022

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Evaluation of electrical properties in anodized n-GaN grown on sapphire substrates at different anodization voltages

Japanese Journal of Applied Physics, 2023-11, Vol.62 (11), p.110907

2023

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Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation

Japanese Journal of Applied Physics, 2023-11, Vol.62 (SN), p.SN0801

2023

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Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBD12

2021

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Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers

Japanese Journal of Applied Physics, 2023-07, Vol.62 (7), p.072003

2023

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Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes

Japanese Journal of Applied Physics, 2021-05, Vol.60 (5), p.56503

2021

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Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by AlxGa1−xN back barrier

Japanese Journal of Applied Physics, 2020-04, Vol.59 (4)

2020

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High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes

Japanese Journal of Applied Physics, 2007-02, Vol.46 (2L), p.L126

2007

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Relationship of carbon concentration and slow decays of photoluminescence in homoepitaxial n-type GaN layers

Japanese Journal of Applied Physics, 2022-07, Vol.61 (7), p.78004

2022

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Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors

Japanese Journal of Applied Physics, 2023-01, Vol.62 (SA), p.SA1004

2023

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High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics, 2001-06, Vol.40 (6B), p.L583-L585

2001

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Stoichiometric imbalances in Mg-implanted GaN

Japanese Journal of Applied Physics, 2021-06, Vol.60 (6), p.66504

2021

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Metalorganic vapor phase epitaxy of GaN on 2 inch ScAlMgO4 (0001) substrates

Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth

Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

Suppression of threshold voltage shift due to positive bias stress in GaN planar MOSFETs by post-deposition annealing

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Effects of Cl passivation on Al2O3/GaN interface properties

Impact of high-temperature implantation of Mg ions into GaN

Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

Design strategy and working principle of GaN vertical trench gate MOSFETs with p-type shielding rings

Estimation of uniformity in Schottky contacts between printed Ni electrode and n-GaN by scanning internal photoemission microscopy

Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

An ab initio-based approach for the formation of pyramidal inversion domain boundaries in highly Mg-doped GaN

Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Evaluation of electrical properties in anodized n-GaN grown on sapphire substrates at different anodization voltages

Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation

Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers

Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes

Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by AlxGa1−xN back barrier

High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes

Relationship of carbon concentration and slow decays of photoluminescence in homoepitaxial n-type GaN layers

Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Stoichiometric imbalances in Mg-implanted GaN

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