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Recent progress of GaN power devices for automotive applications

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100210-1-100210-10

Kachi, Tetsu

2014

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InP/InGaAs Fermi-level managed barrier diode for broadband and low-noise terahertz-wave detection

Japanese Journal of Applied Physics, 2017-01, Vol.56 (1), p.14101-014101

2017

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Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100211-1-100211-8

2014

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5.0 kV breakdown-voltage vertical GaN p-n junction diodes

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

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Performance improvement in reservoir computing by using HfZrO2 FeFETs through operating voltage optimization

Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.03SP19

2024

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Improvement of cell transistors in high-k/metal-gate peripheral transistors technology for high-performance graphic memories

Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.03SP43

2024

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Enhancing responsivity and detection limit in tunable nano-electromechanical system resonator mass sensors

Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.03SP74

2024

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Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films

Japanese Journal of Applied Physics, 2022-08, Vol.61 (SJ), p.SJ1005

2022

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4.9 kV breakdown voltage vertical GaN p-n junction diodes with high avalanche capability

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD03

2019

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1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material

Japanese Journal of Applied Physics, 2017-02, Vol.56 (2), p.26501-026501

2017

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High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p--n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

Japanese Journal of Applied Physics, 2013-02, Vol.52 (2), p.028007-028007-3

2013

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Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices

Japanese Journal of Applied Physics, 2019-01, Vol.58 (1), p.18002

Kimoto, Tsunenobu

2019

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Impact ionization coefficients of 4H-SiC in a wide temperature range

Japanese Journal of Applied Physics, 2019-01, Vol.58 (1), p.18001

2019

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Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications

Japanese Journal of Applied Physics, 2014-05, Vol.53 (5S1), p.5-1-05FP06-4

2014

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Evaluation of higher order magnetic anisotropy in a perpendicularly magnetized epitaxial ultrathin Fe layer and its applied voltage dependence

Japanese Journal of Applied Physics, 2019-09, Vol.58 (9), p.90905

2019

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Relationship between liquid crystal layer thickness and variable-focusing characteristics of an ultrasound liquid crystal lens

Japanese Journal of Applied Physics, 2022-07, Vol.61 (SG), p.SG1013

2022

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Enhanced electric property of relaxor ferroelectric crystals with low AC voltage high-temperature poling

Japanese Journal of Applied Physics, 2020-11, Vol.59 (SP), p.SPPD08

2020

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Volume difference in microdroplets in vertical contact control under electrowetting-induced asymmetric boundary condition

Japanese Journal of Applied Physics, 2023-01, Vol.62 (1), p.17003

2023

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Review of Emerging New Solid-State Non-Volatile Memories

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.040001-040001-11

Fujisaki, Yoshihisa

2013

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Random telegraph noise characteristic of nonvolatile resistive random access memories based on optical interference principle

Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.031003

2024

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Characterization of larger-single-Lorentzian noise deviated from 1/f characteristics detected by power-spectral-density-integration method

Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.03SP82

2024

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Accumulation of photoinduced carriers at the SiO2/Si interface observed through graphene transport

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.02SP65

2024

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A simulation study of vertical Ga2O3 Schottky barrier diodes using field plate termination

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.02SP66

2024

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Effect of the thicknesses of asymmetric TiO2/polydimethylsiloxane films on the triboelectric output power

Japanese Journal of Applied Physics, 2024-01, Vol.63 (1), p.01SP01

2024

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GaAs MOSFETs with in situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation

Japanese Journal of Applied Physics, 2023-12, Vol.62 (12), p.121002

2023

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Recent progress of GaN power devices for automotive applications

InP/InGaAs Fermi-level managed barrier diode for broadband and low-noise terahertz-wave detection

Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

5.0 kV breakdown-voltage vertical GaN p-n junction diodes

Performance improvement in reservoir computing by using HfZrO2 FeFETs through operating voltage optimization

Improvement of cell transistors in high-k/metal-gate peripheral transistors technology for high-performance graphic memories

Enhancing responsivity and detection limit in tunable nano-electromechanical system resonator mass sensors

Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films

4.9 kV breakdown voltage vertical GaN p-n junction diodes with high avalanche capability

1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material

High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p--n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices

Impact ionization coefficients of 4H-SiC in a wide temperature range

Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications

Evaluation of higher order magnetic anisotropy in a perpendicularly magnetized epitaxial ultrathin Fe layer and its applied voltage dependence

Relationship between liquid crystal layer thickness and variable-focusing characteristics of an ultrasound liquid crystal lens

Enhanced electric property of relaxor ferroelectric crystals with low AC voltage high-temperature poling

Volume difference in microdroplets in vertical contact control under electrowetting-induced asymmetric boundary condition

Review of Emerging New Solid-State Non-Volatile Memories

Random telegraph noise characteristic of nonvolatile resistive random access memories based on optical interference principle

Characterization of larger-single-Lorentzian noise deviated from 1/f characteristics detected by power-spectral-density-integration method

Accumulation of photoinduced carriers at the SiO2/Si interface observed through graphene transport

A simulation study of vertical Ga2O3 Schottky barrier diodes using field plate termination

Effect of the thicknesses of asymmetric TiO2/polydimethylsiloxane films on the triboelectric output power

GaAs MOSFETs with in situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation

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