UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 27.494

Sortiert nach

Evidence-based data mining method to reveal similarities between materials based on physical mechanisms

Journal of applied physics, 2023-02, Vol.133 (5)

2023

Link zum Volltext

Verfügbarkeit prüfen

High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

Link zum Volltext

Verfügbarkeit prüfen

Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy

Japanese Journal of Applied Physics, 2015-11, Vol.54 (11)

2015

Link zum Volltext

Verfügbarkeit prüfen

Germanium CMOS potential from material and process perspectives: Be more positive about germanium

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1), p.10101

2018

Link zum Volltext

Verfügbarkeit prüfen

Review on ferroelectric/polar metals

Japanese Journal of Applied Physics, 2020-06, Vol.59 (SI), p.SI0802

2020

Link zum Volltext

Verfügbarkeit prüfen

Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

Link zum Volltext

Verfügbarkeit prüfen

Physical reservoir computing-an introductory perspective

Japanese Journal of Applied Physics, 2020-06, Vol.59 (6), p.60501

Nakajima, Kohei

2020

Link zum Volltext

Verfügbarkeit prüfen

A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

Japanese Journal of Applied Physics, 2018-02, Vol.57 (2S2)

2018

Link zum Volltext

Verfügbarkeit prüfen

Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

Link zum Volltext

Verfügbarkeit prüfen

Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6)

2018

Link zum Volltext

Verfügbarkeit prüfen

Dielectric and piezoelectric properties of Pb[(Mg 1/3 Nb 2/3 ) 0.52 (Yb 1/2 Nb 1/2 ) 0.15 Ti 0.33 ]O 3 single-crystal rectangular plate and beam mode transducers poled by alternate current poling

Japanese Journal of Applied Physics, 2019-11, Vol.58 (SL), p.SLLD06

2019

Link zum Volltext

Verfügbarkeit prüfen

Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

Link zum Volltext

Verfügbarkeit prüfen

Emergent inductor by spiral magnets

Japanese Journal of Applied Physics, 2019-12, Vol.58 (12), p.120909

Nagaosa, Naoto

2019

Link zum Volltext

Verfügbarkeit prüfen

Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects

Japanese Journal of Applied Physics, 2017-08, Vol.56 (8)

2017

Link zum Volltext

Verfügbarkeit prüfen

Scintillation properties of RE2Hf2O7 (RE = La, Gd, Lu) single crystals prepared by xenon arc floating zone furnace

Japanese Journal of Applied Physics, 2018-10, Vol.57 (10)

2018

Link zum Volltext

Verfügbarkeit prüfen

Exploring the possibility of semiconducting BaSi2 for thin-film solar cell applications

Japanese Journal of Applied Physics, 2015-07, Vol.54 (7S2)

Suemasu, Takashi

2015

Link zum Volltext

Verfügbarkeit prüfen

Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

Link zum Volltext

Verfügbarkeit prüfen

Origins of etch pits in β-Ga2O3(010) single crystals

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

Link zum Volltext

Verfügbarkeit prüfen

High-coupling leaky surface acoustic waves on LiNbO3 or LiTaO3 thin plate bonded to high-velocity substrate

Japanese Journal of Applied Physics, 2017-07, Vol.56 (7S1)

2017

Link zum Volltext

Verfügbarkeit prüfen

Preparation of fine single crystals of magnetic superconductor RuSr2GdCu2O8−δ by partial melting

Japanese Journal of Applied Physics, 2018-03, Vol.57 (3)

2018

Link zum Volltext

Verfügbarkeit prüfen

Defect characterization of β-Ga2O3 single crystals grown by vertical Bridgman method

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

Link zum Volltext

Verfügbarkeit prüfen

Quenching effects on piezoelectric properties and depolarization temperatures of (Bi0.5Na0.5)TiO3-based solid solution systems

Japanese Journal of Applied Physics, 2017-10, Vol.56 (10S)

2017

Link zum Volltext

Verfügbarkeit prüfen

Wide-bandgap semiconductor materials: For their full bloom

Japanese Journal of Applied Physics, 2015-03, Vol.54 (3), p.30101-1-030101-12

Fujita, Shizuo

2015

Link zum Volltext

Verfügbarkeit prüfen

III-V/Ge channel MOS device technologies in nano CMOS era

Japanese Journal of Applied Physics, 2015-06, Vol.54 (6S1), p.6

2015

Link zum Volltext

Verfügbarkeit prüfen

Thermal phonon engineering by tailored nanostructures

Japanese Journal of Applied Physics, 2018-08, Vol.57 (8), p.80101

2018

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 27.494

Suche als RSS-Feed

Aktive Filter

ThemaExact Sciences And Technology

ThemaGeneral Engineering

Zeitschrift / SerieJapanese Journal Of Applied Physics

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(27.494)
Mit Volltextzugriff
(27.494)

Publikationsform

Artikel
(27.494)

Sprache

Englisch
(27.494)
Japanisch
(11.027)
Russisch
(6)

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

3 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

4 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(160)
... seit 30 Tagen
(31)

Menü

Weitere Dienste

Einstellungen

Evidence-based data mining method to reveal similarities between materials based on physical mechanisms

High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth

Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy

Germanium CMOS potential from material and process perspectives: Be more positive about germanium

Review on ferroelectric/polar metals

Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process

Physical reservoir computing-an introductory perspective

A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates

Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

Dielectric and piezoelectric properties of Pb[(Mg 1/3 Nb 2/3 ) 0.52 (Yb 1/2 Nb 1/2 ) 0.15 Ti 0.33 ]O 3 single-crystal rectangular plate and beam mode transducers poled by alternate current poling

Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

Emergent inductor by spiral magnets

Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects

Scintillation properties of RE2Hf2O7 (RE = La, Gd, Lu) single crystals prepared by xenon arc floating zone furnace

Exploring the possibility of semiconducting BaSi2 for thin-film solar cell applications

Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes

Origins of etch pits in β-Ga2O3(010) single crystals

High-coupling leaky surface acoustic waves on LiNbO3 or LiTaO3 thin plate bonded to high-velocity substrate

Preparation of fine single crystals of magnetic superconductor RuSr2GdCu2O8−δ by partial melting

Defect characterization of β-Ga2O3 single crystals grown by vertical Bridgman method

Quenching effects on piezoelectric properties and depolarization temperatures of (Bi0.5Na0.5)TiO3-based solid solution systems

Wide-bandgap semiconductor materials: For their full bloom

III-V/Ge channel MOS device technologies in nano CMOS era

Thermal phonon engineering by tailored nanostructures

Aktive Filter

Suchergebnisse filtern