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Formation of Surface Impurities on Lithium–Nickel–Manganese–Cobalt Oxides in the Presence of CO2 and H2O

Journal of the American Chemical Society, 2021-07, Vol.143 (27), p.10261-10274

2021

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Tetrakis(dimethylamido)hafnium Adsorption and Reaction on Hydrogen Terminated Si(100) Surfaces

Journal of physical chemistry. C, 2010-08, Vol.114 (33), p.14061-14075

2010

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Comparison of hafnium silicate thin films on silicon (1 0 0) deposited using thermal and plasma enhanced metal organic chemical vapor deposition

Thin solid films, 2002-11, Vol.419 (1), p.1-4

2002

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Atomic layer deposition of HfO2: Growth initiation study on metallic underlayers

Thin solid films, 2010-05, Vol.518 (15), p.4081-4086

2010

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Tetrakis(ethylmethylamido) Hafnium Adsorption and Reaction on Hydrogen-Terminated Si(100) Surfaces

Journal of physical chemistry. C, 2011-09, Vol.115 (38), p.18560-18571

2011

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Undulating topography of HfO2 thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

AIChE journal, 2011-11, Vol.57 (11), p.2989-2996

2011

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Solubility thermodynamics of amine boranes in polar solvents

International journal of hydrogen energy, 2021-03, Vol.46 (18), p.10801-10808

2021

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Formation of Surface Impurities on Lithium–Nickel–Manganese–Cobalt Oxides in the Presence of CO 2 and H 2 O

Journal of the American Chemical Society, 2021-07, Vol.143 (27), p.10261-10274

2021

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Electrostatic tuning of ferromagnetic resonance and magnetoelectric interactions in ferrite-piezoelectric heterostructures grown by chemical vapor deposition

Applied physics letters, 2011-11, Vol.99 (19), p.192502-192502-3

2011

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Undulating topography of HfO 2 thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

AIChE journal, 2011-11, Vol.57 (11), p.2989-2996

2011

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Undulating topography of HfO sigma ub 2thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

AIChE journal, 2011-11, Vol.57 (11), p.2989-2989

2011

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Undulating topography of HfO^sub 2^ thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

AIChE journal, 2011-11, Vol.57 (11), p.2989

2011

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Atomic layer deposition of HfO 2: Growth initiation study on metallic underlayers

Thin solid films, 2010, Vol.518 (15), p.4081-4086

2010

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Plasma enhanced chemical vapor deposition of Cr2O3thin films using chromium hexacarbonyl (Cr(CO)6) precursor

Thin solid films, 2008, Vol.516 (21), p.7366-7372

2008

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Atomic layer deposition of Hf02: Growth initiation study on metallic underlayers

Thin solid films, 2010, Vol.518 (15), p.4081-4086

2010

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Effect of O2 flow ratio on the microstructure and stress of room temperature reactively sputtered RuOx thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-05, Vol.23 (3), p.452-459

2005

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Effect of O 2 flow ratio on the microstructure and stress of room temperature reactively sputtered RuO x thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-05, Vol.23 (3), p.452-459

2005

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Hydrogenated silicon nitride thin films deposited between 50 and 250 ° C using nitrogen/silane mixtures with helium dilution

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1999-01, Vol.17 (1), p.108-112

1999

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Comparison of Chemical Vapor Deposited Hafnium Dioxide and Silicon Doped Hafnium Dioxide using either O2, N2O, H2O, O2 plasma, or N2O plasma, and Hf (IV) t-butoxide

MRS proceedings, 2004, Vol.811

2004

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In situ ATR - FTIR spectroscopy of Hf(IV) tert butoxide adsorption on Si and Ge

MRS proceedings, 2006, Vol.917, Article 0917-E09-03

2006

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Comparison of Chemical Vapor Deposited Hafnium Dioxide and Silicon Doped Hafnium Dioxide using either O 2 , N 2 O, H 2 O, O 2 plasma, or N 2 O plasma, and Hf (IV) t-butoxide

MRS proceedings, 2004, Vol.811, Article D7.8

2004

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A Comparison of Plasma Enhanced Chemical Vapor Deposited and Thermally Deposited Hafnium Oxide and Hafnium Silicate Thin Film Using XPS

Surface science spectra, 2003-12, Vol.10 (1), p.182-194

2003

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Effect of O{sub 2} flow ratio on the microstructure and stress of room temperature reactively sputtered RuO{sub x} thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-05, Vol.23 (3)

2005

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Silane consumption and conversion analysis in amorphous silicon and silicon nitride plasma deposition using in situ mass spectroscopy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1998-05, Vol.16 (3), p.1852-1856

1998

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Reaction Processes for Low Temperature (<150°C) Plasma Enhanced Deposition of Hydrogenated Amorphous Silicon Thin-Film Transistors on Transparent Plastic Substrates

MRS proceedings, 1998, Vol.508, Article 19

1998

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Formation of Surface Impurities on Lithium–Nickel–Manganese–Cobalt Oxides in the Presence of CO2 and H2O

Tetrakis(dimethylamido)hafnium Adsorption and Reaction on Hydrogen Terminated Si(100) Surfaces

Comparison of hafnium silicate thin films on silicon (1 0 0) deposited using thermal and plasma enhanced metal organic chemical vapor deposition

Atomic layer deposition of HfO2: Growth initiation study on metallic underlayers

Tetrakis(ethylmethylamido) Hafnium Adsorption and Reaction on Hydrogen-Terminated Si(100) Surfaces

Undulating topography of HfO2 thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

Solubility thermodynamics of amine boranes in polar solvents

Formation of Surface Impurities on Lithium–Nickel–Manganese–Cobalt Oxides in the Presence of CO 2 and H 2 O

Electrostatic tuning of ferromagnetic resonance and magnetoelectric interactions in ferrite-piezoelectric heterostructures grown by chemical vapor deposition

Undulating topography of HfO 2 thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

Undulating topography of HfO sigma ub 2thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

Undulating topography of HfO^sub 2^ thin films deposited in a mesoscale reactor using hafnium (IV) tert butoxide

Atomic layer deposition of HfO 2: Growth initiation study on metallic underlayers

Plasma enhanced chemical vapor deposition of Cr2O3thin films using chromium hexacarbonyl (Cr(CO)6) precursor

Atomic layer deposition of Hf02: Growth initiation study on metallic underlayers

Effect of O2 flow ratio on the microstructure and stress of room temperature reactively sputtered RuOx thin films

Effect of O 2 flow ratio on the microstructure and stress of room temperature reactively sputtered RuO x thin films

Hydrogenated silicon nitride thin films deposited between 50 and 250 ° C using nitrogen/silane mixtures with helium dilution

Comparison of Chemical Vapor Deposited Hafnium Dioxide and Silicon Doped Hafnium Dioxide using either O2, N2O, H2O, O2 plasma, or N2O plasma, and Hf (IV) t-butoxide

In situ ATR - FTIR spectroscopy of Hf(IV) tert butoxide adsorption on Si and Ge

Comparison of Chemical Vapor Deposited Hafnium Dioxide and Silicon Doped Hafnium Dioxide using either O 2 , N 2 O, H 2 O, O 2 plasma, or N 2 O plasma, and Hf (IV) t-butoxide

A Comparison of Plasma Enhanced Chemical Vapor Deposited and Thermally Deposited Hafnium Oxide and Hafnium Silicate Thin Film Using XPS

Effect of O{sub 2} flow ratio on the microstructure and stress of room temperature reactively sputtered RuO{sub x} thin films

Silane consumption and conversion analysis in amorphous silicon and silicon nitride plasma deposition using in situ mass spectroscopy

Reaction Processes for Low Temperature (<150°C) Plasma Enhanced Deposition of Hydrogenated Amorphous Silicon Thin-Film Transistors on Transparent Plastic Substrates

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