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Operational SER Calculations on the SAC-C Orbit Using the Multi-Scales Single Event Phenomena Predictive Platform (MUSCA ^)

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3032-3042

2009

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Degradation Study of InGaAsN p-i-n Solar Cell Under 1-MeV Electron Irradiation

IEEE transactions on nuclear science, 2021-08, Vol.68 (8), p.1694-1700

2021

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ICARE On-Board SAC-C: More Than 8 Years of SEU and MCU, Analysis and Prediction

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.2000-2009

2010

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Collected Charge Analysis for a New Transient Model by TCAD Simulation in 90 nm Technology

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1869-1875

2010

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From the Reference SEU Monitor to the Technology Demonstration Module On-Board PROBA-II

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3082-3087

2008

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Impact of the Solar Flares on the SER Dynamics on Micro and Nanometric Technologies

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3127-3134

2010

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SEU rate calculation with GEANT4 (comparison with CREME 86)

IEEE transactions on nuclear science, 2004-10, Vol.51 (5), p.2805-2810

2004

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Multi-scale modeling to investigate the single event effects for space missions

Acta astronautica, 2011-09, Vol.69 (7), p.526-536

2011

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Using Subthreshold Heavy Ion Upset Cross Section to Calculate Proton Sensitivity

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2394-2399

2007

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Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror

Microelectronics and reliability, 2009-09, Vol.49 (9), p.946-951

2009

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In-flight observations of the radiation environment and its effects on devices in the SAC-C polar orbit

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2782-2787

2002

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Spectrometers Results of Material Exposure and Degradation Experiment Onboard International Space Station

Journal of spacecraft and rockets, 2011-01, Vol.48 (1), p.38-44

2011

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Probing With Heavy Ions the SET Sensitivity of Linear Devices

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3321-3327

2008

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Memories Response to MBU and Semi-Empirical Approach for SEE Rate Calculation

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1787-1793

2006

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Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMs

IEEE transactions on nuclear science, 2002-06, Vol.49 (3), p.1480-1485

2002

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2008 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Editors

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2810-2810

2008

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An empirical model for predicting proton induced upset

IEEE transactions on nuclear science, 1996-12, Vol.43 (6), p.2827-2832

1996

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Preliminary Flight Data From the Materials Exposure and Degradation experiment (MEDET)

Proceedings of the 9th International Conference on Protection of Materials and Structures From Space Environment (AIP Conference Proceedings Volume 1087), 2009, Vol.1087, p.195-206

2009

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Radiation effects on electronic devices in space

Aerospace science and technology, 2005, Vol.9 (1), p.93-99

Duzellier, Sophie

2005

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Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO4 and Rb:KTiOPO4

Optical materials express, 2017-11, Vol.7 (11), p.4138

2017

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Two CMOS memory cells suitable for the design of SEU-tolerant VLSI circuits

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.2229-2234

1994

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SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.1338-1346

2011

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Recent trends in single-event effect ground testing

IEEE transactions on nuclear science, 1996-04, Vol.43 (2), p.671-677

1996

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Estimation of latch-up sensitive thickness and critical energy using large inclination heavy ion beams

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.2378-2385

1997

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Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO_4 and Rb:KTiOPO_4

Optical materials express, 2017-11, Vol.7 (11), p.4138

2017

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Operational SER Calculations on the SAC-C Orbit Using the Multi-Scales Single Event Phenomena Predictive Platform (MUSCA ^)

Degradation Study of InGaAsN p-i-n Solar Cell Under 1-MeV Electron Irradiation

ICARE On-Board SAC-C: More Than 8 Years of SEU and MCU, Analysis and Prediction

Collected Charge Analysis for a New Transient Model by TCAD Simulation in 90 nm Technology

From the Reference SEU Monitor to the Technology Demonstration Module On-Board PROBA-II

Impact of the Solar Flares on the SER Dynamics on Micro and Nanometric Technologies

SEU rate calculation with GEANT4 (comparison with CREME 86)

Multi-scale modeling to investigate the single event effects for space missions

Using Subthreshold Heavy Ion Upset Cross Section to Calculate Proton Sensitivity

Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror

In-flight observations of the radiation environment and its effects on devices in the SAC-C polar orbit

Spectrometers Results of Material Exposure and Degradation Experiment Onboard International Space Station

Probing With Heavy Ions the SET Sensitivity of Linear Devices

Memories Response to MBU and Semi-Empirical Approach for SEE Rate Calculation

Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMs

2008 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Editors

An empirical model for predicting proton induced upset

Preliminary Flight Data From the Materials Exposure and Degradation experiment (MEDET)

Radiation effects on electronic devices in space

Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO4 and Rb:KTiOPO4

Two CMOS memory cells suitable for the design of SEU-tolerant VLSI circuits

SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node

Recent trends in single-event effect ground testing

Estimation of latch-up sensitive thickness and critical energy using large inclination heavy ion beams

Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO_4 and Rb:KTiOPO_4

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