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Dissipative quantum transport in silicon nanowires based on Wigner transport equation

Journal of applied physics, 2011-11, Vol.110 (9), p.093710-093710-8

Barraud, Sylvain

2011

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Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

Nano letters, 2016-03, Vol.16 (3), p.1614-1619

2016

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Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

Nano letters, 2014-04, Vol.14 (4), p.2094-2098

2014

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A CMOS dynamic random access architecture for radio-frequency readout of quantum devices

Nature electronics, 2019-06, Vol.2 (6), p.236-242

2019

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Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

npj quantum information, 2018-02, Vol.4 (1), p.1-7, Article 6

2018

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pH Quantification in Human Dermal Interstitial Fluid Using Ultra-Thin SOI Silicon Nanowire ISFETs and a High-Sensitivity Constant-Current Approach

Biosensors (Basel), 2023-09, Vol.13 (10), p.908

2023

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Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2012-11, Vol.101 (21), p.213502

2012

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Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.492-499

2021

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Integration of Ultra-Low Volume Pneumatic Microfluidics with a Three-Dimensional Electrode Network for On-Chip Biochemical Sensing

Micromachines (Basel), 2021-06, Vol.12 (7), p.762

2021

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High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

Physical review. X, 2015-08, Vol.5 (3), p.031024, Article 031024

2015

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Dopant-controlled single-electron pumping through a metallic island

Applied physics letters, 2016-05, Vol.108 (21)

2016

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Large Dispersive Interaction between a CMOS Double Quantum Dot and Microwave Photons

PRX quantum, 2021-05, Vol.2 (2), p.020315, Article 020315

2021

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The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility

Journal of applied physics, 2008-10, Vol.104 (7)

2008

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Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

Communications physics, 2018-10, Vol.1 (1), Article 66

2018

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A silicon-based single-electron interferometer coupled to a fermionic sea

Physical review. B, 2018-01, Vol.97 (4), Article 045405

2018

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Phase-coherent quantum transport in silicon nanowires based on Wigner transport equation: Comparison with the nonequilibrium-Green-function formalism

Journal of applied physics, 2009-09, Vol.106 (6), p.063714-063714-7

Barraud, Sylvain

2009

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Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations

Journal of applied physics, 2008-03, Vol.103 (6), p.063715-063715-9

2008

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Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits

Physical review letters, 2018-03, Vol.120 (13), p.137702-137702, Article 137702

2018

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Very Low Temperature (Cyclic) Deposition / Etch of In-Situ Raised Sources and Drains

ECS transactions, 2014-08, Vol.64 (6), p.941-957

2014

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Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

Nanotechnology, 2020-10, Vol.31 (41), p.415201-415201

2020

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Interface traps density extraction through transient measurements in junctionless transistors

Solid-state electronics, 2022-08, Vol.194, p.108302, Article 108302

2022

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Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures

Solid-state electronics, 2023-10, Vol.208, p.108716, Article 108716

2023

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Modeling the interface traps-related low frequency noise in triple-gate SOI junctionless nanowire transistors

Microelectronic engineering, 2019-07, Vol.215, p.111005, Article 111005

2019

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Analytical Model for Low-Frequency Noise in Junctionless Nanowire Transistors

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2536-2543, Article 2536

2020

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Dissipative quantum transport in silicon nanowires based on Wigner transport equation

Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor

A CMOS dynamic random access architecture for radio-frequency readout of quantum devices

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

pH Quantification in Human Dermal Interstitial Fluid Using Ultra-Thin SOI Silicon Nanowire ISFETs and a High-Sensitivity Constant-Current Approach

Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures

Integration of Ultra-Low Volume Pneumatic Microfluidics with a Three-Dimensional Electrode Network for On-Chip Biochemical Sensing

High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

Dopant-controlled single-electron pumping through a metallic island

Large Dispersive Interaction between a CMOS Double Quantum Dot and Microwave Photons

The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility

Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

A silicon-based single-electron interferometer coupled to a fermionic sea

Phase-coherent quantum transport in silicon nanowires based on Wigner transport equation: Comparison with the nonequilibrium-Green-function formalism

Effect of strain on the electron effective mobility in biaxially strained silicon inversion layers: An experimental and theoretical analysis via atomic force microscopy measurements and Kubo-Greenwood mobility calculations

Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits

Very Low Temperature (Cyclic) Deposition / Etch of In-Situ Raised Sources and Drains

Reduction of random telegraph noise by high-pressure deuterium annealing for p-type omega-gate nanowire FET

Interface traps density extraction through transient measurements in junctionless transistors

Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures

Modeling the interface traps-related low frequency noise in triple-gate SOI junctionless nanowire transistors

Analytical Model for Low-Frequency Noise in Junctionless Nanowire Transistors

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