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Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1990-1994

2011

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MOS-IGBT power devices for high-temperature operation in smart power SOI technology

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1980-1984

2011

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Autonomous power supply for aeronautical health monitoring sensors

Journal of physics. Conference series, 2018-07, Vol.1052 (1), p.12031

2018

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Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation

Microelectronics and reliability, 2013-02, Vol.53 (2), p.221-228

2013

Volltextzugriff (PDF)

Powering a Commercial Datalogger by Energy Harvesting from Generated Aeroacoustic Noise

Journal of physics. Conference series, 2014-01, Vol.557 (1), p.12025-5

2014

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SEB Characterization of Commercial Power MOSFETs With Backside Laser and Heavy Ions of Different Ranges

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2166-2173

2008

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Electrostatic discharge failure analysis of capacitive RF MEMS switches

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1818-1822

2007

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ESD failure signature in capacitive RF MEMS switches

Microelectronics and reliability, 2008-08, Vol.48 (8), p.1237-1240

2008

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Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1379-1382

2010

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Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events

Solid-state electronics, 2008-05, Vol.52 (5), p.663-674

2008

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Transient voltage overshoots of high voltage ESD protections based on bipolar transistors in smart power technology

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010, p.253-256

2010

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Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency

IEEE journal of solid-state circuits, 2004-10, Vol.39 (10), p.1778-1782

2004

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Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology

IEEE journal of solid-state circuits, 2001-09, Vol.36 (9), p.1373-1381

2001

Volltextzugriff (PDF)

20GHz on-chip measurement of ESD waveform for system level analysis

Microelectronics and reliability, 2015-11, Vol.55 (11), p.2276-2283

2015

Volltextzugriff (PDF)

Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1900-1907

2010

Volltextzugriff (PDF)

Size Effect on Properties of Varistors Made From Zinc Oxide Nanoparticles Through Low Temperature Spark Plasma Sintering

Advanced functional materials, 2009-06, Vol.19 (11), p.1775-1783

2009

Volltextzugriff (PDF)

Long-term reliability of silicon bipolar transistors subjected to low constraints

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1590-1594

2007

Volltextzugriff (PDF)

Study of the ESD defects impact on ICs reliability

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1811-1815

2004

Volltextzugriff (PDF)

Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation

Microelectronics and reliability, 2001-09, Vol.41 (9), p.1539-1544

2001

Volltextzugriff (PDF)

Comparative study of sensitive volume and triggering criteria of SEB in 600V planar and trench IGBTs

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1990-1994

2011

Volltextzugriff (PDF)

Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation : ADVANCES IN ELECTROSTATIC DISCHARGE (ESD) PROTECTION FOR ICs

Microelectronics and reliability, 2013, Vol.53 (2), p.221-228

2013

Volltextzugriff (PDF)

TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology

Microelectronics and reliability, 2003, Vol.43 (1), p.71-79

2003

Volltextzugriff (PDF)

Determination of the ESD Failure Cause Through its Signature

Microelectronics and reliability, 2003-09, Vol.43 (9), p.1551-1556

2003

Volltextzugriff (PDF)

Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1781-1786

2004

Volltextzugriff (PDF)

Efficient TCAD methodology for ESD failure current prediction of smart power ESD protection

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005, 2005, p.115-118

2005

Volltextzugriff (PDF)

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Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs

MOS-IGBT power devices for high-temperature operation in smart power SOI technology

Autonomous power supply for aeronautical health monitoring sensors

Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation

Powering a Commercial Datalogger by Energy Harvesting from Generated Aeroacoustic Noise

SEB Characterization of Commercial Power MOSFETs With Backside Laser and Heavy Ions of Different Ranges

Electrostatic discharge failure analysis of capacitive RF MEMS switches

ESD failure signature in capacitive RF MEMS switches

Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm

Analytical description of the injection ratio of self-biased bipolar transistors under the very high injection conditions of ESD events

Transient voltage overshoots of high voltage ESD protections based on bipolar transistors in smart power technology

Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency

Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology

20GHz on-chip measurement of ESD waveform for system level analysis

Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS

Size Effect on Properties of Varistors Made From Zinc Oxide Nanoparticles Through Low Temperature Spark Plasma Sintering

Long-term reliability of silicon bipolar transistors subjected to low constraints

Study of the ESD defects impact on ICs reliability

Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation

Comparative study of sensitive volume and triggering criteria of SEB in 600V planar and trench IGBTs

Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation : ADVANCES IN ELECTROSTATIC DISCHARGE (ESD) PROTECTION FOR ICs

TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology

Determination of the ESD Failure Cause Through its Signature

Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications

Efficient TCAD methodology for ESD failure current prediction of smart power ESD protection

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