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OFF-State Leakage and Performance Variations Associated With Germanium Preamorphization Implant in Silicon-Germanium Channel pFET

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3654-3661

2018

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Full D-Band Transmit-Receive Module for Phased Array Systems in 130-nm SiGe BiCMOS

IEEE solid-state circuits letters, 2021, Vol.4, p.40-43

2021

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Ge/SiGe superlattices for nanostructured thermoelectric modules

Thin solid films, 2013-09, Vol.543, p.153-156

2013

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On the Potential of SiGe HBTs for Extreme Environment Electronics

Proceedings of the IEEE, 2005, Vol.93 (9), p.1559-1582

Cressler, J.D.

2005

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Enhancement of Thermoelectric Properties by Modulation-Doping in Silicon Germanium Alloy Nanocomposites

Nano letters, 2012-04, Vol.12 (4), p.2077-2082

2012

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Investigation of degradation behavior under negative bias temperature stress in Si/Si0.8Ge0.2 metal-oxide-semiconductor capacitors

Journal of physics. D, Applied physics, 2021-11, Vol.54 (47)

2021

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Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects

IEEE transactions on nuclear science, 2022-06, Vol.69 (6), p.1242-1248

2022

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Miniaturized Transistors

2019

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Lattice-alignment mechanism of SiGe on Sapphire

Acta materialia, 2018-02, Vol.145, p.1-7

2018

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High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition

Microelectronic engineering, 2004-10, Vol.76 (1-4), p.279-284

2004

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Scaling Challenges for Advanced CMOS Devices

International journal of high speed electronics, 2017-03, Vol.26 (1n02), p.1740001

2017

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Waveguide Integration and Packaging of a Multi-Channel Power Amplifier in a SiGe BiCMOS Technology for mm-Wave Applications

IEEE transactions on components, packaging, and manufacturing technology (2011), 2024, Vol.In Press, p.1-1

2024

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An active 300 GHz Down-Conversion Mixer in BiCMOS SiGe Process

2024 IEEE 67th International Midwest Symposium on Circuits and Systems (MWSCAS), 2024, p.90-93

2024

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Terahertz Light-Field Imaging With Silicon Technologies

IEEE open journal of solid-state circuits, 2024, Vol.4, p.1-11

2024

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Modeling of HCD Kinetics for Full } / } Span in the Presence of NBTI, Electron Trapping, and Self Heating in RMG SiGe p-FinFETs

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2502-2508

2019

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High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition

Thin solid films, 2004-07, Vol.459 (1), p.37-40

2004

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Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update

Energies (Basel), 2022-08, Vol.15 (15), p.5457

2022

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Small-signal characterization and modelling of 55nm SiGe BiCMOS HBT up to 325GHz

Solid-state electronics, 2017-03, Vol.129, p.150-156

2017

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Performance Analysis of SiGe HBT-Based N-Path Receiver Without Nonoverlapping LO Signal

2024 IEEE 67th International Midwest Symposium on Circuits and Systems (MWSCAS), 2024, p.305-309

2024

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Hetero-Integrated InP RTD-SiGe BiCMOS Source With Fundamental Injection Locking

IEEE microwave and wireless technology letters (Print), 2024-09, p.1-4

2024

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High-Breakdown, High- f} Multiport Stacked-Transistor Topologies for the -Band Power Amplifiers

IEEE journal of solid-state circuits, 2017-05, Vol.52 (5), p.1305-1319

2017

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On Designing a Compact Two-Way Differential Power Divider/Combiner Based on a SiGe BiCMOS Process for Automotive Radar Applications Using FEM Simulators

Advanced Research in Technologies, Information, Innovation and Sustainability, p.218-229

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Compact On-Chip Bandpass Filter With Improved In-Band Flatness and Stopband Attenuation in 0.13- \mu \text (Bi)-CMOS Technology

IEEE electron device letters, 2017-10, Vol.38 (10), p.1359-1362

2017

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Half-terahertz operation of SiGe HBTs

IEEE electron device letters, 2006-07, Vol.27 (7), p.567-569

2006

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Investigation of N + SiGe Gate Stacked V-TFET Based on Dopingless Charge Plasma for Gas Sensing Application

SILICON, 2022-07, Vol.14 (11), p.6205-6218

2022

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OFF-State Leakage and Performance Variations Associated With Germanium Preamorphization Implant in Silicon-Germanium Channel pFET

Full D-Band Transmit-Receive Module for Phased Array Systems in 130-nm SiGe BiCMOS

Ge/SiGe superlattices for nanostructured thermoelectric modules

On the Potential of SiGe HBTs for Extreme Environment Electronics

Enhancement of Thermoelectric Properties by Modulation-Doping in Silicon Germanium Alloy Nanocomposites

Investigation of degradation behavior under negative bias temperature stress in Si/Si0.8Ge0.2 metal-oxide-semiconductor capacitors

Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects

Miniaturized Transistors

Lattice-alignment mechanism of SiGe on Sapphire

High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition

Scaling Challenges for Advanced CMOS Devices

Waveguide Integration and Packaging of a Multi-Channel Power Amplifier in a SiGe BiCMOS Technology for mm-Wave Applications

An active 300 GHz Down-Conversion Mixer in BiCMOS SiGe Process

Terahertz Light-Field Imaging With Silicon Technologies

Modeling of HCD Kinetics for Full } / } Span in the Presence of NBTI, Electron Trapping, and Self Heating in RMG SiGe p-FinFETs

High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition

Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update

Small-signal characterization and modelling of 55nm SiGe BiCMOS HBT up to 325GHz

Performance Analysis of SiGe HBT-Based N-Path Receiver Without Nonoverlapping LO Signal

Hetero-Integrated InP RTD-SiGe BiCMOS Source With Fundamental Injection Locking

High-Breakdown, High- f} Multiport Stacked-Transistor Topologies for the -Band Power Amplifiers

On Designing a Compact Two-Way Differential Power Divider/Combiner Based on a SiGe BiCMOS Process for Automotive Radar Applications Using FEM Simulators

Compact On-Chip Bandpass Filter With Improved In-Band Flatness and Stopband Attenuation in 0.13- \mu \text (Bi)-CMOS Technology

Half-terahertz operation of SiGe HBTs

Investigation of N + SiGe Gate Stacked V-TFET Based on Dopingless Charge Plasma for Gas Sensing Application

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