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(0 0 l)-oriented Bi 2Sr 2Co 2O y and Ca 3Co 4O 9 films: Self-assembly orientation and growth mechanism by chemical solution deposition

Acta materialia, 2010, Vol.58 (12), p.4281-4291

2010

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A 0.003 mm2 5.2 mW/tap 20 GBd inductor-less 5-tap analog RX-FFE

2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits), 2016, p.1-2

2016

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A 0.01-mm2 1.2-pJ/bit 6.4-to-8Gb/s Reference-less FD-Less BBCDR Using a Deliberately-Clock-Selected Strobe Point Based on a 2π/3-Interval Phase

2021 IEEE MTT-S International Microwave Symposium (IMS), 2021, p.386-389

2021

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A 0.02% THD and 80 dB PSRR filterless class D amplifier with direct lithium battery hookup in mobile application

半导体学报：英文版, 2017, Vol.38 (7), p.56-63

Hao Zheng Zhangming Zhu Rui Ma

2017

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A 0.02% THD and 80 dB PSRR filterless class D amplifier with direct lithium battery hookup in mobile application

Journal of semiconductors, 2017-07, Vol.38 (7), p.60-67

2017

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A 0.02% THD and 80 dB PSRR filterless class D amplifier with direct lithium battery hookup in mobile application Project supported by the National Natural Science Foundation of China (Nos. 61234002, 61322405, 61306044)

Journal of semiconductors, 2017-07, Vol.38 (7)

2017

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0.02-wavelengths-thick transmission-type designer wave plate with high efficiency

Journal of physics. D, Applied physics, 2019-09, Vol.52 (37), p.375105

2019

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A 0.0325-mm² 114-to-147-GHz 6-Bit Passive Vector-Modulated Phase Shifter With MN-Embedded Isolated Power Combiner Achieving

IEEE transactions on circuits and systems. I, Regular papers, 2023-01, Vol.70 (11), p.4394

2023

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A 0.0325-mm ^2 114-to-147-GHz 6-Bit Passive Vector-Modulated Phase Shifter With MN-Embedded Isolated Power Combiner Achieving 3.7 ^$ RMS Phase Error in 65-nm CMOS

IEEE transactions on circuits and systems. I, Regular papers, 2023-08, p.1-12

2023

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A 0.035mm2 150mA fast-response low-dropout regulator based on matching-enhanced error amplifier and multi-threshold-controlled unity-gain buffer in 0.13μm CMOS

2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016, p.2703-2706

2016

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A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS

2014 IEEE International Symposium on Radio-Frequency Integration Technology, 2014, p.1-3

2014

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A 0.04 mm2/Channel Neural Amplifier with An Input-Referred Noise of 4.6 µVrms and Power Consumption of 3 µW

2024 IEEE International Symposium on Circuits and Systems (ISCAS), 2024, p.1-5

2024

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A 0.09°/h Bias-Instability MEMS Gyroscope Working With a Fixed Resonance Frequency

IEEE sensors journal, 2021-11, Vol.21 (21), p.23787-23798

2021

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Al 0.1 Ga 0.9 N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 10 6

IEEE electron device letters, 2022-09, Vol.43 (9), p.1479-1482

2022

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Al 0.1 Ga 0.9 N p-i-n ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown

Optics express, 2023-11, Vol.31 (23), p.37516

2023

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A (0, 1)-quadratic programming based relay selection method

2015 IEEE/CIC International Conference on Communications in China (ICCC), 2015, p.1-4

2015

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0/1 space hopping technique using backward training method with pre-compensation

2013 IEEE International Conference on Signal Processing, Communication and Computing (ICSPCC 2013), 2013, p.1-6

2013

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0/1 space hopping transceiver technology for transmission security based on reverse training

2013 IEEE International Conference on Signal Processing, Communication and Computing (ICSPCC 2013), 2013, p.1-6

2013

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A 0-100GHz Channel Integrated RoF System Based on Optical Frequency Comb and Wavelength Selective Switch

2016 Asia Communications and Photonics Conference (ACP), 2016, p.1-3

2016

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A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement

2017 IEEE Custom Integrated Circuits Conference (CICC), 2017, p.1-4

2017

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0.16BaFeO3-0.84MgFe2O4 hexa-spinel composited ferrites with enhanced magneto-dielectric properties for miniaturized high-frequency antennas

Materials today advances, 2024-06, Vol.22, p.100505, Article 100505

2024

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0.18 [micro sign]m CMOS dual-band UWB LNA with interference rejection

Electronics letters, 2007, Vol.43 (20), p.1096

2007

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0.18 mu m CMOS dual-band UWB LNA with interference rejection

Electronics letters, 2007-09, Vol.43 (20), p.1-1

2007

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A 0.18/spl mu/m CMOS Dual-Band UWB Transceiver

2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007, p.114-590

2007

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0.18 /spl mu/m SiGe BiCMOS technology for wireless and 40 Gb/s communication products

Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 2001, p.147-150

2001

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(0 0 l)-oriented Bi 2Sr 2Co 2O y and Ca 3Co 4O 9 films: Self-assembly orientation and growth mechanism by chemical solution deposition

A 0.003 mm2 5.2 mW/tap 20 GBd inductor-less 5-tap analog RX-FFE

A 0.01-mm2 1.2-pJ/bit 6.4-to-8Gb/s Reference-less FD-Less BBCDR Using a Deliberately-Clock-Selected Strobe Point Based on a 2π/3-Interval Phase

A 0.02% THD and 80 dB PSRR filterless class D amplifier with direct lithium battery hookup in mobile application

A 0.02% THD and 80 dB PSRR filterless class D amplifier with direct lithium battery hookup in mobile application

A 0.02% THD and 80 dB PSRR filterless class D amplifier with direct lithium battery hookup in mobile application Project supported by the National Natural Science Foundation of China (Nos. 61234002, 61322405, 61306044)

0.02-wavelengths-thick transmission-type designer wave plate with high efficiency

A 0.0325-mm² 114-to-147-GHz 6-Bit Passive Vector-Modulated Phase Shifter With MN-Embedded Isolated Power Combiner Achieving

A 0.0325-mm ^2 114-to-147-GHz 6-Bit Passive Vector-Modulated Phase Shifter With MN-Embedded Isolated Power Combiner Achieving 3.7 ^$ RMS Phase Error in 65-nm CMOS

A 0.035mm2 150mA fast-response low-dropout regulator based on matching-enhanced error amplifier and multi-threshold-controlled unity-gain buffer in 0.13μm CMOS

A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS

A 0.04 mm2/Channel Neural Amplifier with An Input-Referred Noise of 4.6 µVrms and Power Consumption of 3 µW

A 0.09°/h Bias-Instability MEMS Gyroscope Working With a Fixed Resonance Frequency

Al 0.1 Ga 0.9 N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 10 6

Al 0.1 Ga 0.9 N p-i-n ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown

A (0, 1)-quadratic programming based relay selection method

0/1 space hopping technique using backward training method with pre-compensation

0/1 space hopping transceiver technology for transmission security based on reverse training

A 0-100GHz Channel Integrated RoF System Based on Optical Frequency Comb and Wavelength Selective Switch

A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement

0.16BaFeO3-0.84MgFe2O4 hexa-spinel composited ferrites with enhanced magneto-dielectric properties for miniaturized high-frequency antennas

0.18 [micro sign]m CMOS dual-band UWB LNA with interference rejection

0.18 mu m CMOS dual-band UWB LNA with interference rejection

A 0.18/spl mu/m CMOS Dual-Band UWB Transceiver

0.18 /spl mu/m SiGe BiCMOS technology for wireless and 40 Gb/s communication products

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