UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Time-dependent Hinode/EIS Atlas of a Coronal Mass Ejection Containing Cool Material

The Astrophysical journal, 2024-08, Vol.970 (2), p.182

2024

Volltextzugriff (PDF)

Using the Cartwheel CME to Predict Off-limb Observations of CMEs for New and Upcoming UV and EUV Spectrometers

The Astrophysical journal, 2024-10, Vol.974 (1), p.32

2024

Volltextzugriff (PDF)

Simulating Compressive Stream Interaction Regions during Parker Solar Probe’s First Perihelion Using Stream-aligned Magnetohydrodynamics

The Astrophysical journal, 2024-02, Vol.962 (2), p.182

2024

Volltextzugriff (PDF)

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Advanced electronic materials, 2018-01, Vol.4 (1), p.n/a

2018

Volltextzugriff (PDF)

Time-resolved cathodoluminescence measurement of the effects of α-particle-related damage on minority hole lifetime in free-standing n-GaN

Applied physics letters, 2024-10, Vol.125 (15)

2024

Volltextzugriff (PDF)

Highly radiative nature of ultra-thin c-plane Al-rich AlGaN/AlN quantum wells for deep ultraviolet emitters

Applied physics letters, 2019-03, Vol.114 (10)

2019

Volltextzugriff (PDF)

AlGaN devices and growth of device structures

Journal of materials science, 2015-05, Vol.50 (9), p.3267-3307

2015

Volltextzugriff (PDF)

Enhanced far ultraviolet spectral response and gain in SiC avalanche photodiodes

Applied physics letters, 2021-05, Vol.118 (22)

2021

Volltextzugriff (PDF)

Optically pumped UV lasers grown on bulk AlN substrates

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.822-825

2012

Volltextzugriff (PDF)

Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (011̄2) sapphire by metalorganic chemical vapor deposition

Journal of applied physics, 1999-03, Vol.85 (5), p.2595-2602

1999

Volltextzugriff (PDF)

P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes

Applied physics letters, 2012-08, Vol.101 (9), p.93506

2012

Volltextzugriff (PDF)

Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well

Applied physics letters, 2009-07, Vol.95 (3)

2009

Volltextzugriff (PDF)

Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy

Applied physics letters, 2006-08, Vol.89 (7)

2006

Volltextzugriff (PDF)

Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys

Applied physics letters, 2005-01, Vol.86 (3)

2005

Volltextzugriff (PDF)

Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN

Applied physics letters, 2008-10, Vol.93 (17)

2008

Volltextzugriff (PDF)

High contrast, ultrafast optically addressed ultraviolet light modulator based upon optical anisotropy in ZnO films grown on R -plane sapphire

Applied physics letters, 1999-01, Vol.74 (4), p.507-509

1999

Volltextzugriff (PDF)

Impact of oxygen source parameters on homoepitaxial ZnO films grown at low-temperature on Zn-polar substrates

Journal of alloys and compounds, 2013-03, Vol.552, p.127-130

2013

Volltextzugriff (PDF)

In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN

Applied physics letters, 2009-03, Vol.94 (9)

2009

Volltextzugriff (PDF)

Effect of polarity on Ni/InN interfacial reactions

Applied physics letters, 2013-01, Vol.102 (2)

2013

Volltextzugriff (PDF)

Formalizing chemical physics using the Lean theorem prover

Digital discovery, 2024-02, Vol.3 (2), p.264-28

2024

Volltextzugriff (PDF)

Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

Applied physics letters, 2000-02, Vol.76 (9), p.1155-1157

2000

Volltextzugriff (PDF)

Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices

Physica status solidi. C, 2015-04, Vol.12 (4-5), p.434-438

2015

Volltextzugriff (PDF)

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Applied physics letters, 2011-12, Vol.99 (25), p.251110-251110-3

2011

Volltextzugriff (PDF)

Evaluation of AlGaN-based deep ultraviolet emitter active regions by temperature dependent time-resolved photoluminescence

Physica status solidi. C, 2010-10, Vol.7 (10), p.2390-2393

2010

Volltextzugriff (PDF)

Direction-dependent band nonparabolicity effects on high-field transient electron transport in GaN

Applied physics letters, 2003-05, Vol.82 (21), p.3674-3676

2003

Volltextzugriff (PDF)

1 – 25 von 262

Suche als RSS-Feed

Aktive Filter

ThemaEngineering

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(88)
Mit Volltextzugriff
(119)

Publikationsform

Tagungsberichte
(150)
Artikel
(112)

Sprache

Englisch
(254)
Japanisch
(2)

Erscheinungsjahr

n.n

Thema

Science & Technology
(177)
Physical Sciences
(173)
Physics
(172)
Materials Science
(139)
Technology
(135)
Physics, Condensed Matter
(132)
Materials Science, Ceramics
(116)
Materials Science, Characterization & Testing
(114)
Physics, Applied
(41)
Photoluminescence
(13)
Substrates
(13)
Exact Sciences And Technology
(12)
Materials Science, Multidisciplinary
(12)
Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
(11)
Gallium Nitrides
(11)
Light Emitting Diodes
(10)
Optical Sensors
(10)
Gallium Nitride
(9)
Laser Excitation
(9)
Spectroscopy
(9)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)
... seit 90 Tagen
(3)

Menü

Weitere Dienste

Einstellungen

Time-dependent Hinode/EIS Atlas of a Coronal Mass Ejection Containing Cool Material

Using the Cartwheel CME to Predict Off-limb Observations of CMEs for New and Upcoming UV and EUV Spectrometers

Simulating Compressive Stream Interaction Regions during Parker Solar Probe’s First Perihelion Using Stream-aligned Magnetohydrodynamics

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Time-resolved cathodoluminescence measurement of the effects of α-particle-related damage on minority hole lifetime in free-standing n-GaN

Highly radiative nature of ultra-thin c-plane Al-rich AlGaN/AlN quantum wells for deep ultraviolet emitters

AlGaN devices and growth of device structures

Enhanced far ultraviolet spectral response and gain in SiC avalanche photodiodes

Optically pumped UV lasers grown on bulk AlN substrates

Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (011̄2) sapphire by metalorganic chemical vapor deposition

P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes

Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well

Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy

Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys

Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN

High contrast, ultrafast optically addressed ultraviolet light modulator based upon optical anisotropy in ZnO films grown on R -plane sapphire

Impact of oxygen source parameters on homoepitaxial ZnO films grown at low-temperature on Zn-polar substrates

In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN

Effect of polarity on Ni/InN interfacial reactions

Formalizing chemical physics using the Lean theorem prover

Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Evaluation of AlGaN-based deep ultraviolet emitter active regions by temperature dependent time-resolved photoluminescence

Direction-dependent band nonparabolicity effects on high-field transient electron transport in GaN

Aktive Filter

Suchergebnisse filtern