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Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1647-1656

2006

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Ultra-Shallow Junctions Formed By Sub-Melt Laser Annealing

Ion Implantation Technology, 2006, Vol.866, p.129-132

2006

Volltextzugriff (PDF)

Technological aspects of epitaxial CoSi2 layers for CMOS

Applied surface science, 1993-11, Vol.73, p.19-24

1993

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Dislocation formation in silicon implanted at different temperatures

Materials science & engineering. B, Solid-state materials for advanced technology, 1992-11, Vol.15 (2), p.173-186

1992

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Reduction of boron diffusion in silicon by 1 MeV 29Si+ irradiation

Applied physics letters, 1991-03, Vol.58 (9), p.922-924

1991

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Non-destructive characterization of the uniformity of thin cobalt disilicide films by Raman microprobe measurements

Thin solid films, 1994-10, Vol.251 (1), p.45-50

1994

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Two-step anneals to avoid bridging during Co silicidation

Applied surface science, 1993-01, Vol.73, p.162-166

1993

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Non-destructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Thin solid films, 1994-03, Vol.240 (1), p.110-113

1994

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Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

Journal of applied physics, 1992-04, Vol.71 (8), p.3780-3784

1992

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Electrically active, ion implanted boron at the solubility limit in silicon

Applied physics letters, 1993-08, Vol.63 (8), p.1134-1136

1993

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Avoiding preamorphization damage in MeV heavy ion-implanted silicon

Applied physics letters, 1991-06, Vol.58 (24), p.2827-2829

1991

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Reduction of secondary defect formation in MeV B+ ion-implanted Si(100)

Applied physics letters, 1989-10, Vol.55 (18), p.1838-1840

1989

Volltextzugriff (PDF)

Manufacturable Processes for \leq 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1259-1264

2008

Volltextzugriff (PDF)

Formation of ultrathin CoSi2 films using a two-step limited reaction process

Journal of materials research, 1993-12, Vol.8 (12), p.3111-3121

1993

Volltextzugriff (PDF)

Nondestructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Thin solid films, 1994-03, Vol.240 (1-2), p.110-113

1994

Volltextzugriff (PDF)

O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS Flash memory

2009 Proceedings of the European Solid State Device Research Conference, 2009, p.272-275

2009

Volltextzugriff (PDF)

Laser-annealed junctions with advanced CMOS gate stacks for 32nm Node: Perspectives on device performance and manufacturability

2008 Symposium on VLSI Technology, 2008, p.186-187

2008

Volltextzugriff (PDF)

pMOSFET With 200%25 Mobility Enhancement Induced by Multiple Stressors

IEEE electron device letters, 2006-06, Vol.27 (6), p.511-513

2006

Volltextzugriff (PDF)

Structural and electrical characterization of Si(100) implanted with P + and Si + ions along the [100] channelling direction

Materials science & engineering. B, Solid-state materials for advanced technology, 1990-09, Vol.7 (1), p.149-165

1990

Volltextzugriff (PDF)

In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidation

Applied physics letters, 1992-11, Vol.61 (19), p.2296-2298

1992

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Channeling implantation of B and P in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.615-619

1991

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Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1990-03, Vol.48 (1-4), p.448-452

1990

Volltextzugriff (PDF)

The role of extended defects on transient boron diffusion in ion-implanted silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 1992-02, Vol.12 (4), p.307-325

1992

Volltextzugriff (PDF)

Channeled implantation with a parallel scanned ion beam

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1989-02, Vol.37, p.357-360

1989

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Deep implants by channeling implantation

Materials science & engineering. B, Solid-state materials for advanced technology, 1989-02, Vol.2 (1), p.139-143

1989

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Scalability of the Si/sub 1-x/Ge/sub x/ source/drain technology for the 45-nm technology node and beyond

Ultra-Shallow Junctions Formed By Sub-Melt Laser Annealing

Technological aspects of epitaxial CoSi2 layers for CMOS

Dislocation formation in silicon implanted at different temperatures

Reduction of boron diffusion in silicon by 1 MeV 29Si+ irradiation

Non-destructive characterization of the uniformity of thin cobalt disilicide films by Raman microprobe measurements

Two-step anneals to avoid bridging during Co silicidation

Non-destructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

Electrically active, ion implanted boron at the solubility limit in silicon

Avoiding preamorphization damage in MeV heavy ion-implanted silicon

Reduction of secondary defect formation in MeV B+ ion-implanted Si(100)

Manufacturable Processes for \leq 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

Formation of ultrathin CoSi2 films using a two-step limited reaction process

Nondestructive thickness determination of thin cobalt and cobalt disilicide layers on silicon substrates

O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS Flash memory

Laser-annealed junctions with advanced CMOS gate stacks for 32nm Node: Perspectives on device performance and manufacturability

pMOSFET With 200%25 Mobility Enhancement Induced by Multiple Stressors

Structural and electrical characterization of Si(100) implanted with P + and Si + ions along the [100] channelling direction

In situ emissivity measurements to probe the phase transformations during rapid thermal processing Co silicidation

Channeling implantation of B and P in silicon

Range straggling of MeV ions in amorphous silicon: Discrepancies with TRIM

The role of extended defects on transient boron diffusion in ion-implanted silicon

Channeled implantation with a parallel scanned ion beam

Deep implants by channeling implantation

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