UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Nitride spacer aided 0.15 μm AlGaN/GaN HEMT fabrication with optimized gate patterning process

Applied physics letters, 2024-10, Vol.125 (15)

2024

Volltextzugriff (PDF)

Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2014-07, Vol.105 (3)

2014

Volltextzugriff (PDF)

A 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks

Sensors (Basel, Switzerland), 2017-01, Vol.17 (2), p.223

2017

Volltextzugriff (PDF)

A composite algorithm of lithography process in AlGaN/GaN-on-SiC HEMTs manufacturing

Materials science & engineering. B, Solid-state materials for advanced technology, 2024-02, Vol.300, p.117065, Article 117065

2024

Volltextzugriff (PDF)

A New Digital to Analog Converter Based on Low-Offset Bandgap Reference

Journal of Electrical and Computer Engineering, 2017-01, Vol.2017 (2017), p.1-10-004

2017

Volltextzugriff (PDF)

InGaAs MOSFETs with InP drain

72nd Device Research Conference, 2014, p.119-120

2014

Volltextzugriff (PDF)

Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides

Nanotechnology, 2020-03, Vol.31 (12), p.125604-125604

2020

Volltextzugriff (PDF)

Spacer Side-wall Processed 0.15 μm GaN HEMT for Ka-band Application

ECS journal of solid state science and technology, 2024-07, Vol.13 (7), p.75001

2024

Volltextzugriff (PDF)

Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice

Journal of physical chemistry. C, 2020-03, Vol.124 (11), p.6472-6478

2020

Volltextzugriff (PDF)

Regrown Source/Drain Based InGaAs MOSFET with Si 3 N 4 Nitride Spacer

ECS journal of solid state science and technology, 2016, Vol.5 (10), p.Q257-Q259

2016

Volltextzugriff (PDF)

Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS 2 Lattice

Journal of physical chemistry. C, 2020-03, Vol.124 (11), p.6472-6478

2020

Volltextzugriff (PDF)

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with Si[O.sub.2] and [Si.sub.3][N.sub.4]/Si[O.sub.2] Gate Dielectrics

Active and passive electronic components, 2017-01, p.1

2017

Volltextzugriff (PDF)

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO 2 and Si 3 N 4 /SiO 2 Gate Dielectrics

Active and passive electronic components, 2017, Vol.2017, p.1-7

2017

Volltextzugriff (PDF)

Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric

Applied physics letters, 2015-05, Vol.106 (20)

2015

Volltextzugriff (PDF)

An Area-Efficient and Programmable 4 × 25-to-28.9 Gb/s Optical Receiver with DCOC in 0.13 µm SiGe BiCMOS

Electronics (Basel), 2020-06, Vol.9 (6), p.1032

2020

Volltextzugriff (PDF)

A Generic UVM Verification Framework Based on Two-Stage Comparison for Protocol-Agnostic Data Streams in Digital Designs

2024 9th International Conference on Electronic Technology and Information Science (ICETIS), 2024, p.704-710

2024

Volltextzugriff (PDF)

A Wideband 6-bit Phase Shifter with Low RMS Error in 65nm CMOS Technology

2023 8th International Conference on Integrated Circuits and Microsystems (ICICM), 2023, p.26-29

2023

Volltextzugriff (PDF)

A High Performance Blockchain PGPBFT Consensus Algorithm in Integrated Circuit Protection Applications

2022 IEEE 2nd International Conference on Computer Communication and Artificial Intelligence (CCAI), 2022, p.102-107

2022

Volltextzugriff (PDF)

Ft of 100GHz for 100nm multi-gate In0.53Ga0.45As MOSFET

2011 International Semiconductor Device Research Symposium (ISDRS), 2011, p.1-2

2011

Volltextzugriff (PDF)

Effect of Gate Voltage Stress on InGaAs MOSFET With HfO 2 or Al 2 O 3 Dielectric

IEEE transactions on device and materials reliability, 2016-06, Vol.16 (2), p.112-116

2016

Volltextzugriff (PDF)

Effect of Gate Voltage Stress on InGaAs MOSFET With HfO sub(2) or Al sub(2)O sub(3) Dielectric

IEEE transactions on device and materials reliability, 2016-06, Vol.16 (2), p.112-116

2016

Volltextzugriff (PDF)

1 – 21 von 21

Suche als RSS-Feed

Aktive Filter

ThemaEngineering

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(16)
Mit Volltextzugriff
(16)

Publikationsform

Sprache

Englisch
(21)

Erscheinungsjahr

n.n

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Nitride spacer aided 0.15 μm AlGaN/GaN HEMT fabrication with optimized gate patterning process

Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

A 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks

A composite algorithm of lithography process in AlGaN/GaN-on-SiC HEMTs manufacturing

A New Digital to Analog Converter Based on Low-Offset Bandgap Reference

InGaAs MOSFETs with InP drain

Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides

Spacer Side-wall Processed 0.15 μm GaN HEMT for Ka-band Application

Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice

Regrown Source/Drain Based InGaAs MOSFET with Si 3 N 4 Nitride Spacer

Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS 2 Lattice

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with Si[O.sub.2] and [Si.sub.3][N.sub.4]/Si[O.sub.2] Gate Dielectrics

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO 2 and Si 3 N 4 /SiO 2 Gate Dielectrics

Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric

An Area-Efficient and Programmable 4 × 25-to-28.9 Gb/s Optical Receiver with DCOC in 0.13 µm SiGe BiCMOS

A Generic UVM Verification Framework Based on Two-Stage Comparison for Protocol-Agnostic Data Streams in Digital Designs

A Wideband 6-bit Phase Shifter with Low RMS Error in 65nm CMOS Technology

A High Performance Blockchain PGPBFT Consensus Algorithm in Integrated Circuit Protection Applications

Ft of 100GHz for 100nm multi-gate In0.53Ga0.45As MOSFET

Effect of Gate Voltage Stress on InGaAs MOSFET With HfO 2 or Al 2 O 3 Dielectric

Effect of Gate Voltage Stress on InGaAs MOSFET With HfO sub(2) or Al sub(2)O sub(3) Dielectric

Aktive Filter

Suchergebnisse filtern