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Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes

Computer physics communications, 2015-04, Vol.189, p.31-36

2015

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Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

Journal of applied physics, 2017-12, Vol.122 (22)

2017

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Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors

Applied surface science, 2014-03, Vol.295, p.173-179

2014

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The role of probe oxide in local surface conductivity measurements

Journal of applied physics, 2015-05, Vol.117 (17)

2015

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Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12030

2015

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The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12065

2015

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Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO 2 interface charges and quantum mechanical effects

IOP conference series. Materials Science and Engineering, 2019-04, Vol.504, p.12021

2019

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Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length

Journal of physics. Conference series, 2010-07, Vol.242 (1), p.012011

2010

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A study of the interface roughness effect in Si nanowires using a full 3D NEGF approach

Physica. E, Low-dimensional systems & nanostructures, 2007-03, Vol.37 (1), p.168-172

2007

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Effect of interface state trap density on the performance of scaled surface channel In0.3Ga0.7 As MOSFETs

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012122

2009

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Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

Solid-state electronics, 2018-04, Vol.142 (C)

2018

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Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study

Mathematics and computers in simulation, 2003-03, Vol.62 (3), p.357-366

2003

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Electron transport process in quantum cascade intersubband semiconductor lasers

Journal of applied physics, 2001-02, Vol.89 (4), p.2001-2005

2001

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Simulation study of scaled In 0.53 Ga 0.47 As and Si FinFETs for sub-16 nm technology nodes

Semiconductor science and technology, 2016-07, Vol.31 (7), p.75005

2016

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Impact of cross-section of 10.4 nm gate length Ino.53Gao.47As FinFETs on metal grain variability

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.241-244

2016

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Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In 0.53 Ga 0.47 As GAA MOSFET

IEEE electron device letters, 2013-02, Vol.34 (2), p.205-207

2013

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Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

Computer physics communications, 2010, Vol.181 (1), p.24-34

2010

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Quantum Corrections in the Monte Carlo Simulations of Scaled PHEMTs with Multiple Delta Doping

Journal of computational electronics, 2002-07, Vol.1 (1-2), p.257-261

2002

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Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate

ECS journal of solid state science and technology, 2017, Vol.6 (11), p.S3040-S3043

2017

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The Current Crowding Effect in ZnO Nanowires with a Metal Contact

Materials today : proceedings, 2015, Vol.2 (1), p.309-314

2015

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Monte Carlo Study of Ultimate Channel Scaling in Si and In Ga As Bulk MOSFETs

IEEE transactions on nanotechnology, 2011-11, Vol.10 (6), p.1424-1432

2011

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Influence of stress concentrators on the fatigue and fracture characteristics of steels and welded joints

Materials science (New York, N.Y.), 1998-09, Vol.34 (5), p.696-700

Kálna, K.

1998

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Phonon Confinement and Electron Capture Time in Quantum Well

Acta physica Polonica, A, 1997-10, Vol.92 (4), p.805-808

Kálna, K.

1997

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Scaling of pHEMTs to Decanano Dimensions

VLSI Design, 2001-01, Vol.2001 (1-4), p.435-439

2001

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Simulation Study of Performance for a 20-nm Gate Length In Ga As Implant Free Quantum Well MOSFET

IEEE transactions on nanotechnology, 2012-07, Vol.11 (4), p.808-817

2012

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Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes

Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors

The role of probe oxide in local surface conductivity measurements

Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts

The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model

Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO 2 interface charges and quantum mechanical effects

Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length

A study of the interface roughness effect in Si nanowires using a full 3D NEGF approach

Effect of interface state trap density on the performance of scaled surface channel In0.3Ga0.7 As MOSFETs

Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study

Electron transport process in quantum cascade intersubband semiconductor lasers

Simulation study of scaled In 0.53 Ga 0.47 As and Si FinFETs for sub-16 nm technology nodes

Impact of cross-section of 10.4 nm gate length Ino.53Gao.47As FinFETs on metal grain variability

Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In 0.53 Ga 0.47 As GAA MOSFET

Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

Quantum Corrections in the Monte Carlo Simulations of Scaled PHEMTs with Multiple Delta Doping

Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate

The Current Crowding Effect in ZnO Nanowires with a Metal Contact

Monte Carlo Study of Ultimate Channel Scaling in Si and In Ga As Bulk MOSFETs

Influence of stress concentrators on the fatigue and fracture characteristics of steels and welded joints

Phonon Confinement and Electron Capture Time in Quantum Well

Scaling of pHEMTs to Decanano Dimensions

Simulation Study of Performance for a 20-nm Gate Length In Ga As Implant Free Quantum Well MOSFET

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