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0.03-cc Super-thin HBT-MMIC Power Amplifier Module with Novel Polyimide Film Substrate for W-CDMA Mobile Handsets

2002 32nd European Microwave Conference, 2002, p.1-4

2002

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0.12 /spl mu/m raised gate/source/drain epitaxial channel NMOS technology

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.927-930

1998

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0.15-mu m buried-channel p-MOSFETs with ultrathin boron-dopedepitaxial Si layer

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.717-721

1998

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0.15-mu m RF CMOS technology compatible with logic CMOS forlow-voltage operation

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.737-742

1998

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0.15-/spl mu/m buried-channel p-MOSFETs with ultrathin boron-doped epitaxial Si layer

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.717-721

1998

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0.15-/spl mu/m RF CMOS technology compatible with logic CMOS for low-voltage operation

IEEE transactions on electron devices, 1998-03, Vol.45 (3), p.737-742

1998

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0.18- mu m CMOS for mixed digital and analog applications with zero-volt-V sub(th) epitaxial-channel MOSFET's

IEEE transactions on electron devices, 1999-01, Vol.46 (7), p.1378-1383

1999

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An 0.18-mu m CMOS for mixed digital and analog applications withzero-volt-V(th) epitaxial-channel MOSFETs

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1378-1383

1999

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An 0.18-/spl mu/m CMOS for mixed digital and analog applications with zero-volt-V/sub th/ epitaxial-channel MOSFETs

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1378-1383

1999

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0.18 /spl mu/m low voltage/low power RF CMOS with zero Vth analog MOSFETs made by undoped epitaxial channel technique

International Electron Devices Meeting. IEDM Technical Digest, 1997, p.837-840

1997

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An 0.18-μm CMOS for mixed digital and analog applications with zero-volt-V/sub th/ epitaxial-channel MOSFETs

IEEE transactions on electron devices, 1999-07, Vol.46 (7), p.1378-1383

1999

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0.2 mu m analog CMOS with very low noise figure at 2 GHz operation

Digest of technical papers - Symposium on VLSI Technology, 1996-01, p.132-133

1996

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0.2 /spl mu/m analog CMOS with very low noise figure at 2 GHz operation

1996 Symposium on VLSI Technology. Digest of Technical Papers, 1996, p.132-133

1996

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0.25 /spl mu/m salicide CMOS Technology Thermally Stable Up To 1,000/spl deg/C With High TDDB Reliability

1997 Symposium on VLSI Technology, 1997, p.101-102

1997

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0.3- mu m Si epitaxial base BiCMOS technology with 37-GHz f sub(max) and 10-V BV sub(ceo) for RF telecommunication

IEEE transactions on electron devices, 1999-01, Vol.46 (4), p.712-721

1999

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An 0.3-mu m Si epitaxial base BiCMOS technology with 37-GHzf(max) and 10-V BV(ceo) for RF telecommunication

IEEE transactions on electron devices, 1999-04, Vol.46 (4), p.712-721

1999

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0.3 /spl mu/m BiCMOS technology for mixed analog/digital application systems

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting, 1997, p.68-71

1997

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An 0.3-/spl mu/m Si epitaxial base BiCMOS technology with 37-GHz f/sub max/ and 10-V BV/sub ceo/ for RF telecommunication

IEEE transactions on electron devices, 1999-04, Vol.46 (4), p.712-721

1999

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An 0.3-μm Si epitaxial base BiCMOS technology with 37-GHz f/sub max/ and 10-V BV/sub ceo/ for RF telecommunication

IEEE transactions on electron devices, 1999-04, Vol.46 (4), p.712-721

1999

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0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode

Meeting abstracts (Electrochemical Society), 2008-08, Vol.MA2008-02 (25), p.1941-1941

2008

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0.5 /spl mu/m silicon bipolar transistor technology for analog applications

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 1994, p.213-216

1994

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0.8 µm Bi-CMOS technology with high fTion-implanted emitter bipolar transistor

1987 International Electron Devices Meeting, 1987, p.28-31

1987

Volltextzugriff (PDF)

009 Performance of a Mobile Single-Lead Electrocardiogram Technology for Atrial Fibrillation Screening in a Semi-Rural African Population: Insights from the Australian Led TEFF-AF Study

Heart, lung & circulation, 2020, Vol.29, p.S41-S41

2020

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0113 : Short-coupled polymorphic ventricular tachycardia at rest linked to a novel ryanodine receptor (RyR2) mutation: leaky RyR2 channels under non-stress conditions

Archives of Cardiovascular Diseases Supplements, 2015-04, Vol.7 (2), p.170-170

2015

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01aA06 Evaluation of GaN single crystal substrates grown by Na-flux method(NCCG-36)

Journal of the Japanese Association for Crystal Growth, 2006/11/01, Vol.33(4), pp.182

2006

Volltextzugriff (PDF)

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0.03-cc Super-thin HBT-MMIC Power Amplifier Module with Novel Polyimide Film Substrate for W-CDMA Mobile Handsets

0.12 /spl mu/m raised gate/source/drain epitaxial channel NMOS technology

0.15-mu m buried-channel p-MOSFETs with ultrathin boron-dopedepitaxial Si layer

0.15-mu m RF CMOS technology compatible with logic CMOS forlow-voltage operation

0.15-/spl mu/m buried-channel p-MOSFETs with ultrathin boron-doped epitaxial Si layer

0.15-/spl mu/m RF CMOS technology compatible with logic CMOS for low-voltage operation

0.18- mu m CMOS for mixed digital and analog applications with zero-volt-V sub(th) epitaxial-channel MOSFET's

An 0.18-mu m CMOS for mixed digital and analog applications withzero-volt-V(th) epitaxial-channel MOSFETs

An 0.18-/spl mu/m CMOS for mixed digital and analog applications with zero-volt-V/sub th/ epitaxial-channel MOSFETs

0.18 /spl mu/m low voltage/low power RF CMOS with zero Vth analog MOSFETs made by undoped epitaxial channel technique

An 0.18-μm CMOS for mixed digital and analog applications with zero-volt-V/sub th/ epitaxial-channel MOSFETs

0.2 mu m analog CMOS with very low noise figure at 2 GHz operation

0.2 /spl mu/m analog CMOS with very low noise figure at 2 GHz operation

0.25 /spl mu/m salicide CMOS Technology Thermally Stable Up To 1,000/spl deg/C With High TDDB Reliability

0.3- mu m Si epitaxial base BiCMOS technology with 37-GHz f sub(max) and 10-V BV sub(ceo) for RF telecommunication

An 0.3-mu m Si epitaxial base BiCMOS technology with 37-GHzf(max) and 10-V BV(ceo) for RF telecommunication

0.3 /spl mu/m BiCMOS technology for mixed analog/digital application systems

An 0.3-/spl mu/m Si epitaxial base BiCMOS technology with 37-GHz f/sub max/ and 10-V BV/sub ceo/ for RF telecommunication

An 0.3-μm Si epitaxial base BiCMOS technology with 37-GHz f/sub max/ and 10-V BV/sub ceo/ for RF telecommunication

0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode

0.5 /spl mu/m silicon bipolar transistor technology for analog applications

0.8 µm Bi-CMOS technology with high fTion-implanted emitter bipolar transistor

009 Performance of a Mobile Single-Lead Electrocardiogram Technology for Atrial Fibrillation Screening in a Semi-Rural African Population: Insights from the Australian Led TEFF-AF Study

0113 : Short-coupled polymorphic ventricular tachycardia at rest linked to a novel ryanodine receptor (RyR2) mutation: leaky RyR2 channels under non-stress conditions

01aA06 Evaluation of GaN single crystal substrates grown by Na-flux method(NCCG-36)

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