UB Paderborn / Katalog / Suche / in CDI

26 – 50 von 6.750

Sortiert nach

Antigen-Antibody Interaction-Based GaN HEMT Biosensor for C3G Detection

IEEE sensors journal, 2022-04, Vol.22 (7), p.6256-6262

2022

Link zum Volltext
IEEE_Xplore

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

IEEE electron device letters, 2008-10, Vol.29 (10), p.1098-1100

2008

Link zum Volltext
IEEE_Xplore

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

Link zum Volltext

Verfügbarkeit prüfen

Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AlN Pre-Layer

IEEE electron device letters, 2019-09, Vol.40 (9), p.1495-1498

2019

Link zum Volltext
IEEE_Xplore

Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

Link zum Volltext

Verfügbarkeit prüfen

AlGaN/GaN Schottky-Gate HEMTs With UV/O₃-Treated Gate Interface

IEEE electron device letters, 2020-10, Vol.41 (10), p.1488-1491

2020

Link zum Volltext
IEEE_Xplore

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

Link zum Volltext

Verfügbarkeit prüfen

Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

physica status solidi (b), 2020-12, Vol.257 (12), p.n/a

2020

Link zum Volltext

Verfügbarkeit prüfen

Asymmetric Bipolar Injection in a Schottky-Metal/ -GaN/AlGaN/GaN Device Under Forward Bias

IEEE electron device letters, , Vol.40 (9), p.1389-1392

Link zum Volltext
IEEE_Xplore

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

IEEE transactions on electron devices, , Vol.66 (6), p.2544-2550

Link zum Volltext
IEEE_Xplore

The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

IEEE sensors journal, 2020-08, Vol.20 (16), p.8947-8955

2020

Link zum Volltext
IEEE_Xplore

Comparative Study on Charge Trapping Induced } Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5343-5349

2018

Link zum Volltext
IEEE_Xplore

Fabrication of AlGaN High Frequency Bulk Acoustic Resonator by Reactive RF Magnetron Co-sputtering System

Materials, 2021-12, Vol.14 (23), p.7377

2021

Link zum Volltext

Verfügbarkeit prüfen

Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High- Dual MIS Structure

IEEE electron device letters, 2018-07, Vol.39 (7), p.995-998

2018

Link zum Volltext
IEEE_Xplore

0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer

2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2

2022

Link zum Volltext

Verfügbarkeit prüfen

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Physica status solidi. PSS-RRL. Rapid research letters, 2021-07, Vol.15 (7), p.n/a

2021

Link zum Volltext

Verfügbarkeit prüfen

A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

Journal of the Korean Physical Society, 2019, 74(4), , pp.349-357

2019

Link zum Volltext

Verfügbarkeit prüfen

High } and } / } Ratio Enhancement-Mode Buried -Channel GaN MOSFETs on -GaN Gate Power HEMT Platform

IEEE electron device letters, 2020-01, Vol.41 (1), p.26-29

2020

Link zum Volltext
IEEE_Xplore

Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4800-4806

2018

Link zum Volltext
IEEE_Xplore

AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

Link zum Volltext
IEEE_Xplore

Polarization Effect in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

IEEE journal of quantum electronics, , Vol.53 (1), p.1-6

Link zum Volltext
IEEE_Xplore

Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.876-882

2019

Link zum Volltext
IEEE_Xplore

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3848-3854

2018

Link zum Volltext

Verfügbarkeit prüfen

Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE open journal of nanotechnology, 2023, Vol.4, p.150-155

2023

Link zum Volltext

Verfügbarkeit prüfen

Progress on pure AlGaN based UVB LEDs and Our Approach Toward Deep-Ultraviolet (DUV) LDs

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

Link zum Volltext
IEEE_Xplore

26 – 50 von 6.750

Suche als RSS-Feed

Aktive Filter

ThemaEngineering

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(4.991)
Mit Volltextzugriff
(6.221)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

Englisch
(6.738)
Japanisch
(1.058)
Chinesisch
(16)
Koreanisch
(3)
Serbian
(1)
Deutsch
(1)
Schwedisch
(1)

2 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Gallium Nitrides
(3.819)
Science & Technology
(3.723)
Physical Sciences
(3.518)
Physics
(3.260)
Aluminum Gallium Nitrides
(3.259)
Physics, Applied
(2.534)
Materials Science
(1.793)
Aluminum Gallium Nitride
(1.666)
Technology
(1.571)
Gallium Nitride
(1.551)
Semiconductor Devices
(1.356)
Materials Science, Multidisciplinary
(1.313)
Aluminum Nitride
(1.268)
High Electron Mobility Transistors
(1.268)
Hemts
(1.231)
Substrates
(892)
Physics, Condensed Matter
(891)
Modfets
(806)
Heterostructures
(785)
Transistors
(753)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Applied Physics Letters
(842)
Journal Of Applied Physics
(435)
Japanese Journal Of Applied Physics
(281)
Physica Status Solidi. A, Applications And Materials Science
(244)
Journal Of Crystal Growth
(238)
Ieee Electron Device Letters
(201)
Physica Status Solidi. C
(195)
Electronics Letters
(159)
Physica Status Solidi
(129)
Aip Advances
(122)

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Antigen-Antibody Interaction-Based GaN HEMT Biosensor for C3G Detection

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AlN Pre-Layer

Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

AlGaN/GaN Schottky-Gate HEMTs With UV/O₃-Treated Gate Interface

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

Asymmetric Bipolar Injection in a Schottky-Metal/ -GaN/AlGaN/GaN Device Under Forward Bias

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors

Comparative Study on Charge Trapping Induced } Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

Fabrication of AlGaN High Frequency Bulk Acoustic Resonator by Reactive RF Magnetron Co-sputtering System

Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High- Dual MIS Structure

0.57% EQE and 4.2 mW Power of 232 nm AlGaN Far-DVC LED with Modulation Mg doped p-interlayer and Polarization Doped Transparent p-Contact Layer

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

High } and } / } Ratio Enhancement-Mode Buried -Channel GaN MOSFETs on -GaN Gate Power HEMT Platform

Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

AlGaN-based UV-B laser diode fabricated on AlN with 1 μm periodic concave and convex patterns

Polarization Effect in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

Progress on pure AlGaN based UVB LEDs and Our Approach Toward Deep-Ultraviolet (DUV) LDs

Aktive Filter

Suchergebnisse filtern