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Low-Loss, Extreme Subdiffraction Photon Confinement via Silicon Carbide Localized Surface Phonon Polariton Resonators

Nano letters, 2013-08, Vol.13 (8), p.3690-3697

2013

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Active tuning of surface phonon polariton resonances via carrier photoinjection

Nature photonics, 2018-01, Vol.12 (1), p.50-56

2018

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Phonon-Polaritonic Bowtie Nanoantennas: Controlling Infrared Thermal Radiation at the Nanoscale

ACS photonics, 2017-07, Vol.4 (7), p.1753-1760

2017

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Hybrid longitudinal-transverse phonon polaritons

Nature communications, 2019-04, Vol.10 (1), p.1682-1682, Article 1682

2019

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Spectral Tuning of Localized Surface Phonon Polariton Resonators for Low-Loss Mid-IR Applications

ACS photonics, 2014-08, Vol.1 (8), p.718-724

2014

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Enhanced Absorption with Graphene-Coated Silicon Carbide Nanowires for Mid-Infrared Nanophotonics

Nanomaterials (Basel, Switzerland), 2021-09, Vol.11 (9), p.2339

2021

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Launching and Manipulation of Higher‐Order In‐Plane Hyperbolic Phonon Polaritons in Low‐Dimensional Heterostructures

Advanced materials (Weinheim), 2023-06, Vol.35 (22), p.e2300301-n/a

2023

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Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide

Nano letters, 2024-01, Vol.24 (1), p.114-121

2024

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Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

Advanced functional materials, 2020-03, Vol.30 (10), p.n/a

2020

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Towards low- loss on-chip nanophotonics with coupled graphene and silicon carbide: a review

JPhys materials, 2020-07, Vol.3 (3), p.32005

2020

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Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers

Journal of electronic materials, 2011-04, Vol.40 (4), p.413-418

2011

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Aspect-ratio driven evolution of high-order resonant modes and near-field distributions in localized surface phonon polariton nanostructures

Scientific reports, 2016-09, Vol.6 (1), p.32959, Article 32959

2016

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Theoretical analysis of graphene plasmon cavities

Applied materials today, 2018-09, Vol.12, p.283-293

2018

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Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

Materials science forum, 2009-01, Vol.600-603, p.345-348

2009

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Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices

MRS proceedings, 2010-01, Vol.1246 (1), Article 1246-B04-06

2010

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Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes

Materials science forum, 2009, Vol.600-603, p.273-278

2009

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Dry Techniques for Epitaxial Graphene Transfer

MRS proceedings, 2010, Vol.1259 (1), Article 1259-S18-05

2010

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Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Materials science forum, 2012, Vol.717-720, p.1013-1016

2012

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Influence of Shockley stacking fault propagation and contraction on electrical behavior of 4H-SiC pin diodes and DMOSFETs

2007 International Semiconductor Device Research Symposium, 2007, p.1-2

2007

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Extended defects that affect carrier lifetime in high blocking voltage SiC epilayers

2011 International Semiconductor Device Research Symposium (ISDRS), 2011, p.1-2

2011

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Low-Loss, Extreme Subdiffraction Photon Confinement via Silicon Carbide Localized Surface Phonon Polariton Resonators

Active tuning of surface phonon polariton resonances via carrier photoinjection

Phonon-Polaritonic Bowtie Nanoantennas: Controlling Infrared Thermal Radiation at the Nanoscale

Hybrid longitudinal-transverse phonon polaritons

Spectral Tuning of Localized Surface Phonon Polariton Resonators for Low-Loss Mid-IR Applications

Enhanced Absorption with Graphene-Coated Silicon Carbide Nanowires for Mid-Infrared Nanophotonics

Launching and Manipulation of Higher‐Order In‐Plane Hyperbolic Phonon Polaritons in Low‐Dimensional Heterostructures

Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide

Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

Towards low- loss on-chip nanophotonics with coupled graphene and silicon carbide: a review

Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers

Aspect-ratio driven evolution of high-order resonant modes and near-field distributions in localized surface phonon polariton nanostructures

Theoretical analysis of graphene plasmon cavities

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices

Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes

Dry Techniques for Epitaxial Graphene Transfer

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Influence of Shockley stacking fault propagation and contraction on electrical behavior of 4H-SiC pin diodes and DMOSFETs

Extended defects that affect carrier lifetime in high blocking voltage SiC epilayers

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