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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Solar energy materials and solar cells, 2019-11, Vol.202, p.110153, Article 110153

2019

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

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Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

physica status solidi (b), 2021-11, Vol.258 (11), p.n/a

2021

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Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

physica status solidi (b), 2020-12, Vol.257 (12), p.n/a

2020

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Fabrication of AlGaN High Frequency Bulk Acoustic Resonator by Reactive RF Magnetron Co-sputtering System

Materials, 2021-12, Vol.14 (23), p.7377

2021

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Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Physica status solidi. PSS-RRL. Rapid research letters, 2021-07, Vol.15 (7), p.n/a

2021

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A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

Journal of the Korean Physical Society, 2019, 74(4), , pp.349-357

2019

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Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Thin solid films, 2015-08, Vol.589, p.194-198

2015

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Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Micromachines (Basel), 2024-01, Vol.15 (1), p.81

2024

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Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure

Thin solid films, 2015-09, Vol.590, p.335-339

2015

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Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2031-2033

2011

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The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Nature photonics, 2019-04, Vol.13 (4), p.233-244

2019

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GaN-based power devices: Physics, reliability, and perspectives

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

Nature photonics, 2016-09, Vol.10 (9), p.595-599

2016

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Deep traps in GaN-based structures as affecting the performance of GaN devices

Materials science & engineering. R, Reports : a review journal, 2015-08, Vol.94, p.1-56

2015

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Effect of gamma irradiation on GaN lateral Schottky barrier diodes

Journal of physics. Conference series, 2022-11, Vol.2370 (1), p.12014

2022

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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2404

2023

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Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

Applied physics letters, 2015-03, Vol.106 (13)

2015

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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

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Low temperature memory effects in AlGaN/GaN nanochannels

Applied physics letters, 2023-09, Vol.123 (10)

2023

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High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors

Applied physics letters, 2022-02, Vol.120 (9)

2022

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Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100209-1-100209-10

2014

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AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

Applied physics letters, 2018-01, Vol.112 (4)

2018

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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy

Optical Quality and Stimulated Emission of Molecular Beam Epitaxy Grown AlGaN in the Deep Ultraviolet

Fabrication of AlGaN High Frequency Bulk Acoustic Resonator by Reactive RF Magnetron Co-sputtering System

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Bufferless GaN‐Based MOSFETs Fabricated on GaN‐on‐Insulator Wafer

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

GaN-based power devices: Physics, reliability, and perspectives

Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

Deep traps in GaN-based structures as affecting the performance of GaN devices

Effect of gamma irradiation on GaN lateral Schottky barrier diodes

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Low temperature memory effects in AlGaN/GaN nanochannels

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

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