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Ferroelectric‐Gated HfZrO2/AlGaN/GaN High‐Electron‐Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter‐Wave Switch Applications

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (13), p.n/a

2024

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Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Applied physics letters, 2024-06, Vol.124 (24)

2024

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Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals

Journal of applied physics, 2024-05, Vol.135 (19)

2024

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High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Applied physics letters, 2024-05, Vol.124 (20)

2024

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Theoretical study of electron mobility in AlGaN back-barrier Al2O3/InAlN/GaN heterostructures under optical phonon scattering

Journal of applied physics, 2024-05, Vol.135 (17)

2024

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Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

Applied physics letters, 2024-04, Vol.124 (17)

2024

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An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

Applied physics letters, 2024-04, Vol.124 (16)

2024

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Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

Applied physics letters, 2024-04, Vol.124 (15)

2024

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The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111)

Micromachines (Basel), 2024-04, Vol.15 (4), p.536

2024

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High‐Temperature Annealing of Si‐Doped AlGaN

Physica status solidi. A, Applications and materials science, 2024-04, Vol.221 (7)

2024

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Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates

Applied physics letters, 2024-02, Vol.124 (6)

2024

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Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer

Applied physics letters, 2024-01, Vol.124 (1)

2024

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Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

Applied physics letters, 2023-12, Vol.123 (26)

2023

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Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content AlxGa1−xN/AlyGa1−yN asymmetrical heterostructure

Applied physics letters, 2023-12, Vol.123 (23)

2023

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Growth of SiC, AlN, and GaN Films on Silicon Parts of Arbitrary Geometry for Microelectromechanical Applications

Technical physics letters, 2023-12, Vol.49 (Suppl 4), p.S319-S322

2023

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Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)

Journal of applied physics, 2023-11, Vol.134 (18)

2023

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Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs

Applied physics letters, 2023-11, Vol.123 (20)

2023

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Ultrafast excitonic radiative recombination in Al-rich semipolar AlGaN quantum wells for far-UVC emitters

Applied physics letters, 2023-11, Vol.123 (20)

2023

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Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates

Japanese Journal of Applied Physics, 2023-11, Vol.62 (SN), p.SN1016

2023

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Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Journal of applied physics, 2023-10, Vol.134 (16)

2023

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Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures

Journal of applied physics, 2023-10, Vol.134 (15)

2023

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Thermal stability study of gallium nitride based magnetic field sensor

Journal of applied physics, 2023-10, Vol.134 (14)

2023

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High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer

Applied physics letters, 2023-10, Vol.123 (15)

2023

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Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure

Applied physics letters, 2023-10, Vol.123 (14)

2023

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Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes

Applied physics letters, 2023-09, Vol.123 (13)

2023

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Ferroelectric‐Gated HfZrO2/AlGaN/GaN High‐Electron‐Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter‐Wave Switch Applications

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals

High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Theoretical study of electron mobility in AlGaN back-barrier Al2O3/InAlN/GaN heterostructures under optical phonon scattering

Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111)

High‐Temperature Annealing of Si‐Doped AlGaN

Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates

Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer

Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors

Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content AlxGa1−xN/AlyGa1−yN asymmetrical heterostructure

Growth of SiC, AlN, and GaN Films on Silicon Parts of Arbitrary Geometry for Microelectromechanical Applications

Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)

Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs

Ultrafast excitonic radiative recombination in Al-rich semipolar AlGaN quantum wells for far-UVC emitters

Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates

Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures

Thermal stability study of gallium nitride based magnetic field sensor

High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer

Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure

Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes

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