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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Solar energy materials and solar cells, 2019-11, Vol.202, p.110153, Article 110153

2019

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

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Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Materials, 2024-07, Vol.17 (13), p.3343

2024

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Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Thin solid films, 2015-08, Vol.589, p.194-198

2015

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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials, 2019-05, Vol.12 (10), p.1599

2019

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2404

2023

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Ohmic contacts to Gallium Nitride materials

Applied surface science, 2016-10, Vol.383, p.324-345

2016

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Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Advanced materials (Weinheim), 2016-09, Vol.28 (33), p.7234-7242

2016

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Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Advanced functional materials, 2021-02, Vol.31 (8), p.n/a

2021

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Electron transport in 2DEG AlGaN/GaN, AlGaN/AlN/GaN and 3D GaN channels under a strong electric field

Applied physics. A, Materials science & processing, 2024-10, Vol.130 (10), Article 725

2024

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Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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UV-A to UV-B electroluminescence of core-shell GaN/AlGaN wire heterostructures

Applied physics letters, 2022-09, Vol.121 (13)

2022

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Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation

Journal of crystal growth, 2021-11, Vol.574, p.126324, Article 126324

2021

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Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas for High‐Quality Imaging

Advanced materials (Weinheim), 2024-09, Vol.36 (36), p.e2405874-n/a

2024

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Probing the Thermal and Electrical Properties of Ultrawide Bandgap Nitrogen‐Polar AlGaN Heterostructures

Advanced functional materials, 2024-09, Vol.34 (39), p.n/a

2024

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Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Nanoscale, 2014-08, Vol.6 (15), p.8671-8680

2014

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A Novel Approach to Enhance Bone Regeneration by Controlling the Polarity of GaN/AlGaN Heterostructures

Advanced functional materials, 2021-01, Vol.31 (5), p.n/a

2021

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Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (14)

2024

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Ferroelectric‐Gated HfZrO2/AlGaN/GaN High‐Electron‐Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter‐Wave Switch Applications

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (13), p.n/a

2024

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Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties-An Example of III-V Nitrides

Materials, 2024-08, Vol.17 (16), p.4022

2024

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Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Journal of crystal growth, 2018-10, Vol.500, p.1-4

2018

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Analysis of Mechanical Strain in AlGaN/GaN HFETs

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Journal of crystal growth, 2022-07, Vol.589, p.126673, Article 126673

2022

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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Ohmic contacts to Gallium Nitride materials

Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Electron transport in 2DEG AlGaN/GaN, AlGaN/AlN/GaN and 3D GaN channels under a strong electric field

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

UV-A to UV-B electroluminescence of core-shell GaN/AlGaN wire heterostructures

Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation

Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional Electron Gas for High‐Quality Imaging

Probing the Thermal and Electrical Properties of Ultrawide Bandgap Nitrogen‐Polar AlGaN Heterostructures

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

A Novel Approach to Enhance Bone Regeneration by Controlling the Polarity of GaN/AlGaN Heterostructures

Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier

Ferroelectric‐Gated HfZrO2/AlGaN/GaN High‐Electron‐Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter‐Wave Switch Applications

Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties-An Example of III-V Nitrides

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Analysis of Mechanical Strain in AlGaN/GaN HFETs

Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

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