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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Nanomaterials (Basel, Switzerland), 2023-08, Vol.13 (17), p.2404

2023

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A GaN–SiC hybrid material for high-frequency and power electronics

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Applied physics letters, 2017-08, Vol.111 (9)

2017

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Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure

Applied physics letters, 2023-10, Vol.123 (14)

2023

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Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors

Applied physics letters, 2020-07, Vol.117 (4)

2020

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Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate

Journal of applied physics, 2023-04, Vol.133 (14)

2023

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High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Applied physics letters, 2023-04, Vol.122 (14)

2023

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Alloy segregation at stacking faults in zincblende GaN heterostructures

Journal of applied physics, 2020-10, Vol.128 (14)

2020

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Compositional degradation of the electron blocking layers through solid-solution in GaN-based laser diodes

Journal of applied physics, 2022-10, Vol.132 (14)

2022

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UV-A to UV-B electroluminescence of core-shell GaN/AlGaN wire heterostructures

Applied physics letters, 2022-09, Vol.121 (13)

2022

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AlGaN/GaN MISHEMTs with epitaxially grown GdScO3 as high-κ dielectric

Applied physics letters, 2021-02, Vol.118 (5)

2021

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Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

Applied physics letters, 2014-01, Vol.104 (2)

2014

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Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si

Journal of applied physics, 2019-06, Vol.125 (23)

2019

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Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions

Applied physics letters, 2020-05, Vol.116 (20)

2020

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Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Applied physics letters, 2014-10, Vol.105 (14)

2014

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Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates

Applied physics letters, 2023-01, Vol.122 (1)

2023

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Impact of n-GaN cap layer doping on the gate leakage behavior in AlGaN/GaN HEMTs grown on Si and GaN substrates

Journal of applied physics, 2020-06, Vol.127 (23)

2020

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Depth profiling of AlN and AlxGa1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source

Journal of applied physics, 2023-01, Vol.133 (3)

2023

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Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (3), p.n/a

2021

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Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates

Applied physics letters, 2024-02, Vol.124 (6)

2024

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Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates

Journal of crystal growth, 2022-06, Vol.588, p.126669, Article 126669

2022

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Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures

Physica status solidi. A, Applications and materials science, 2023-09, Vol.220 (18), p.n/a

2023

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High‐Temperature Annealing of Si‐Doped AlGaN

Physica status solidi. A, Applications and materials science, 2024-04, Vol.221 (7)

2024

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

A GaN–SiC hybrid material for high-frequency and power electronics

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure

Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors

Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Alloy segregation at stacking faults in zincblende GaN heterostructures

Compositional degradation of the electron blocking layers through solid-solution in GaN-based laser diodes

UV-A to UV-B electroluminescence of core-shell GaN/AlGaN wire heterostructures

AlGaN/GaN MISHEMTs with epitaxially grown GdScO3 as high-κ dielectric

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si

Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates

Impact of n-GaN cap layer doping on the gate leakage behavior in AlGaN/GaN HEMTs grown on Si and GaN substrates

Depth profiling of AlN and AlxGa1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source

Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures

Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates

Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates

Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures

High‐Temperature Annealing of Si‐Doped AlGaN

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