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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Advanced materials (Weinheim), 2016-09, Vol.28 (33), p.7234-7242

2016

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Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Advanced functional materials, 2021-02, Vol.31 (8), p.n/a

2021

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A Novel Approach to Enhance Bone Regeneration by Controlling the Polarity of GaN/AlGaN Heterostructures

Advanced functional materials, 2021-01, Vol.31 (5), p.n/a

2021

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Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Ferroelectric‐Gated HfZrO2/AlGaN/GaN High‐Electron‐Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter‐Wave Switch Applications

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (13), p.n/a

2024

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Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier

Physica status solidi. A, Applications and materials science, 2024-07, Vol.221 (14)

2024

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Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (3), p.n/a

2021

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Multichannel AlGaN/GaN Schottky Barrier Diode with Low Turn‐On Voltage and On‐Resistance

Physica status solidi. A, Applications and materials science, 2022-07, Vol.219 (13), p.n/a

2022

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Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Analysis of Mechanical Strain in AlGaN/GaN HFETs

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures

Physica status solidi. A, Applications and materials science, 2023-09, Vol.220 (18), p.n/a

2023

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High‐Temperature Annealing of Si‐Doped AlGaN

Physica status solidi. A, Applications and materials science, 2024-04, Vol.221 (7)

2024

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Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8)

2023

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The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Transformation in Low‐Frequency Noise Spectra in GaN High‐Electron‐Mobility Transistors in Nonequilibrium Conditions

Physica status solidi. A, Applications and materials science, 2023-01, Vol.220 (2), p.n/a

2023

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Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Ohmic contacts to Al‐rich AlGaN heterostructures

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8), p.1600842-n/a

2017

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Effect of the GaN:Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10), p.n/a

2018

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Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Ferroelectric Polarization Switching Behavior of Hf0.5Zr0.5O2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

A Novel Approach to Enhance Bone Regeneration by Controlling the Polarity of GaN/AlGaN Heterostructures

Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates

Ferroelectric‐Gated HfZrO2/AlGaN/GaN High‐Electron‐Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter‐Wave Switch Applications

Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier

Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures

Multichannel AlGaN/GaN Schottky Barrier Diode with Low Turn‐On Voltage and On‐Resistance

Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field

Analysis of Mechanical Strain in AlGaN/GaN HFETs

Influence of External Plane Stress on Electric Parameters of AlGaN/GaN HEMT Heterostructures

High‐Temperature Annealing of Si‐Doped AlGaN

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications

Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

Transformation in Low‐Frequency Noise Spectra in GaN High‐Electron‐Mobility Transistors in Nonequilibrium Conditions

Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

Ohmic contacts to Al‐rich AlGaN heterostructures

Effect of the GaN:Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs

Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors

Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

Ferroelectric Polarization Switching Behavior of Hf0.5Zr0.5O2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures

Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures

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