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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Solar energy materials and solar cells, 2019-11, Vol.202, p.110153, Article 110153

2019

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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Journal of crystal growth, 2018-10, Vol.499, p.40-46

2018

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Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Thin solid films, 2015-08, Vol.589, p.194-198

2015

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Ohmic contacts to Gallium Nitride materials

Applied surface science, 2016-10, Vol.383, p.324-345

2016

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Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation

Journal of crystal growth, 2021-11, Vol.574, p.126324, Article 126324

2021

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Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Journal of crystal growth, 2022-07, Vol.589, p.126673, Article 126673

2022

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Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Journal of crystal growth, 2018-10, Vol.500, p.1-4

2018

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Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates

Journal of crystal growth, 2022-06, Vol.588, p.126669, Article 126669

2022

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GaN and AlGaN/GaN heterostructures grown on two dimensional BN templates

Journal of crystal growth, 2017-04, Vol.464, p.168-174

2017

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Optical properties of AlGaN/GaN epitaxial layers grown on different face GaN substrates

Materials letters, 2020-03, Vol.263, p.127229, Article 127229

2020

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AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

Journal of crystal growth, 2020-02, Vol.531, p.125343, Article 125343

2020

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Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition

Thin solid films, 2022-07, Vol.754, p.139295, Article 139295

2022

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High temperature ammonia MBE—Real way to improve crystal quality of nitride heterostructures

Journal of crystal growth, 2019-05, Vol.514, p.40-44

2019

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Improvement of electrical characteristics in regrown AlGaN/GaN MOSFETs by suppression of the residual interface charge

Journal of crystal growth, 2019-03, Vol.509, p.129-132

2019

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Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates

Journal of crystal growth, 2015-03, Vol.414, p.248-253

2015

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Raman spectroscopy of graphene on AlGaN/GaN heterostructures

Thin solid films, 2015-12, Vol.597, p.140-143

2015

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Growth of AlGaN alloys under excess group III conditions: Formation of vertical nanorods

Journal of crystal growth, 2018-01, Vol.481, p.40-47

2018

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Dependence of offset voltage in AlGaN/GaN van der Pauw devices under mechanical strain

Materials letters, 2019-06, Vol.244, p.66-69

2019

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Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure

Vacuum, 2013-01, Vol.87, p.150-154

2013

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Electrical properties of GaN-based heterostructures adopting InAlN/AlGaN bilayer barriers

Journal of crystal growth, 2016-08, Vol.447, p.1-4

2016

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A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times

Applied surface science, 2014-09, Vol.312, p.68-73

2014

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Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

Applied surface science, 2014-09, Vol.312, p.102-106

2014

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Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate

Journal of crystal growth, 2014-06, Vol.395, p.5-8

2014

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AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications

Thin solid films, 2011-10, Vol.520 (1), p.491-496

2011

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Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD

Current Applied Physics, 2012, 12(6), , pp.1600-1605

2012

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Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE

Micron thick Gd2O3 films for GaN/AlGaN metal–oxide–semiconductor heterostructures

Ohmic contacts to Gallium Nitride materials

Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation

Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates

GaN and AlGaN/GaN heterostructures grown on two dimensional BN templates

Optical properties of AlGaN/GaN epitaxial layers grown on different face GaN substrates

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition

High temperature ammonia MBE—Real way to improve crystal quality of nitride heterostructures

Improvement of electrical characteristics in regrown AlGaN/GaN MOSFETs by suppression of the residual interface charge

Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates

Raman spectroscopy of graphene on AlGaN/GaN heterostructures

Growth of AlGaN alloys under excess group III conditions: Formation of vertical nanorods

Dependence of offset voltage in AlGaN/GaN van der Pauw devices under mechanical strain

Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure

Electrical properties of GaN-based heterostructures adopting InAlN/AlGaN bilayer barriers

A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate

AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications

Investigation of AlInN HEMT structures with different AlGaN buffer layers grown on sapphire substrates by MOCVD

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