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Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Applied physics letters, 2022-02, Vol.120 (8)

2022

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TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

IEEE electron device letters, 2008-10, Vol.29 (10), p.1098-1100

2008

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Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Applied physics letters, 2009-07, Vol.95 (3), p.033510-033510-3

2009

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Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors

2011 International Reliability Physics Symposium, 2011, p.4E.3.1-4E.3.4

2011

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Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

ECS transactions, 2023-09, Vol.112 (2), p.9-20

2023

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Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23)

2010

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Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2012-04, Vol.100 (17), p.172109-172109-3

2012

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Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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Application reliability validation of GaN power devices

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.20.5.1-20.5.4

2016

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Traps and defects in pre- and post- stressed AlGaN-GaN high electron mobility transistors

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1611-1613

2011

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Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

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Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23), p.233509-233509-3

2010

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RF power degradation of GaN High Electron Mobility Transistors

2010 International Electron Devices Meeting, 2010, p.20.2.1-20.2.4

2010

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Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

Meeting abstracts (Electrochemical Society), 2023-12, Vol.MA2023-02 (32), p.1575-1575

2023

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Glitch Recall: A Hardware Trojan Exploiting Natural Glitches in Logic Circuits

Information Security Applications, 2018, Vol.10763, p.150-161

2018

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Physics of electrical degradation in gallium nitride high electron mobility transistors

Joh, Jungwoo

2009

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Buildability and Mechanical Properties of 3D Printed Concrete

Materials, 2020-11, Vol.13 (21), p.4919

2020

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Interlayer Strength of 3D-Printed Mortar Reinforced by Postinstalled Reinforcement

Materials, 2021-11, Vol.14 (21), p.6630

2021

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Torsional Behavior of High-Strength Concrete Beams with Minimum Reinforcement Ratio

Advances in civil engineering, 2019-01, Vol.2019 (2019), p.1-11

2019

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Measurements of Tensile Stress and Cross Sectional Area Loss of Tendon by Means of Non-contact Movable Yoke

Journal of the Korean Magnetics Society, 2017-10, Vol.27 (5), p.168-174

2017

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Tensile Stress Measurement of Tendon with Wiedemann Effect

Journal of the Korean Magnetics Society, 2016-08, Vol.26 (4), p.133-136

2016

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Tensile Stress Measurement of Tendon by Means of Non-contact Yoke Method

Journal of the Korean Magnetics Society, 2016-02, Vol.26 (1), p.19-23

2016

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Flexural Bond Behavior of Rebar in Ultra-High Performance Concrete Beams Considering Lap-Splice Length and Cover Depth

Engineering (Irvine, Calif.), 2016, Vol.8 (3), p.116-129

2016

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Changes of Hysteresis Loop Characteristics of the Tendon Under Tensile Stress

Journal of the Korean Magnetics Society, 2015-08, Vol.25 (4), p.123-128

2015

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Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors

Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

Application reliability validation of GaN power devices

Traps and defects in pre- and post- stressed AlGaN-GaN high electron mobility transistors

Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

RF power degradation of GaN High Electron Mobility Transistors

Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

Glitch Recall: A Hardware Trojan Exploiting Natural Glitches in Logic Circuits

Physics of electrical degradation in gallium nitride high electron mobility transistors

Buildability and Mechanical Properties of 3D Printed Concrete

Interlayer Strength of 3D-Printed Mortar Reinforced by Postinstalled Reinforcement

Torsional Behavior of High-Strength Concrete Beams with Minimum Reinforcement Ratio

Measurements of Tensile Stress and Cross Sectional Area Loss of Tendon by Means of Non-contact Movable Yoke

Tensile Stress Measurement of Tendon with Wiedemann Effect

Tensile Stress Measurement of Tendon by Means of Non-contact Yoke Method

Flexural Bond Behavior of Rebar in Ultra-High Performance Concrete Beams Considering Lap-Splice Length and Cover Depth

Changes of Hysteresis Loop Characteristics of the Tendon Under Tensile Stress

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