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A world's first product of three-dimensional vertical NAND Flash memory and beyond

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS), 2014, p.1-5

2014

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7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate

2015 IEEE International Solid State Circuits Conference (ISSCC), 2015, p.1-3

2015

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7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip

2015 IEEE International Solid State Circuits Conference (ISSCC), 2015, p.1-3

2015

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Dual-gate shorted anode SOI lateral insulated gate bipolar transistor suppressing the snap-back

Japanese Journal of Applied Physics, 1997-03, Vol.36 (3B), p.1663-1666

1997

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A trench-gate silicon-on-insulator lateral insulated gate bipolar transistor with the p+ cathode well

Japanese Journal of Applied Physics, 1995-02, Vol.34 (2B), p.854-859

1995

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A New Lateral Dual-Gate Thyristor with Current Saturation

Japanese Journal of Applied Physics, 2000-04, Vol.39 (4S), p.1979

2000

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A 1.2V 1.33Gb/s/pin 8Tb NAND flash memory multi-chip package employing F-chip for low power and high performance storage applications

2017 Symposium on VLSI Circuits, 2017, p.C194-C195

2017

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A 1.8 V 1 Gb NAND flash memory with 0.12 mu m STI process technology

Digest of technical papers - IEEE International Solid-State Circuits Conference, 2002-01, p.80-81+410

2002

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A lateral trench-MOS bipolar-mode FET on silicon-on-insulator

Physica scripta, 1999-01, Vol.1999 (1), p.307

1999

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The maximum controllable current of emitter switched thyristors employing the segmented p-base

Physica scripta, 1999-01, Vol.1999 (1), p.294

1999

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Disturbance-suppressed ReRAM write algorithm for high-capacity and high-performance memory

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS), 2014, p.1-4

2014

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30.3 A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface

2021 IEEE International Solid- State Circuits Conference (ISSCC), 2021, Vol.64, p.426-428

2021

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13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate

2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, p.218-220

2020

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13.4 A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface

2019 IEEE International Solid- State Circuits Conference - (ISSCC), 2019, p.216-218

2019

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A fast-switching SOI SA-LIGBT without NDR region

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2000, p.149-152

2000

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11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory

2017 IEEE International Solid-State Circuits Conference (ISSCC), 2017, p.202-203

2017

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7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers

2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016, p.130-131

2016

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7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate

2016 IEEE International Solid-State Circuits Conference (ISSCC), 2016, p.138-139

2016

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19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming

2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014, p.334-335

2014

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The experimental study on the temperature characteristics of the BRT and the EST

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400), 2000, Vol.2, p.645-648 vol.2

2000

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High-performance 1-Gb-NAND flash memory with 0.12-mum technology

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1502-1509

2002

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High-performance 1-Gb-NAND flash memory with 0.12-/spl mu/m technology

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1502-1509

2002

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High-performance 1-Gb-NAND flash memory with 0.12-[micro]m technology

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1502

2002

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Analytical solution of the breakdown voltage for 6 H -silicon carbide p + n junction

Journal of applied physics, 1996-03, Vol.79 (5), p.2796-2797

1996

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Optimum design of the field plate in the cylindrical p super(+)n junction: Analytical approach

Solid-state electronics, 1998-09, Vol.42 (9), p.1651-1655

1998

Volltextzugriff (PDF)

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A world's first product of three-dimensional vertical NAND Flash memory and beyond

7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate

7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip

Dual-gate shorted anode SOI lateral insulated gate bipolar transistor suppressing the snap-back

A trench-gate silicon-on-insulator lateral insulated gate bipolar transistor with the p+ cathode well

A New Lateral Dual-Gate Thyristor with Current Saturation

A 1.2V 1.33Gb/s/pin 8Tb NAND flash memory multi-chip package employing F-chip for low power and high performance storage applications

A 1.8 V 1 Gb NAND flash memory with 0.12 mu m STI process technology

A lateral trench-MOS bipolar-mode FET on silicon-on-insulator

The maximum controllable current of emitter switched thyristors employing the segmented p-base

Disturbance-suppressed ReRAM write algorithm for high-capacity and high-performance memory

30.3 A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate

13.4 A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface

A fast-switching SOI SA-LIGBT without NDR region

11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers

7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate

19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming

The experimental study on the temperature characteristics of the BRT and the EST

High-performance 1-Gb-NAND flash memory with 0.12-mum technology

High-performance 1-Gb-NAND flash memory with 0.12-/spl mu/m technology

High-performance 1-Gb-NAND flash memory with 0.12-[micro]m technology

Analytical solution of the breakdown voltage for 6 H -silicon carbide p + n junction

Optimum design of the field plate in the cylindrical p super(+)n junction: Analytical approach

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