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Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

Journal of applied physics, 2019-11, Vol.126 (18)

2019

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(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell

Applied physics letters, 2024-11, Vol.125 (19)

2024

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Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer

Materials, 2022-12, Vol.15 (24), p.8945

2022

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Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure

Applied physics letters, 2023-09, Vol.123 (12)

2023

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Critical spatial disorder in InGaN resonant Bragg structures

Applied physics letters, 2022-07, Vol.121 (4)

2022

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Stress-dislocation management in MOVPE of GaN on SiC wafers

Physica status solidi. A, Applications and materials science, 2016-10, Vol.213 (10), p.2759-2763

2016

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AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

Materials, 2023-06, Vol.16 (12), p.4265

2023

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Stress Analysis of GaN-Based Heterostructures on Silicon Substrates

Semiconductors (Woodbury, N.Y.), 2024-02, Vol.58 (2), p.99-102

2024

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Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells

Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (Suppl 1), p.S49-S53

2021

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Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12202

2021

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Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells

Journal of applied physics, 2017-04, Vol.121 (13)

2017

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Determination of hole diffusion length in n-GaN

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12075

2021

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Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (14), p.1900-1903

2019

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Optical reflection spectra of resonant photonic structures based on a system of 100 InGaN quantum wells

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12153

2020

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Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12147

2021

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A GaN/AlGaN Resonance Bragg Structure

Bulletin of the Russian Academy of Sciences. Physics, 2023-06, Vol.87 (6), p.782-785

2023

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Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

Physica status solidi. A, Applications and materials science, 2016-01, Vol.213 (1), p.19-29

2016

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Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12206

2020

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Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

Journal of physics. Conference series, 2019-11, Vol.1400 (7), p.77009

2019

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Study of silicon nitride deposition in III-N MOVPE reactors

Journal of crystal growth, 2020-12, Vol.551, p.125906, Article 125906

2020

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Critical Disorder in InGaN/GaN Resonant Bragg Structures

Bulletin of the Russian Academy of Sciences. Physics, 2023-06, Vol.87 (6), p.853-856

2023

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Investigation of Statistical Broadening in InGaN Alloys

Journal of physics. Conference series, 2018-12, Vol.1135 (1), p.12050

2018

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Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts

Semiconductor science and technology, 2018-01, Vol.33 (2)

2018

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Phonons in short-period (GaN)m(AlN)n superlattices: ab initio calculations and group-theoretical analysis of modes and their genesis

Journal of physics. Conference series, 2019-11, Vol.1400 (6), p.66016

2019

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Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (14), p.1843-1845

2018

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Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer

Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure

Critical spatial disorder in InGaN resonant Bragg structures

Stress-dislocation management in MOVPE of GaN on SiC wafers

AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

Stress Analysis of GaN-Based Heterostructures on Silicon Substrates

Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells

Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells

Determination of hole diffusion length in n-GaN

Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells

Optical reflection spectra of resonant photonic structures based on a system of 100 InGaN quantum wells

Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data

A GaN/AlGaN Resonance Bragg Structure

Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

Study of silicon nitride deposition in III-N MOVPE reactors

Critical Disorder in InGaN/GaN Resonant Bragg Structures

Investigation of Statistical Broadening in InGaN Alloys

Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts

Phonons in short-period (GaN)m(AlN)n superlattices: ab initio calculations and group-theoretical analysis of modes and their genesis

Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs

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