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Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses

Nature communications, 2016-09, Vol.7 (1), p.12611-12611, Article 12611

2016

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Multibit memory operation of metal-oxide bi-layer memristors

Scientific reports, 2017-12, Vol.7 (1), p.17532-7, Article 17532

2017

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Challenges hindering memristive neuromorphic hardware from going mainstream

Nature communications, 2018-12, Vol.9 (1), p.5267-4, Article 5267

2018

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Memristive synapses connect brain and silicon spiking neurons

Scientific reports, 2020-02, Vol.10 (1), p.2590-2590, Article 2590

2020

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Real-time encoding and compression of neuronal spikes by metal-oxide memristors

Nature communications, 2016-09, Vol.7 (1), p.12805-12805, Article 12805

2016

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Seamlessly fused digital-analogue reconfigurable computing using memristors

Nature communications, 2018-06, Vol.9 (1), p.2170-7, Article 2170

2018

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Impact of ultra-thin Al2O3– y layers on TiO2– x ReRAM switching characteristics

Journal of applied physics, 2017-05, Vol.121 (18)

2017

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Investigation of the Switching Mechanism in TiO2‑Based RRAM: A Two-Dimensional EDX Approach

ACS applied materials & interfaces, 2016-08, Vol.8 (30), p.19605-19611

2016

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Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates

Nanotechnology, 2016-12, Vol.28 (2)

2016

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On the origin of resistive switching volatility in Ni/TiO2/Ni stacks

Journal of applied physics, 2016-08, Vol.120 (6)

2016

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Engineering the switching dynamics of TiOx-based RRAM with Al doping

Journal of applied physics, 2016-07, Vol.120 (2)

2016

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An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin

Applied physics letters, 2016-01, Vol.108 (3)

2016

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Author Correction: Memristive synapses connect brain and silicon spiking neurons

Scientific reports, 2020-06, Vol.10 (1), p.9584-9584, Article 9584

2020

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High Density Crossbar Arrays with Sub- 15 nm Single Cells via Liftoff Process Only

Scientific reports, 2016-09, Vol.6 (1), p.32614-32614, Article 32614

2016

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A Data-Driven Verilog-A ReRAM Model

IEEE transactions on computer-aided design of integrated circuits and systems, 2018-12, Vol.37 (12), p.3151-3162

2018

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An Electrical Characterisation Methodology for Benchmarking Memristive Device Technologies

Scientific reports, 2019-12, Vol.9 (1), p.19412-10, Article 19412

2019

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Emulating short-term synaptic dynamics with memristive devices

Scientific reports, 2016-01, Vol.6 (1), p.18639-18639, Article 18639

2016

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A \mu -Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays

IEEE transactions on electron devices, 2015-07, Vol.62 (7), p.2190-2196

2015

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A Memristive Switching Uncertainty Model

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.2946-2953

2019

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Practical Implementation of Memristor-Based Threshold Logic Gates

IEEE transactions on circuits and systems. I, Regular papers, 2019-08, Vol.66 (8), p.3041-3051

2019

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Memory Impedance in TiO2 based Metal-Insulator-Metal Devices

Scientific reports, 2014-03, Vol.4 (1), p.4522-4522, Article 4522

2014

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Resistive switching of Pt/TiO x /Pt devices fabricated on flexible Parylene-C substrates

Nanotechnology, 2017-01, Vol.28 (2), p.025303-025303

2017

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Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOₓ-Based Memristors-Part I: Behavioral Model

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4877-4884

2021

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Bidirectional Volatile Signatures of Metal-Oxide Memristors-Part I: Characterization

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.5158-5165

2020

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Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO ₓ -Based Memristors—Part I: Behavioral Model

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4877-4884

2021

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Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses

Multibit memory operation of metal-oxide bi-layer memristors

Challenges hindering memristive neuromorphic hardware from going mainstream

Memristive synapses connect brain and silicon spiking neurons

Real-time encoding and compression of neuronal spikes by metal-oxide memristors

Seamlessly fused digital-analogue reconfigurable computing using memristors

Impact of ultra-thin Al2O3– y layers on TiO2– x ReRAM switching characteristics

Investigation of the Switching Mechanism in TiO2‑Based RRAM: A Two-Dimensional EDX Approach

Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates

On the origin of resistive switching volatility in Ni/TiO2/Ni stacks

Engineering the switching dynamics of TiOx-based RRAM with Al doping

An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin

Author Correction: Memristive synapses connect brain and silicon spiking neurons

High Density Crossbar Arrays with Sub- 15 nm Single Cells via Liftoff Process Only

A Data-Driven Verilog-A ReRAM Model

An Electrical Characterisation Methodology for Benchmarking Memristive Device Technologies

Emulating short-term synaptic dynamics with memristive devices

A \mu -Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays

A Memristive Switching Uncertainty Model

Practical Implementation of Memristor-Based Threshold Logic Gates

Memory Impedance in TiO2 based Metal-Insulator-Metal Devices

Resistive switching of Pt/TiO x /Pt devices fabricated on flexible Parylene-C substrates

Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOₓ-Based Memristors-Part I: Behavioral Model

Bidirectional Volatile Signatures of Metal-Oxide Memristors-Part I: Characterization

Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO ₓ -Based Memristors—Part I: Behavioral Model

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