UB Paderborn / Katalog / Suche / in CDI

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-11, Vol.27 (6), p.2472-2479

2009

Link zum Volltext

Verfügbarkeit prüfen

Threshold voltage control in NiSi-gated MOSFETs through SIIS

IEEE transactions on electron devices, 2005-01, Vol.52 (1), p.39-46

2005

Link zum Volltext
IEEE_Xplore

FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics : CIRCUIT TECHNOLOGY FOR ULTRA-LOW POWER (ULP)

Proceedings of the IEEE, 2010, Vol.98 (2), p.333-342

2010

Link zum Volltext

Verfügbarkeit prüfen

Fabrication of metal gated FinFETs through complete gate silicidation with Ni

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2115-2120

2004

Link zum Volltext
IEEE_Xplore

Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel

IEEE electron device letters, 2000-04, Vol.21 (4), p.161-163

2000

Link zum Volltext
IEEE_Xplore

Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel

IEEE transactions on electron devices, 2002-02, Vol.49 (2), p.279-286

2002

Link zum Volltext
IEEE_Xplore

Novel method for silicon quantum wire transistor fabrication

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-11, Vol.17 (6), p.3244-3247

1999

Link zum Volltext

Verfügbarkeit prüfen

Epitaxial graphene transistors on SiC substrates

2008 Device Research Conference, 2008, p.25-26

2008

Link zum Volltext
IEEE_Xplore

Moore's law lives on [CMOS transistors]

IEEE circuits and devices magazine, 2003-01, Vol.19 (1), p.35-42

2003

Link zum Volltext
IEEE_Xplore

1 – 25 von 44

Suche als RSS-Feed

Aktive Filter

ThemaDevices

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(33)
Mit Volltextzugriff
(39)

Publikationsform

Sprache

Englisch
(43)
Japanisch
(8)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

A glucose fuel cell for implantable brain-machine interfaces

Multilayer microhydraulic actuators with speed and force configurations

Silicon Device Scaling to the Sub-10-nm Regime

Low voltage electrowetting using thin fluoroploymer films

Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold Operation

Engineering polycrystalline Ni films to improve thickness uniformity of the chemical-vapor-deposition-grown graphene films

Irreversible Electrowetting on Thin Fluoropolymer Films

Engineering the Electrocapillary Behavior of Electrolyte Droplets on Thin Fluoropolymer Films

Cyclic Compression and Decompression of a Lipid Bilayer

Electrical conductance across self-assembled lipid bilayers

Low-voltage electrowetting on a lipid bilayer formed on hafnium oxide

Validation of the trapped charge model of electrowetting contact angle saturation on lipid bilayers

Publisher's Note: "Low-voltage electrowetting on a lipid bilayer formed on hafnium oxide" [ Appl. Phys. Lett. 99, 024105 (2011) ]

FinFET design considerations based on 3-D simulation and analytical modeling

Re-engineering artificial muscle with microhydraulics

Extension and source/drain design for high-performance FinFET devices

High density plasma etching of titanium nitride metal gate electrodes for fully depleted silicon-on-insulator subthreshold transistor integration

Threshold voltage control in NiSi-gated MOSFETs through SIIS

FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics : CIRCUIT TECHNOLOGY FOR ULTRA-LOW POWER (ULP)

Fabrication of metal gated FinFETs through complete gate silicidation with Ni

Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel

Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel

Novel method for silicon quantum wire transistor fabrication

Epitaxial graphene transistors on SiC substrates

Moore's law lives on [CMOS transistors]

Aktive Filter

Suchergebnisse filtern