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Recovery of the NBTI-Stressed Ultrathin Gate p-MOSFET: The Role of Deep-Level Hole Traps

IEEE electron device letters, 2006-11, Vol.27 (11), p.914-916

2006

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IEEE_Xplore

Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET

IEEE electron device letters, 2006-09, Vol.27 (9), p.755-758

2006

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IEEE_Xplore

Effect of Hole-Trap Distribution on the Power-Law Time Exponent of NBTI

IEEE electron device letters, 2009-07, Vol.30 (7), p.751-753

2009

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IEEE_Xplore

Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron

IEEE electron device letters, 2008-08, Vol.29 (8), p.934-937

2008

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IEEE_Xplore

Generation-recombination noise in the near fully depleted SIMOX SOI n-MOSFET - physical characteristics and modeling

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2490-2498

2003

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IEEE_Xplore

Evidence for a composite interface State generation mode in the CHE-stressed deep-submicrometer n-MOSFET

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2246-2248

2004

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IEEE_Xplore

A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: device characterization and damage assessment

IEEE transactions on electron devices, 2002-12, Vol.49 (12), p.2254-2262

2002

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IEEE_Xplore

Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region

IEEE electron device letters, 2001-11, Vol.22 (11), p.545-547

2001

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IEEE_Xplore

Characterization of leakage current in thin gate oxide subjected to 10 keV X-ray irradiation

IEEE transactions on electron devices, 2000-03, Vol.47 (3), p.650-652

2000

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IEEE_Xplore

The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFETs

IEEE transactions on electron devices, 1999-04, Vol.46 (4), p.738-746

1999

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IEEE_Xplore

Evolution of oxide charge trapping under bias temperature stressing

Microelectronics and reliability, 2014-04, Vol.54 (4), p.663-681

2014

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On the dynamic NBTI of the HfO 2 and HfSiON P–MOSFET

Microelectronic engineering, 2011, Vol.88 (7), p.1392-1395

2011

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On the dynamic NBTI of the HfO2 and HfSiON P-MOSFET

Microelectronic engineering, 2011-07, Vol.88 (7), p.1392-1395

2011

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Bilayer gate dielectric study by scanning tunneling microscopy

Applied physics letters, 2007-09, Vol.91 (10), p.102905-102905-3

2007

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Non-classical hot-electron mechanism and its implications on the reliability and scalability of the high- κ dielectric N-MOS Flash memory cell

Microelectronic engineering, 2007-09, Vol.84 (9), p.1929-1933

2007

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Breakdowns in high-k gate stacks of nano-scale CMOS devices

Microelectronic engineering, 2005-06, Vol.80, p.353-361

2005

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Study of Dopant Redistribution at the Substrate-Source/Drain p-n Junction of Nanoscale MOSFET During Progressive Breakdown

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2786-2791

2006

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IEEE_Xplore

Effect of mechanical strain on the NBTI of short-channel p-MOSFETS: Role of impactionization

2009 IEEE International Reliability Physics Symposium, 2009, p.1019-1022

2009

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IEEE_Xplore

Optimization of colorectal cancer vaccine candidate protein GA733-Fc expression in a baculovirus insect cell system

Entomological Research, 2015, 45(1), , pp.39-48

2015

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Energy distribution and electrical characteristics of NBTI induced Si/SiON interface states

2008 IEEE International Reliability Physics Symposium, 2008, p.737-738

2008

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IEEE_Xplore

Physical framework for NBTI: Insight from ultra-fast switching measurement of NBTI recovery

2008 IEEE International Reliability Physics Symposium, 2008, p.735-736

2008

Link zum Volltext
IEEE_Xplore

The Impact of Nitrogen on the Frequency Dependence of Negative-Bias Temperature Instability

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.688-689

2007

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IEEE_Xplore

Chimerism of multiple monoclonal antibodies expressed in a single plant

Horticulture, 2012, Environment, and Biotechnology, 53(6), , pp.544-551

2012

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Real-time observation of trap generation by scanning tunneling microscopy and the correlation to high-κ gate stack breakdown

2009 IEEE International Reliability Physics Symposium, 2009, p.704-707

2009

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IEEE_Xplore

HfO2/spacer-interface breakdown in HfO2 high-κ/poly-silicon gate stacks

Microelectronic engineering, 2005-06, Vol.80, p.370-373

2005

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Recovery of the NBTI-Stressed Ultrathin Gate p-MOSFET: The Role of Deep-Level Hole Traps

Insight Into the Suppressed Recovery of NBTI-Stressed Ultrathin Oxynitride Gate pMOSFET

Effect of Hole-Trap Distribution on the Power-Law Time Exponent of NBTI

Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron

Generation-recombination noise in the near fully depleted SIMOX SOI n-MOSFET - physical characteristics and modeling

Evidence for a composite interface State generation mode in the CHE-stressed deep-submicrometer n-MOSFET

A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: device characterization and damage assessment

Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region

Characterization of leakage current in thin gate oxide subjected to 10 keV X-ray irradiation

The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFETs

Evolution of oxide charge trapping under bias temperature stressing

On the dynamic NBTI of the HfO 2 and HfSiON P–MOSFET

On the dynamic NBTI of the HfO2 and HfSiON P-MOSFET

Bilayer gate dielectric study by scanning tunneling microscopy

Non-classical hot-electron mechanism and its implications on the reliability and scalability of the high- κ dielectric N-MOS Flash memory cell

Breakdowns in high-k gate stacks of nano-scale CMOS devices

Study of Dopant Redistribution at the Substrate-Source/Drain p-n Junction of Nanoscale MOSFET During Progressive Breakdown

Effect of mechanical strain on the NBTI of short-channel p-MOSFETS: Role of impactionization

Optimization of colorectal cancer vaccine candidate protein GA733-Fc expression in a baculovirus insect cell system

Energy distribution and electrical characteristics of NBTI induced Si/SiON interface states

Physical framework for NBTI: Insight from ultra-fast switching measurement of NBTI recovery

The Impact of Nitrogen on the Frequency Dependence of Negative-Bias Temperature Instability

Chimerism of multiple monoclonal antibodies expressed in a single plant

Real-time observation of trap generation by scanning tunneling microscopy and the correlation to high-κ gate stack breakdown

HfO2/spacer-interface breakdown in HfO2 high-κ/poly-silicon gate stacks

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