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Deep Neural Network for the Detections of Fall and Physical Activities Using Foot Pressures and Inertial Sensing

Sensors (Basel, Switzerland), 2023-01, Vol.23 (1), p.495

2023

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DP-QPSK Coherent Detection Using 2D Grating Coupled Silicon Based Receiver

IEEE photonics journal, 2021-02, Vol.13 (1), p.1-5

2021

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Saving Phosphor by 150% and Producing High Color-Rendering Index Candlelight LEDs Containing Composite Photonic Crystals

Journal of lightwave technology, 2014-05, Vol.32 (10), p.1930-1935

2014

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IEEE_Xplore

A Precision Health Service for Chronic Diseases: Development and Cohort Study Using Wearable Device, Machine Learning, and Deep Learning

IEEE journal of translational engineering in health and medicine, 2022-01, Vol.10, p.1-14

2022

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Deep Ultraviolet AlGaN-Based Light-Emitting Diodes with p-AlGaN/AlGaN Superlattice Hole Injection Structures

Processes, 2021-10, Vol.9 (10), p.1727

2021

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Partial discharge detection for stator winding insulation of motors using artificial neural network

Advances in mechanical engineering, 2018-07, Vol.10 (7), p.168781401878612

2018

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Energy Consumption, GDP, and Foreign Direct Investment in Germany

Applied Mechanics and Materials, 2014-01, Vol.675-677, p.1797-1809

2014

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GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars

IEEE photonics technology letters, 2009-09, Vol.21 (18), p.1293-1295

2009

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IEEE_Xplore

The influence of polarized 3D display on autonomic nervous activities

Displays, 2014-10, Vol.35 (4), p.196-201

2014

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GaN-Based Light-Emitting-Diode With a p-InGaN Layer

Journal of display technology, 2014-03, Vol.10 (3), p.204-207

2014

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IEEE_Xplore

GaN-Based Light-Emitting Diodes With Pillar Structures Around the Mesa Region

IEEE journal of quantum electronics, 2010-07, Vol.46 (7), p.1066-1071

2010

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IEEE_Xplore

Universal Bias Dependence of Excess Current Induced by Self-Heating Effect for a-Si:H TFTs

IEEE transactions on electron devices, 2007-05, Vol.54 (5), p.1238-1243

2007

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IEEE_Xplore

Performance enhancement by the In0.65Ga0.35As pseudomorphic channel on the In0.5Al0.5As metamorphic buffer Layer

IEEE transactions on electron devices, 2004-07, Vol.51 (7), p.1214

2004

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Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

Solid-state electronics, 2015-07, Vol.109, p.29-32

2015

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A tactile sensing array with tunable sensing ranges using liquid crystal and carbon nanotubes composites

2011 IEEE 24th International Conference on Micro Electro Mechanical Systems, 2011, p.553-556

2011

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IEEE_Xplore

A 100 MHz-1 GHz Adaptive Bandwidth PLL Using TDC Technique

2007 14th IEEE International Conference on Electronics, Circuits and Systems, 2007, p.1163-1166

2007

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IEEE_Xplore

Phosphor-Free GaN-Based Cascade Transverse Junction Light Emitting Diode Arrays for the High-Power Generation of White-Light

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, 2007, p.584-585

2007

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IEEE_Xplore

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Deep Neural Network for the Detections of Fall and Physical Activities Using Foot Pressures and Inertial Sensing

DP-QPSK Coherent Detection Using 2D Grating Coupled Silicon Based Receiver

Saving Phosphor by 150% and Producing High Color-Rendering Index Candlelight LEDs Containing Composite Photonic Crystals

A Precision Health Service for Chronic Diseases: Development and Cohort Study Using Wearable Device, Machine Learning, and Deep Learning

Deep Ultraviolet AlGaN-Based Light-Emitting Diodes with p-AlGaN/AlGaN Superlattice Hole Injection Structures

Partial discharge detection for stator winding insulation of motors using artificial neural network

Energy Consumption, GDP, and Foreign Direct Investment in Germany

GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars

The influence of polarized 3D display on autonomic nervous activities

GaN-Based Light-Emitting-Diode With a p-InGaN Layer

GaN-Based Light-Emitting Diodes With Pillar Structures Around the Mesa Region

Universal Bias Dependence of Excess Current Induced by Self-Heating Effect for a-Si:H TFTs

Performance enhancement by the In0.65Ga0.35As pseudomorphic channel on the In0.5Al0.5As metamorphic buffer Layer

Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

A tactile sensing array with tunable sensing ranges using liquid crystal and carbon nanotubes composites

A 100 MHz-1 GHz Adaptive Bandwidth PLL Using TDC Technique

Phosphor-Free GaN-Based Cascade Transverse Junction Light Emitting Diode Arrays for the High-Power Generation of White-Light

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