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Dependence of growth induced anisotropy on growth rate and composition of YSmLuCaGeIG LPE films

IEEE transactions on magnetics, 1987-09, Vol.23 (5), p.3370-3372

1987

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Magnetization, strain, and anisotropy field of Ne+ and H+ ion-implanted layers in bubble garnet films

Journal of applied physics, 1982-05, Vol.53 (5), p.3740-3744

1982

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Ferromagnetic resonance study of the anisotropy profile in implanted bubble garnets

Journal of applied physics, 1979-09, Vol.50 (9), p.5878-5884

1979

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Magnetic and crystalline properties of ion-implanted garnet films with plasma exposure

IEEE transactions on magnetics, 1984-09, Vol.20 (5), p.1117-1119

1984

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Crystalline and magnetic properties of an ion-implanted layer in bubble garnet films

Journal of applied physics, 1978-01, Vol.49 (12), p.5816-5822

1978

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Ferromagnetic resonance study of the anisotropy field and nonmagnetic regions in implanted layers of bubble garnet films

Journal of applied physics, 1979-01, Vol.50 (8), p.5442-5445

1979

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Energy gap measurement of niobium nitride

Physics letters. A, 1968-01, Vol.28 (5), p.335-336

1968

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Effects of Ion-Implantation in Magnetic Garnet

IEEE translation journal on magnetics in Japan, 1987-10, Vol.2 (10), p.928-936

1987

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Characteristics of Highly Sensitive Magnetoresistive Sensors

IEEE translation journal on magnetics in Japan, 1985-10, Vol.1 (7), p.885-886

1985

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Design consideration for a 2-μm-period ion-implanted propagation track (abstract)

Journal of applied physics, 1985-04, Vol.57 (8), p.4080-4080

1985

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Design of 2 µm-period minor loops in hybrid bubble memory devices

IEEE transactions on magnetics, 1985-09, Vol.21 (5), p.1709-1711

1985

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Design of 2 mum-period minor loops in hybrid bubble memory devices

IEEE transactions on magnetics, 1985-09, Vol.21 (5), p.1709-1711

1985

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Effects of Plasma Exposure on Magnetization of Ion-implanted Bubble Garnet

IEEE translation journal on magnetics in Japan, 1987-03, Vol.2 (3), p.269-270

1987

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Effect of Plasma Exposure on Magnetic Properties of Ion-implanted Bubble Garnet Film with Suppression of Growth-induced Anisotropy

IEEE translation journal on magnetics in Japan, 1987-03, Vol.2 (3), p.271-272

1987

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Designs and Characteristics of 2 μm Period Ion-Implanted Propagation Tracks

IEEE translation journal on magnetics in Japan, 1985-08, Vol.1 (5), p.584-585

1985

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Ion Implantation Condition for 2 μm Period Ion-Implanted Propagation Tracks

IEEE translation journal on magnetics in Japan, 1985-08, Vol.1 (5), p.582-583

1985

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Design Considerations of Permalloy Propagation Patterns for Hybrid Bubble Devices with a 2 μm Period

IEEE translation journal on magnetics in Japan, 1985-12, Vol.1 (9), p.1109-1110

1985

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Design and characteristics of 4 µm period ion-implanted bubble devices with major line block replicate gate

IEEE transactions on magnetics, 1983-09, Vol.19 (5), p.1829-1831

1983

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Design and characteristics of 4 mum period ion-implanted bubble devices with major line block replicate gate

IEEE transactions on magnetics, 1983-09, Vol.19 (5), p.1829-1831

1983

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Operation of 3mum bubble serial loop devices designed on single level masking

IEEE transactions on magnetics, 1978-09, Vol.14 (5), p.312-314

1978

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Fabrication and Operating Characteristics of Ion-Implanted Bubble Memory Chips for a 16M-Bit Device

IEEE translation journal on magnetics in Japan, 1989-03, Vol.4 (3), p.178-183

1989

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Fabrication and Operating Characteristics of Ion-Implanted Bubble Memory Chips for a 16M Bit Device

Journal of the Magnetics Society of Japan, 1988/04/30, Vol.12(2), pp.163-166

1988

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Strain and Anisotropy Field Profiles in Ion Implanted Bubble Layer

Journal of the Magnetics Society of Japan, 1982/03/31, Vol.6(2), pp.91-94

1982

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Operation of 3µm bubble serial loop devices designed on single level masking

IEEE transactions on magnetics, 1978-09, Vol.14 (5), p.312-314

1978

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Radiation resistance of a Mach-Zehnder optomodulator for analog signal transmission

1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record, 1995, Vol.1, p.627-629 vol.1

1995

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Dependence of growth induced anisotropy on growth rate and composition of YSmLuCaGeIG LPE films

Magnetization, strain, and anisotropy field of Ne+ and H+ ion-implanted layers in bubble garnet films

Ferromagnetic resonance study of the anisotropy profile in implanted bubble garnets

Magnetic and crystalline properties of ion-implanted garnet films with plasma exposure

Crystalline and magnetic properties of an ion-implanted layer in bubble garnet films

Ferromagnetic resonance study of the anisotropy field and nonmagnetic regions in implanted layers of bubble garnet films

Energy gap measurement of niobium nitride

Effects of Ion-Implantation in Magnetic Garnet

Characteristics of Highly Sensitive Magnetoresistive Sensors

Design consideration for a 2-μm-period ion-implanted propagation track (abstract)

Design of 2 µm-period minor loops in hybrid bubble memory devices

Design of 2 mum-period minor loops in hybrid bubble memory devices

Effects of Plasma Exposure on Magnetization of Ion-implanted Bubble Garnet

Effect of Plasma Exposure on Magnetic Properties of Ion-implanted Bubble Garnet Film with Suppression of Growth-induced Anisotropy

Designs and Characteristics of 2 μm Period Ion-Implanted Propagation Tracks

Ion Implantation Condition for 2 μm Period Ion-Implanted Propagation Tracks

Design Considerations of Permalloy Propagation Patterns for Hybrid Bubble Devices with a 2 μm Period

Design and characteristics of 4 µm period ion-implanted bubble devices with major line block replicate gate

Design and characteristics of 4 mum period ion-implanted bubble devices with major line block replicate gate

Operation of 3mum bubble serial loop devices designed on single level masking

Fabrication and Operating Characteristics of Ion-Implanted Bubble Memory Chips for a 16M-Bit Device

Fabrication and Operating Characteristics of Ion-Implanted Bubble Memory Chips for a 16M Bit Device

Strain and Anisotropy Field Profiles in Ion Implanted Bubble Layer

Operation of 3µm bubble serial loop devices designed on single level masking

Radiation resistance of a Mach-Zehnder optomodulator for analog signal transmission

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