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Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation

Applied physics letters, 2003-01, Vol.82 (4), p.568-570

2003

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Band alignment and defect states at SiC/oxide interfaces

Journal of physics. Condensed matter, 2004-05, Vol.16 (17), p.S1839-S1856

2004

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Properties of the oxygen vacancy in ZnO

Applied physics. A, Materials science & processing, 2007-07, Vol.88 (1), p.147-151

2007

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Electrical activation of high-concentration aluminum implanted in 4H-SiC

Journal of applied physics, 2004-11, Vol.96 (9), p.4916-4922

2004

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Intrinsic SiC/SiO2 Interface States

Physica status solidi. A, Applied research, 1997-07, Vol.162 (1), p.321-337

1997

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Fabrication and Characterization of 3C-SiC-Based MOSFETs

Chemical vapor deposition, 2006-08, Vol.12 (8-9), p.523-530

2006

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Physical Properties of SiC

MRS bulletin, 1997-03, Vol.22 (3), p.25-29

1997

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Shallow electron traps at the 4H–SiC/SiO2 interface

Applied physics letters, 2000-01, Vol.76 (3), p.336-338

2000

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Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC

Journal of applied physics, 2002-07, Vol.92 (1), p.549-554

2002

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Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

Applied physics letters, 2012-03, Vol.100 (13), p.132107-132107-3

2012

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Band offsets and electronic structure of SiC/SiO2 interfaces

Journal of applied physics, 1996-03, Vol.79 (6), p.3108-3114

1996

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Energetically deep defect centers in vapor-phase grown zinc oxide

Applied physics. A, Materials science & processing, 2007-07, Vol.88 (1), p.141-145

2007

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Electrical activation of implanted phosphorus ions in [0001]- and [11–20]-oriented 4H-SiC

Journal of applied physics, 2002-06, Vol.91 (11), p.9182-9186

2002

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Comparison of the electrical activation of P+ and N+ ions co-implanted along with Si+ or C+ ions into 4H-SiC

Applied physics letters, 2004-04, Vol.84 (16), p.3064-3066

2004

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Electrical and optical characterization of SiC

Physica. B, Condensed matter, 1993-04, Vol.185 (1), p.264-283

1993

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Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism

Applied physics letters, 2000-11, Vol.77 (20), p.3188-3190

2000

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Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC

Materials science forum, 2010-01, Vol.645-648, p.455-458

2010

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Lifetime Investigations of 4H-SiC PiN Power Diodes

Materials science forum, 2009-03, Vol.615-617, p.699-702

2009

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Growth of SiC polytypes by the physical vapour transport technique

Journal of physics. Condensed matter, 2004-05, Vol.16 (17), p.S1597-S1610

2004

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Identification of sulfur double donors in 4H-, 6H-, and 3C-silicon carbide

Journal of applied physics, 2006-06, Vol.99 (12)

2006

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Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3661-3666

2006

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Photoluminescence and transport studies of boron in 4H SiC

Journal of applied physics, 1998-06, Vol.83 (12), p.7909-7919

1998

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Electrical Activation of B+-Ions Implanted into 4H-SiC

Materials science forum, 2010-01, Vol.645-648, p.697-700

2010

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Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy

Journal of applied physics, 2007-12, Vol.102 (11)

2007

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Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC

Materials science forum, 2010-04, Vol.645-648, p.339-342

2010

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Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation

Band alignment and defect states at SiC/oxide interfaces

Properties of the oxygen vacancy in ZnO

Electrical activation of high-concentration aluminum implanted in 4H-SiC

Intrinsic SiC/SiO2 Interface States

Fabrication and Characterization of 3C-SiC-Based MOSFETs

Physical Properties of SiC

Shallow electron traps at the 4H–SiC/SiO2 interface

Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

Band offsets and electronic structure of SiC/SiO2 interfaces

Energetically deep defect centers in vapor-phase grown zinc oxide

Electrical activation of implanted phosphorus ions in [0001]- and [11–20]-oriented 4H-SiC

Comparison of the electrical activation of P+ and N+ ions co-implanted along with Si+ or C+ ions into 4H-SiC

Electrical and optical characterization of SiC

Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism

Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC

Lifetime Investigations of 4H-SiC PiN Power Diodes

Growth of SiC polytypes by the physical vapour transport technique

Identification of sulfur double donors in 4H-, 6H-, and 3C-silicon carbide

Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices

Photoluminescence and transport studies of boron in 4H SiC

Electrical Activation of B+-Ions Implanted into 4H-SiC

Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy

Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC

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