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0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

Electronics letters, 2013-05, Vol.49 (11), p.692-694

2013

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0.013 mm2, kHz-to-GHz-bandwidth, third-order all-pole lowpass filter with 0.52-to-1.11 pW/pole/Hz efficiency

Electronics letters, 2013-10, Vol.49 (21), p.1340-1342

2013

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A 0.065-mm 3 Monolithically-Integrated Ultrasonic Wireless Sensing Mote for Real-Time Physiological Temperature Monitoring

IEEE transactions on biomedical circuits and systems, 2020-06, Vol.14 (3), p.412-424

2020

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A 0.065-mm3 Monolithically-Integrated Ultrasonic Wireless Sensing Mote for Real-Time Physiological Temperature Monitoring

IEEE transactions on biomedical circuits and systems, 2020-06, Vol.14 (3), p.412-424

2020

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0.07 mm^sup 2^, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

Electronics letters, 2012-05, Vol.48 (10), p.1

2012

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0.07 mm super( 2), 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

Electronics letters, 2012-05, Vol.48 (10), p.1-1

2012

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0.07 mm2, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

Electronics letters, 2012, Vol.48 (10), p.552-554

2012

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A 0.127 μm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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IEEE_Xplore

A 0.5V Constant-gm rail-to-rail OPAMP using a bulk-driven signal compressor

2009 International Conference on Communications, Circuits and Systems, 2009, p.657-660

2009

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A 0.6-mm2 Powering and Data Telemetry System Compatible with Ultrasound B-Mode Imaging for Freely Moving Biomedical Sensor Systems

2019 IEEE Custom Integrated Circuits Conference (CICC), 2019, p.1-4

2019

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IEEE_Xplore

A 1.0625 ~ 14.025 Gb/s Multi-Media Transceiver With Full-Rate Source-Series-Terminated Transmit Driver and Floating-Tap Decision-Feedback Equalizer in 40 nm CMOS

IEEE journal of solid-state circuits, 2011-12, Vol.46 (12), p.3126-3139

2011

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A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications

2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007, p.324-606

2007

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IEEE_Xplore

1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.23.2.1-23.2.4

2020

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IEEE_Xplore

1.3 to 1.6 micron quantum dot devices

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.675-678

2004

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IEEE_Xplore

1.3-μm Quantum Dot Monolithic Multi-Section Passively Mode-Locked Lasers

LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2006, p.872-873

2006

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IEEE_Xplore

A 1.4 THz Quasi-Optical NbN Superconducting HEB Mixer Developed for the DATE5 Telescope

IEEE transactions on applied superconductivity, 2015-06, Vol.25 (3), p.1-5

2015

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IEEE_Xplore

1.5 Gbit/s/channel operation of multiple-wavelength vertical-cavity photonic integrated emitter arrays for low-cost multimode WDM local-area networks

Electronics letters, 1998-01, Vol.34 (8), p.768

1998

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1.5 μm lasers with sub 10 mHz linewidth

2017 Conference on Lasers and Electro-Optics (CLEO), 2017, p.1-2

2017

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A 1.8-V 22-mW 10-bit 30-MS/s Pipelined CMOS ADC for Low-Power Subsampling Applications

IEEE journal of solid-state circuits, 2008-02, Vol.43 (2), p.321-329

2008

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IEEE_Xplore

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2513

2003

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0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

0.013 mm2, kHz-to-GHz-bandwidth, third-order all-pole lowpass filter with 0.52-to-1.11 pW/pole/Hz efficiency

A 0.065-mm 3 Monolithically-Integrated Ultrasonic Wireless Sensing Mote for Real-Time Physiological Temperature Monitoring

A 0.065-mm3 Monolithically-Integrated Ultrasonic Wireless Sensing Mote for Real-Time Physiological Temperature Monitoring

0.07 mm^sup 2^, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

0.07 mm super( 2), 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

0.07 mm2, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

A 0.127 μm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications

A 0.5V Constant-gm rail-to-rail OPAMP using a bulk-driven signal compressor

A 0.6-mm2 Powering and Data Telemetry System Compatible with Ultrasound B-Mode Imaging for Freely Moving Biomedical Sensor Systems

A 1.0625 ~ 14.025 Gb/s Multi-Media Transceiver With Full-Rate Source-Series-Terminated Transmit Driver and Floating-Tap Decision-Feedback Equalizer in 40 nm CMOS

A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications

1.2 kV Vertical GaN Fin JFETs with Robust Avalanche and Fast Switching Capabilities

1.3 to 1.6 micron quantum dot devices

1.3-μm Quantum Dot Monolithic Multi-Section Passively Mode-Locked Lasers

A 1.4 THz Quasi-Optical NbN Superconducting HEB Mixer Developed for the DATE5 Telescope

1.5 Gbit/s/channel operation of multiple-wavelength vertical-cavity photonic integrated emitter arrays for low-cost multimode WDM local-area networks

1.5 μm lasers with sub 10 mHz linewidth

A 1.8-V 22-mW 10-bit 30-MS/s Pipelined CMOS ADC for Low-Power Subsampling Applications

A 1.8 V CMOS linear transconductor and its application to continuous-time filters

1.9 mu m hybrid silicon/III-V semiconductor laser

1.9 [mu]m hybrid silicon/III-V semiconductor laser

1.9 μm hybrid silicon/III-V semiconductor laser

1.9 µm hybrid silicon/III-V semiconductor laser

1/f noise in Si and Si0.7Ge0.3 pMOSFETs

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