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Superconducting properties of the C15-type Laves phase ZrIr2 with an Ir-based kagome lattice

Chinese physics B, 2023-01, Vol.32 (1), p.111-116

2023

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Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes

Chinese physics B, 2023-03, Vol.32 (3), p.38502-670

2023

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Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment

Chinese physics B, 2021-02, Vol.30 (2), p.28502-640

2021

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Effects of Levy noise and immune delay on the extinction behavior in a tumor growth model

Chinese physics B, 2014-09, Vol.23 (9), p.126-132

郝孟丽徐伟谷旭东戚鲁媛

2014

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Test particle simulations of resonant interactions between energetic electrons and discrete, multi-frequency artificial whistler waves in the plasmasphere

Chinese physics B, 2014-08, Vol.23 (8), p.678-686

2014

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Observation of mode-like features in tunneling spectra of iron-based superconductors

Chinese physics B, 2015-07, Vol.24 (7), p.77402-1-077402-6

2015

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Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

Chinese physics B, 2015-04, Vol.24 (4), p.048503-1-048503-5

2015

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Simultaneous identification of unknown time delays and model parameters in uncertain dynamical systems with linear or nonlinear parameterization by autosynchronization

Chinese physics B, 2013-09, Vol.22 (9), p.190-196

顾卫东孙志勇吴晓明于长斌

2013

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Adaptive lag synchronization of uncertain dynamical systems with time delays via simple transmission lag feedback

Chinese physics B, 2013-08, Vol.22 (8), p.346-355, Article 080507

顾卫东孙志勇吴晓明于长斌

2013

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Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

Chinese physics B, 2015-08, Vol.24 (8), p.534-538

吕元杰冯志红顾国栋尹甲运房玉龙王元刚谭鑫周幸叶林兆军冀子武蔡树军

2015

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Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Chinese physics B, 2014-02, Vol.23 (2), p.27101-1-027101-5

2014

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Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Chinese physics B, 2014-07, Vol.23 (7), p.77105-1-077105-4

2014

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Directly extracting both threshold voltage and series resistance from the conductance-voltage curve of an AlGaN/GaN Schottky diode

Chinese physics B, 2013-07, Vol.22 (7), p.426-429

吕元杰冯志红顾国栋敦少博尹甲运韩婷婷盛百城蔡树军刘波林兆军

2013

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Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Chinese physics B, 2014-02, Vol.23 (2), p.27102-1-027102-5

2014

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Stochastic response of van der Pol oscillator with two kinds of fractional derivatives under Gaussian white noise excitation

Chinese physics B, 2016-02, Vol.25 (2), p.13-21

杨勇歌徐伟孙亚辉谷旭东

2016

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Superconducting properties of the C15-type Laves phase ZrIr 2 with an Ir-based kagome lattice

Chinese physics B, 2023-01, Vol.32 (1), p.17402

2023

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Multi-wavelength continuous-wave Nd:YVO4 self-Raman laser under in-band pumping Project supported by the National Natural Science Foundation of China (Grant No. 11774301) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11804292)

Chinese physics B, 2019-08, Vol.28 (8)

2019

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Multi-wavelength continuous-wave Nd:YVO 4 self-Raman laser under in-band pumping

Chinese physics B, 2019-08, Vol.28 (8), p.84210

2019

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Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatmentProject supported by the National Natural Science Foundation of China (Grant Nos. 61674130 and 61804139)

Chinese physics B, 2021-02, Vol.30 (2)

2021

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Tip-induced superconductivity commonly existing in the family of transition-metal dipnictides MPn2Project supported by the National Key R&D Program of China (Grant Nos. 2017YFA0302904, 2017YFA0303201, 2018YFA0305602, and 2016YFA0300604), the National Natural Science Foundation of China (Grants Nos. 12074002, 11574372, 11674331, 11804379, and 11874417), the National Basic Research Program of China (Grant No. 2015CB921303), the Strategic Priority Research Program (B) of the Chinese Academy of Scie

Chinese physics B, 2021-01, Vol.30 (1)

2021

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Tip-induced superconductivity commonly existing in the family of transition-metal dipnictides MP n 2

Chinese physics B, 2021-01, Vol.30 (1), p.17304

2021

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Stochastic response of van der Pol oscillator with two kinds of fractional derivatives under Gaussian white noise excitationProject supported by the National Natural Science Foundation of China (Grant Nos. 11472212, 11532011, and 11502201)

Chinese physics B, 2015-12, Vol.25 (2)

2015

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Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor Project supported by the National Natural Science Foundation of China (Grant No. 61306113)

Chinese physics B, 2015-04, Vol.24 (4)

2015

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Observation of mode-like features in tunneling spectra of iron-based superconductorsProject supported by the National Basic Research Program of China (Grant Nos. 2011CBA00110 and 2012CB821403), the National Natural Science Foundation of China (Grant Nos. 11174349 and 11322432), and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB07020300)

Chinese physics B, 2015-05, Vol.24 (7)

2015

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Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistorProject supported by the National Natural Science Foundation of China (Grant Nos. 61306113 and11174182)

Chinese physics B, 2015-06, Vol.24 (8)

2015

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Superconducting properties of the C15-type Laves phase ZrIr2 with an Ir-based kagome lattice

Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes

Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment

Effects of Levy noise and immune delay on the extinction behavior in a tumor growth model

Test particle simulations of resonant interactions between energetic electrons and discrete, multi-frequency artificial whistler waves in the plasmasphere

Observation of mode-like features in tunneling spectra of iron-based superconductors

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

Simultaneous identification of unknown time delays and model parameters in uncertain dynamical systems with linear or nonlinear parameterization by autosynchronization

Adaptive lag synchronization of uncertain dynamical systems with time delays via simple transmission lag feedback

Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Directly extracting both threshold voltage and series resistance from the conductance-voltage curve of an AlGaN/GaN Schottky diode

Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Stochastic response of van der Pol oscillator with two kinds of fractional derivatives under Gaussian white noise excitation

Superconducting properties of the C15-type Laves phase ZrIr 2 with an Ir-based kagome lattice

Multi-wavelength continuous-wave Nd:YVO4 self-Raman laser under in-band pumping Project supported by the National Natural Science Foundation of China (Grant No. 11774301) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11804292)

Multi-wavelength continuous-wave Nd:YVO 4 self-Raman laser under in-band pumping

Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatmentProject supported by the National Natural Science Foundation of China (Grant Nos. 61674130 and 61804139)

Tip-induced superconductivity commonly existing in the family of transition-metal dipnictides MP n 2

Stochastic response of van der Pol oscillator with two kinds of fractional derivatives under Gaussian white noise excitationProject supported by the National Natural Science Foundation of China (Grant Nos. 11472212, 11532011, and 11502201)

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor Project supported by the National Natural Science Foundation of China (Grant No. 61306113)

Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistorProject supported by the National Natural Science Foundation of China (Grant Nos. 61306113 and11174182)

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