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Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO

Nature materials, 2013-03, Vol.12 (3), p.240-245

2013

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Domain Wall Motion Induced by Electric Current in a Perpendicularly Magnetized Co/Ni Nano-Wire

Applied physics express, 2009-05, Vol.2, p.53002

2009

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Transition in mechanism for current-driven magnetic domain wall dynamics

Applied physics express, 2014-05, Vol.7 (5), p.53006

2014

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Tradeoff between low-power operation and thermal stability in magnetic domain-wall-motion devices driven by spin Hall torque

Applied physics express, 2014-05, Vol.7 (5), p.53003

2014

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Stack Structure Dependence of Co/Ni Multilayer for Current-Induced Domain Wall Motion

Applied physics express, 2010-11, Vol.3 (11), p.113002

2010

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Different stochastic behaviors for magnetic field and current in domain wall creep motion

Applied physics express, 2014-05, Vol.7 (5), p.53005

2014

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Effect of Inserting a Pt Layer into a Perpendicularly Magnetized Co/Ni Multilayered Film in Terms of Current-Induced Domain Wall Motion

Japanese Journal of Applied Physics, 2012-10, Vol.51 (10), p.100202-100202-3

2012

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Magnetic configuration of submicron-sized magnetic patterns in domain wall motion memory

Journal of applied physics, 2010-05, Vol.107 (10), p.103912-103912-9

2010

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Current-Induced Magnetic Domain Wall Motion in Co/Ni Nanowire at Low Temperature

Applied physics express, 2011-06, Vol.4 (6), p.63003

2011

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Verification of the Stress Reduction System Using Forest Video in VDT Work

The International Conference on Business & Technology Transfer, 2021, Vol.2021.10, p.304

2021

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Thickness dependence of current-induced domain wall motion in a Co/Ni multi-layer with out-of-plane anisotropy

Applied physics letters, 2013-04, Vol.102 (15)

2013

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Enhancement of writing margin for low switching toggle magnetic random access memories using multilayer synthetic antiferromagnetic structures

Journal of applied physics, 2006-04, Vol.99 (8)

2006

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Large thermal stability independent of critical current of domain wall motion in Co/Ni nanowires with step pinning sites

Journal of applied physics, 2010-12, Vol.108 (11), p.113914-113914-4

2010

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Control of Multiple Magnetic Domain Walls by Current in a Co/Ni Nano-Wire

Applied physics express, 2010-07, Vol.3 (7), p.73004

2010

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Current-Induced Magnetic Domain Wall Motion in a Co/Ni Nanowire with Structural Inversion Asymmetry

Applied physics express, 2013-03, Vol.6 (3), p.33001

2013

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Effect of Inserting a Pt Layer into a Perpendicularly Magnetized Co/Ni Multilayered Film in Terms of Current-Induced Domain Wall Motion

Japanese Journal of Applied Physics, 2012-10, Vol.51 (10R), p.100202

2012

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Wire Width Dependence of Threshold Current Density for Domain Wall Motion in Co/Ni Nanowires

IEEE transactions on magnetics, 2011-10, Vol.47 (10), p.3089-3091

2011

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Toggle magnetic random access memory cells scalable to a capacity of over 100 megabits

Journal of applied physics, 2008-01, Vol.103 (1)

2008

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Effect of Device Temperature on Domain Wall Motion in a Perpendicularly Magnetized Co/Ni Wire

Applied physics express, 2011-01, Vol.4 (1), p.13007

2011

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Operating principle of a three-terminal domain wall device with perpendicularly magnetized Ta/CoFeB/MgO free layer and underlying hard magnets

Japanese Journal of Applied Physics, 2014-06, Vol.53 (6), p.63002-1-063002-7

2014

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MRAM Cell Technology for Over 500-MHz SoC

IEEE journal of solid-state circuits, 2007-04, Vol.42 (4), p.830-838

2007

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Intrinsic Threshold Current Density of Domain Wall Motion in Nanostrips With Perpendicular Magnetic Anisotropy for Use in Low-Write-Current MRAMs

IEEE transactions on magnetics, 2008-11, Vol.44 (11), p.2539-2542

2008

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Toggle magnetic random access memory cells scalable to a capacityof over 100 megabits

Journal of applied physics, 2008-01, Vol.103 (1), p.013902-013902-8

2008

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Evaluation of Scalability for Current-Driven Domain Wall Motion in a Co/Ni Multilayer Strip for Memory Applications

IEEE transactions on magnetics, 2009-10, Vol.45 (10), p.3776-3779

2009

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Analysis of MTJ Edge Deformation Influence on Switching Current Distribution for Next-Generation High-Speed MRAMs

IEEE transactions on magnetics, 2009-10, Vol.45 (10), p.3804-3807

2009

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Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO

Domain Wall Motion Induced by Electric Current in a Perpendicularly Magnetized Co/Ni Nano-Wire

Transition in mechanism for current-driven magnetic domain wall dynamics

Tradeoff between low-power operation and thermal stability in magnetic domain-wall-motion devices driven by spin Hall torque

Stack Structure Dependence of Co/Ni Multilayer for Current-Induced Domain Wall Motion

Different stochastic behaviors for magnetic field and current in domain wall creep motion

Effect of Inserting a Pt Layer into a Perpendicularly Magnetized Co/Ni Multilayered Film in Terms of Current-Induced Domain Wall Motion

Magnetic configuration of submicron-sized magnetic patterns in domain wall motion memory

Current-Induced Magnetic Domain Wall Motion in Co/Ni Nanowire at Low Temperature

Verification of the Stress Reduction System Using Forest Video in VDT Work

Thickness dependence of current-induced domain wall motion in a Co/Ni multi-layer with out-of-plane anisotropy

Enhancement of writing margin for low switching toggle magnetic random access memories using multilayer synthetic antiferromagnetic structures

Large thermal stability independent of critical current of domain wall motion in Co/Ni nanowires with step pinning sites

Control of Multiple Magnetic Domain Walls by Current in a Co/Ni Nano-Wire

Current-Induced Magnetic Domain Wall Motion in a Co/Ni Nanowire with Structural Inversion Asymmetry

Effect of Inserting a Pt Layer into a Perpendicularly Magnetized Co/Ni Multilayered Film in Terms of Current-Induced Domain Wall Motion

Wire Width Dependence of Threshold Current Density for Domain Wall Motion in Co/Ni Nanowires

Toggle magnetic random access memory cells scalable to a capacity of over 100 megabits

Effect of Device Temperature on Domain Wall Motion in a Perpendicularly Magnetized Co/Ni Wire

Operating principle of a three-terminal domain wall device with perpendicularly magnetized Ta/CoFeB/MgO free layer and underlying hard magnets

MRAM Cell Technology for Over 500-MHz SoC

Intrinsic Threshold Current Density of Domain Wall Motion in Nanostrips With Perpendicular Magnetic Anisotropy for Use in Low-Write-Current MRAMs

Toggle magnetic random access memory cells scalable to a capacityof over 100 megabits

Evaluation of Scalability for Current-Driven Domain Wall Motion in a Co/Ni Multilayer Strip for Memory Applications

Analysis of MTJ Edge Deformation Influence on Switching Current Distribution for Next-Generation High-Speed MRAMs

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