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A 0.0056-mm2 −249-dB-FoM All-Digital MDLL Using a Block-Sharing Offset-Free Frequency-Tracking Loop and Dual Multiplexed-Ring VCOs

IEEE journal of solid-state circuits, 2019-01, Vol.54 (1), p.88-98

2019

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IEEE_Xplore

A 0.01-mm2 Mostly Digital Capacitor-Less AFE for Distributed Autonomous Neural Sensor Nodes

IEEE solid-state circuits letters, , Vol.1 (7), p.162-165

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IEEE_Xplore

A 0.13- \mu CMOS Low-Power Capacitor-Less LDO Regulator Using Bulk-Modulation Technique

IEEE transactions on circuits and systems. I, Regular papers, 2014-11, Vol.61 (11), p.3105-3114

2014

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IEEE_Xplore

A 0.13- \mu \text CMOS Dynamically Reconfigurable Charge Pump for Electrostatic MEMS Actuation

IEEE transactions on very large scale integration (VLSI) systems, 2017-04, Vol.25 (4), p.1261-1270

2017

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IEEE_Xplore

0.16nm spaced multi-wavelength Brillouin fiber laser in a figure-of-eight configuration

Optics and laser technology, 2011-06, Vol.43 (4), p.866-869

2011

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A 0.18- \mu} Monolithic Li-Ion Battery Charger for Wireless Devices Based on Partial Current Sensing and Adaptive Reference Voltage

IEEE journal of solid-state circuits, , Vol.47 (6), p.1355-1368

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IEEE_Xplore

A 0.18- $muhbox m$ CMOS Bioluminescence Detection Lab-on-Chip

IEEE journal of solid-state circuits, 2006-03, Vol.41 (3), p.651-662

2006

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0.18- $muhboxm$ Nondestructive Readout FeRAM Using Charge Compensation Technique

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2616-2621

2005

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A 0.18-µm CMOS, 91%-Efficiency, 2-A Scalable Buck-Boost DC-DC Converter for LED Drivers

IEEE transactions on power electronics, 2014-10, Vol.29 (10), p.5392-5398

2014

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IEEE_Xplore

A 0.33 V 683 \mu K-Band Transformer-Based Receiver Front-End in 65 nm CMOS Technology

IEEE microwave and wireless components letters, 2015-03, Vol.25 (3), p.184-186

2015

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IEEE_Xplore

A 0.4-mW, 4.7-ps Resolution Single-Loop TDC Using a Half-Delay Time Integrator

IEEE transactions on very large scale integration (VLSI) systems, 2016-03, Vol.24 (3), p.1184-1188

2016

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A 0.4-V 0.93-nW/kHz Relaxation Oscillator Exploiting Comparator Temperature-Dependent Delay to Achieve 94-ppm/°C Stability

IEEE journal of solid-state circuits, 2018-10, Vol.53 (10), p.3004-3011

2018

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IEEE_Xplore

A 0.5-1.7 GHz low phase noise ring-oscillator-based PLL for mixed-signal SoCs

Journal of semiconductors, 2010-09, Vol.31 (9), p.74-78

矫逸书周玉梅蒋见花吴斌

2010

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A 0.5-V 0.4-2.24-GHz Inductorless Phase-Locked Loop in a System-on-Chip

IEEE transactions on circuits and systems. I, Regular papers, 2011-05, Vol.58 (5), p.849-859

2011

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IEEE_Xplore

0.5-V Low- V CMOS Preamplifier for Low-Power and High-Speed Gigabit-DRAM Arrays

IEEE journal of solid-state circuits, 2010-11, Vol.45 (11), p.2348-2355

2010

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IEEE_Xplore

0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy

IEEE electron device letters, 2003-09, Vol.24 (9), p.538-540

2003

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IEEE_Xplore

A 0.6-V 82-dB 28.6-$\mu$W Continuous-Time Audio Delta-Sigma Modulator

IEEE journal of solid-state circuits, 2011-10, Vol.46 (10), p.2326-2335

2011

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A 0.76 mm2 0.22 nJ/Pixel DL-Assisted 4K Video Encoder LSI for Quality-of-Experience Over Smartphones

IEEE solid-state circuits letters, 2018-12, Vol.1 (12), p.221-224

2018

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IEEE_Xplore

A 0.79- }^ 29-mW Real-Time Face Detection Core

IEEE journal of solid-state circuits, 2007-04, Vol.42 (4), p.790-797

2007

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IEEE_Xplore

0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time

Journal of physics. C, Solid state physics, 1985-09, Vol.18 (26), p.L795-L801

1985

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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET

IEEE electron device letters, 2009-07, Vol.30 (7), p.700-702

2009

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IEEE_Xplore

0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm

Electronics letters, 2004, Vol.40 (10), p.601

2004

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A 0.83- \mu QRS Detection Processor Using Quadratic Spline Wavelet Transform for Wireless ECG Acquisition in 0.35- \mu CMOS

IEEE transactions on biomedical circuits and systems, 2012-12, Vol.6 (6), p.586-595

2012

Link zum Volltext
IEEE_Xplore

0–90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC

Electronics letters, 1995-08, Vol.31 (17), p.1430-1431

1995

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0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

Semiconductor science and technology, 2000-11, Vol.15 (11), p.1061-1064

2000

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A 0.0056-mm2 −249-dB-FoM All-Digital MDLL Using a Block-Sharing Offset-Free Frequency-Tracking Loop and Dual Multiplexed-Ring VCOs

A 0.01-mm2 Mostly Digital Capacitor-Less AFE for Distributed Autonomous Neural Sensor Nodes

A 0.13- \mu CMOS Low-Power Capacitor-Less LDO Regulator Using Bulk-Modulation Technique

A 0.13- \mu \text CMOS Dynamically Reconfigurable Charge Pump for Electrostatic MEMS Actuation

0.16nm spaced multi-wavelength Brillouin fiber laser in a figure-of-eight configuration

A 0.18- \mu} Monolithic Li-Ion Battery Charger for Wireless Devices Based on Partial Current Sensing and Adaptive Reference Voltage

A 0.18- $muhbox m$ CMOS Bioluminescence Detection Lab-on-Chip

0.18- $muhboxm$ Nondestructive Readout FeRAM Using Charge Compensation Technique

A 0.18-µm CMOS, 91%-Efficiency, 2-A Scalable Buck-Boost DC-DC Converter for LED Drivers

A 0.33 V 683 \mu K-Band Transformer-Based Receiver Front-End in 65 nm CMOS Technology

A 0.4-mW, 4.7-ps Resolution Single-Loop TDC Using a Half-Delay Time Integrator

A 0.4-V 0.93-nW/kHz Relaxation Oscillator Exploiting Comparator Temperature-Dependent Delay to Achieve 94-ppm/°C Stability

A 0.5-1.7 GHz low phase noise ring-oscillator-based PLL for mixed-signal SoCs

A 0.5-V 0.4-2.24-GHz Inductorless Phase-Locked Loop in a System-on-Chip

0.5-V Low- V CMOS Preamplifier for Low-Power and High-Speed Gigabit-DRAM Arrays

0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy

A 0.6-V 82-dB 28.6-$\mu$W Continuous-Time Audio Delta-Sigma Modulator

A 0.76 mm2 0.22 nJ/Pixel DL-Assisted 4K Video Encoder LSI for Quality-of-Experience Over Smartphones

A 0.79- }^ 29-mW Real-Time Face Detection Core

0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET

0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm

A 0.83- \mu QRS Detection Processor Using Quadratic Spline Wavelet Transform for Wireless ECG Acquisition in 0.35- \mu CMOS

0–90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC

0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

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