UB Paderborn / Katalog / Suche / in CDI

1 – 12 von 12

Sortiert nach

Silicon Carbide Nanosprings

Nano letters, 2003-07, Vol.3 (7), p.983-987

2003

Volltextzugriff (PDF)

Controlled Growth of Gold Nanoparticles on Silica Nanowires

Journal of materials research, 2005-11, Vol.20 (11), p.3021-3027

2005

Volltextzugriff (PDF)

Metal coatings on SiC nanowires by plasma-enhanced chemical vapor deposition

Journal of materials research, 2005-03, Vol.20 (3), p.549-553

2005

Volltextzugriff (PDF)

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

Applied physics. A, Materials science & processing, 1998-09, Vol.67 (3), p.335-342

1998

Volltextzugriff (PDF)

Electronic and dynamic studies of boron carbide nanowires

Physical review. B, Condensed matter, 1999-08, Vol.60 (7), p.4874-4879

1999

Volltextzugriff (PDF)

Band gaps of doped and undoped films of molecular icosahedra

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 1996-10, Vol.217 (1-2), p.64-68

1996

Volltextzugriff (PDF)

Growth and characterization of boron carbide nanowires

Journal of materials science letters, 1999-03, Vol.18 (5), p.349-351

1999

Volltextzugriff (PDF)

Correlation between screening and electron effective mass across the nonmetal-metal transition in ultrathin films

Physical review. B, Condensed matter, 1995-10, Vol.52 (15), p.11380-11386

1995

Volltextzugriff (PDF)

Strain-induced distortion of the bulk bands of gadolinium

Physical review. B, Condensed matter, 1996-12, Vol.54 (23), p.16460-16463

1996

Volltextzugriff (PDF)

Spin-polarized photoemission studies of the exchange splitting of the Gd 5d electrons near the Curie temperature

Physical review. B, Condensed matter, 1995-05, Vol.51 (19), p.13895-13898

1995

Volltextzugriff (PDF)

Occupied surface-state bands of Bi(1×1) overlayers on an InAs(110) surface grown by molecular-beam epitaxy

Physical review. B, Condensed matter, 1993-02, Vol.47 (7), p.3751-3759

1993

Volltextzugriff (PDF)

InAs(110)-p(1 x 1)-Sb(1 ML): Electronic structure and surface bonding

Physical review. B, Condensed matter, 1995-05, Vol.51 (20), p.14271-14277

1995

Volltextzugriff (PDF)

1 – 12 von 12

Suche als RSS-Feed

Aktive Filter

ThemaChemical Vapor Deposition

ThemaMaterials Science, Multidisciplinary

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(8)
Mit Volltextzugriff
(12)

Publikationsform

Artikel
(12)

Sprache

Englisch
(12)
Japanisch
(3)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Silicon Carbide Nanosprings

Controlled Growth of Gold Nanoparticles on Silica Nanowires

Metal coatings on SiC nanowires by plasma-enhanced chemical vapor deposition

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

Electronic and dynamic studies of boron carbide nanowires

Band gaps of doped and undoped films of molecular icosahedra

Growth and characterization of boron carbide nanowires

Correlation between screening and electron effective mass across the nonmetal-metal transition in ultrathin films

Strain-induced distortion of the bulk bands of gadolinium

Spin-polarized photoemission studies of the exchange splitting of the Gd 5d electrons near the Curie temperature

Occupied surface-state bands of Bi(1×1) overlayers on an InAs(110) surface grown by molecular-beam epitaxy

InAs(110)-p(1 x 1)-Sb(1 ML): Electronic structure and surface bonding

Aktive Filter

Suchergebnisse filtern