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A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

2019 Symposium on VLSI Technology, 2019, p.T222-T223

2019

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IEEE_Xplore

A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node

2018 IEEE Symposium on VLSI Technology, 2018, p.45-46

2018

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IEEE_Xplore

Sub-60 mV/dec ferroelectric HZO MoS2 negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.23.5.1-23.5.4

2017

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IEEE_Xplore

Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2

2023 Silicon Nanoelectronics Workshop (SNW), 2023, p.47-48

2023

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IEEE_Xplore

Moment-based analysis of biochemical networks in a heterogeneous population of communicating cells

2019 IEEE 58th Conference on Decision and Control (CDC), 2019, p.939-944

2019

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New salicidation technology PtSi for strained SiGe device

Microelectronic engineering, 2005-03, Vol.78, p.319-323

2005

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Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation

2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2021, p.1-2

2021

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Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect

Semiconductor science and technology, 2005-08, Vol.20 (8), p.673-676, Article 673

2005

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Technological requirements for a lateral SiGe HBT technology including theoretical performance predictions relative to vertical SiGe HBTs

IEEE transactions on electron devices, 2002-03, Vol.49 (3), p.449-456

2002

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IEEE_Xplore

Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.15.4.1-15.4.4

2017

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IEEE_Xplore

High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1961-1969

2003

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IEEE_Xplore

Research highlights from the Asian Seas International Acoustics Experiment in the South China Sea

IEEE journal of oceanic engineering, 2004-10, Vol.29 (4), p.1067-1074

2004

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IEEE_Xplore

Acoustic intensity fluctuations induced by South China Sea internal tides and solitons

IEEE journal of oceanic engineering, 2004-10, Vol.29 (4), p.1249-1263

2004

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IEEE_Xplore

An electrical method for measuring the difference bandgap across the neutral base in SiGe HBT's

IEEE transactions on electron devices, 2000-04, Vol.47 (4), p.797-804

2000

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IEEE_Xplore

Internal tide and nonlinear internal wave behavior at the continental slope in the northern south China Sea

IEEE journal of oceanic engineering, 2004-10, Vol.29 (4), p.1105-1130

2004

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IEEE_Xplore

Internal solitons in the northeastern south China Sea. Part I: sources and deep water propagation

IEEE journal of oceanic engineering, 2004-10, Vol.29 (4), p.1157-1181

2004

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IEEE_Xplore

Nitride Nanocolumns for the Development of Light-Emitting Diode

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.71-78

2010

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IEEE_Xplore

3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.15.3.1-15.3.4

2019

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IEEE_Xplore

A case study of internal solitary wave propagation during ASIAEX 2001

IEEE journal of oceanic engineering, 2004-10, Vol.29 (4), p.1144-1156

2004

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IEEE_Xplore

Solitons northeast of Tung-Sha Island during the ASIAEX pilot studies

IEEE journal of oceanic engineering, 2004-10, Vol.29 (4), p.1182-1199

2004

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IEEE_Xplore

Mining item-item and between-set correlated association rules

Frontiers of information technology & electronic engineering, 2011-02, Vol.12 (2), p.96-109

2011

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Barotropic tide in the northeast South China Sea

IEEE journal of oceanic engineering, 2004-10, Vol.29 (4), p.1075-1086

2004

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IEEE_Xplore

Optimization of Alloy Composition for High-Performance Strained-Si–SiGe N-Channel MOSFETs

IEEE transactions on electron devices, 2004-07, Vol.51 (7), p.1156-1163

2004

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Control of the color contrast of a polychromatic light-emitting device with CdSe-ZnS nano-crystals on an InGaN-GaN quantum-well structure

IEEE photonics technology letters, 2006-03, Vol.18 (5), p.712-714

2006

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IEEE_Xplore

Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25μm heterostructure CMOS process

Materials science in semiconductor processing, 2005-02, Vol.8 (1-3), p.343-346

2005

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A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node

Sub-60 mV/dec ferroelectric HZO MoS2 negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance

Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2

Moment-based analysis of biochemical networks in a heterogeneous population of communicating cells

New salicidation technology PtSi for strained SiGe device

Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation

Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect

Technological requirements for a lateral SiGe HBT technology including theoretical performance predictions relative to vertical SiGe HBTs

Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

Research highlights from the Asian Seas International Acoustics Experiment in the South China Sea

Acoustic intensity fluctuations induced by South China Sea internal tides and solitons

An electrical method for measuring the difference bandgap across the neutral base in SiGe HBT's

Internal tide and nonlinear internal wave behavior at the continental slope in the northern south China Sea

Internal solitons in the northeastern south China Sea. Part I: sources and deep water propagation

Nitride Nanocolumns for the Development of Light-Emitting Diode

3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

A case study of internal solitary wave propagation during ASIAEX 2001

Solitons northeast of Tung-Sha Island during the ASIAEX pilot studies

Mining item-item and between-set correlated association rules

Barotropic tide in the northeast South China Sea

Optimization of Alloy Composition for High-Performance Strained-Si–SiGe N-Channel MOSFETs

Control of the color contrast of a polychromatic light-emitting device with CdSe-ZnS nano-crystals on an InGaN-GaN quantum-well structure

Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25μm heterostructure CMOS process

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