UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

A contribution to the theory of beam-induced current characterization of dislocations

Journal of applied physics, 1991-05, Vol.69 (9), p.6387-6393

PASEMANN, L

1991

Volltextzugriff (PDF)

Theory of electron-beam-induced current and cathodoluminescence imaging of crystal defects: some new results

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-05, Vol.24 (1), p.15-22

Pasemann, L

1994

Volltextzugriff (PDF)

A contribution to the theory of the ebic contrast of lattice defects in semiconductors

Ultramicroscopy, 1981, Vol.6 (3), p.237-250

Pasemann, L.

1981

Volltextzugriff (PDF)

Theoretical study of the temperature dependence of EBIC contrast from individual, surface-parallel dislocations in a Schottky diode

Physica status solidi. A, Applied research, 1984-07, Vol.84 (1), p.133-142

Pasemann, L.

1984

Volltextzugriff (PDF)

On the EBIC contrast of dislocations

Kristall und Technik, 1981, Vol.16 (2), p.147-148

Pasemann, L.

1981

Volltextzugriff (PDF)

A theoretical study of the determination of the depth of a dislocation by combined use of EBIC and CL technique

Ultramicroscopy, 1986, Vol.19 (1), p.15-22

1986

Volltextzugriff (PDF)

A non-diagonally screened model potential for semiconductors applied to the band structure calculation of Si

Physica Status Solidi (b), 1977-11, Vol.84 (1), p.175-188

Pasemann, L.

1977

Volltextzugriff (PDF)

On the Screening of the Ions in Solids. Band Structure Calculations of Si with Several Screening Variants

physica status solidi (b), 1978-06, Vol.87 (2), p.553-564

Pasemann, L.

1978

Volltextzugriff (PDF)

EBIC Contrast of Surface-Parallel Dislocations in a Planar Semiconductor Diode with Large Surface Recombination

Physica status solidi. A, Applied research, 1982-02, Vol.69 (2), p.K199-K203

Pasemann, L.

1982

Volltextzugriff (PDF)

Theoretical Investigations of Combined EBIC, LBIC, CL, and PL Experiments. The Information Depth of the PL Signal

Physica status solidi. A, Applied research, 1987-08, Vol.102 (2), p.819-828

1987

Volltextzugriff (PDF)

Cathodoluminescence measurements using the scanning electron microscope for the determination of semiconductor parameters

Physica status solidi. A, Applied research, 1987-06, Vol.101 (2), p.611-618

1987

Volltextzugriff (PDF)

THEORETICAL DESCRIPTION OF THE INFLUENCE OF DISLOCATIONS ON THE LUMINESCENCE OF LIGHT-EMITTING DIODES

Le Journal de Physique Colloques, 1983-09, Vol.44 (C4), p.C4-C4-435

Pasemann, L.

1983

Volltextzugriff (PDF)

Theoretical Study of the Information Depth of the Cathodoluminescence Signal in Semiconductor Materials

Physica status solidi. A, Applied research, 1984-10, Vol.85 (2), p.641-648

1984

Volltextzugriff (PDF)

Some remarks on the review « Quantitative evaluation of the EBIC contrast of dislocations » by C. Donolato

Journal de physique. Lettres, 1984, Vol.45 (3), p.133-136

Pasemann, L.

1984

Volltextzugriff (PDF)

Theoretical description of the external electroluminescence around a single dislocation oriented perpendicular to the surface

Crystal research and technology (1979), 1984, Vol.19 (2), p.195-200

1984

Volltextzugriff (PDF)

EBIC Contrast of Surface-Parallel Dislocations in a Planar Semiconductor Diode with Large Surface Recombination

Physica status solidi. A, Applied research, 1982-02, Vol.69 (2), p.K199-K203

Pasemann, L.

1982

Volltextzugriff (PDF)

Interpretation of the EBIC contrast of dislocations in silicon

Physica status solidi. A, Applied research, 1982-03, Vol.70 (1), p.197-209

1982

Volltextzugriff (PDF)

A contribution to the theory of the EBIC contrast of lattice defects in semiconductors

Ultramicroscopy, 1981, Vol.6 (1), p.237-250

Pasemann, L.

1981

Volltextzugriff (PDF)

Band structure calculation of ZnSiP2

physica status solidi (b), 1976-10, Vol.77 (2), p.527-533

1976

Volltextzugriff (PDF)

On an Approximation for the Energy Gap at Γ of A2 B4 C52 Compounds with Chalcopyrite Structure

physica status solidi (b), 1973-04, Vol.56 (2), p.K69-K73

Pasemann, L.

1973

Volltextzugriff (PDF)

On an Approximation for the Energy Gap at Γ of A 2 B 4 C 5 2 Compounds with Chalcopyrite Structure

physica status solidi (b), 1973-04, Vol.56 (2)

Pasemann, L.

1973

Volltextzugriff (PDF)

Interpretation of the EBIC contrast of dislocations in silicon

Physica status solidi. A, Applied research, 1982-03, Vol.70 (1), p.197-209

1982

Volltextzugriff (PDF)

Comment on « EBIC contrast theory of dislocations: intrinsic recombination properties

Revue de physique appliquée, 1990, Vol.25 (11), p.1107-1108

1990

Volltextzugriff (PDF)

DISCUSSION OF THE CONVERGENCE PROPERTIES OF THE PERTURBATION SERIES USED IN THE CALCULATION OF EBIC- AND CL-CONTRASTS

Le Journal de Physique IV, 1991-12, Vol.1 (C6), p.C6-C6-50

1991

Volltextzugriff (PDF)

Band structure calculation of ZnSiP 2

physica status solidi (b), 1976-10, Vol.77 (2), p.527-533

1976

Volltextzugriff (PDF)

1 – 25 von 29

Menü

Weitere Dienste

Einstellungen

A contribution to the theory of beam-induced current characterization of dislocations

Theory of electron-beam-induced current and cathodoluminescence imaging of crystal defects: some new results

A contribution to the theory of the ebic contrast of lattice defects in semiconductors

Theoretical study of the temperature dependence of EBIC contrast from individual, surface-parallel dislocations in a Schottky diode

On the EBIC contrast of dislocations

A theoretical study of the determination of the depth of a dislocation by combined use of EBIC and CL technique

A non-diagonally screened model potential for semiconductors applied to the band structure calculation of Si

On the Screening of the Ions in Solids. Band Structure Calculations of Si with Several Screening Variants

EBIC Contrast of Surface-Parallel Dislocations in a Planar Semiconductor Diode with Large Surface Recombination

Theoretical Investigations of Combined EBIC, LBIC, CL, and PL Experiments. The Information Depth of the PL Signal

Cathodoluminescence measurements using the scanning electron microscope for the determination of semiconductor parameters

THEORETICAL DESCRIPTION OF THE INFLUENCE OF DISLOCATIONS ON THE LUMINESCENCE OF LIGHT-EMITTING DIODES

Theoretical Study of the Information Depth of the Cathodoluminescence Signal in Semiconductor Materials

Some remarks on the review « Quantitative evaluation of the EBIC contrast of dislocations » by C. Donolato

Theoretical description of the external electroluminescence around a single dislocation oriented perpendicular to the surface

EBIC Contrast of Surface-Parallel Dislocations in a Planar Semiconductor Diode with Large Surface Recombination

Interpretation of the EBIC contrast of dislocations in silicon

A contribution to the theory of the EBIC contrast of lattice defects in semiconductors

Band structure calculation of ZnSiP2

On an Approximation for the Energy Gap at Γ of A2 B4 C52 Compounds with Chalcopyrite Structure

On an Approximation for the Energy Gap at Γ of A 2 B 4 C 5 2 Compounds with Chalcopyrite Structure

Interpretation of the EBIC contrast of dislocations in silicon

Comment on « EBIC contrast theory of dislocations: intrinsic recombination properties

DISCUSSION OF THE CONVERGENCE PROPERTIES OF THE PERTURBATION SERIES USED IN THE CALCULATION OF EBIC- AND CL-CONTRASTS

Band structure calculation of ZnSiP 2

Aktive Filter

Suchergebnisse filtern