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Machine-learning guided discovery of a new thermoelectric material

Scientific reports, 2019-02, Vol.9 (1), p.2751-2751, Article 2751

2019

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Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes

Applied physics letters, 2002-09, Vol.81 (13), p.2397-2399

2002

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Luminescence Centers in Indium-Implanted Silicon

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 3A), p.1203-1208

2002

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Comparison of Iron Gettering Effectiveness in Silicon between Ion-Implantation-Induced Damage and Poly-Crystalline Silicon

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 12), p.7267-7271

2002

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Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2235

2005

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Near-band-gap photoluminescence of Si1-xGex alloys grown on Si(100) by molecular beam epitaxy

Applied physics letters, 1990-10, Vol.57 (18), p.1925-1927

1990

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SIMS characterization of hydrogen transport through SiO2 by low-temperature hydrogen annealing

Applied surface science, 2003-05, Vol.212-213, p.804-808

2003

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Defect-related photoluminescence in indium-implanted silicon

Physica. B, Condensed matter, 2007-12, Vol.401, p.134-137

2007

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Photoluminescence of Low-Energy B + -Implanted Silicon under Ultraviolet Light Excitation

Japanese Journal of Applied Physics, 2000, Vol.39 (4S), p.2198

2000

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Erratum: “Photoluminescence of Low-Energy B + -Implanted Silicon under Ultraviolet Light Excitation”

Japanese Journal of Applied Physics, 2000-07, Vol.39 (7R), p.4253

2000

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Interaction between transition metals and point defect clusters in silicon characterized by photoluminescence

Physica. B, Condensed matter, 2006-04, Vol.376, p.137-141

2006

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Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growth

Applied surface science, 2008-07, Vol.254 (19), p.6165-6167

2008

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Defect-related photoluminescence in indium-implanted silicon

Physica. B, Condensed matter, 2007, Vol.401-02, p.134-137

2007

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A Self-propelled Catheter Capable of Generating Travelling Waves with Steering Function by Mono-Line Drive

2018 IEEE International Conference on Robotics and Automation (ICRA), 2018, p.38-43

2018

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Interaction between transition metals and point defect clusters in silicon characterized by photoluminescence

Physica. B, Condensed matter, 2006, Vol.376-77, p.137-141

2006

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Dislocation-related photoluminescence in Si1-xGex/Si(100) grown by molecular beam epitaxy

Journal of crystal growth, 1991-05, Vol.111 (1-4), p.920-924

1991

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Hydrogen redistribution in CVD SiO 2 during post-oxidation annealing investigated by SIMS

Applied surface science, 2004-06, Vol.231, p.758-761

2004

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Photoluminescence of Si1-xGex/Si quantum well structures

Japanese journal of applied physics, 1991-12, Vol.30 (12B), p.3601-3605

1991

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Hydrogen redistribution in CVD SiO2 during post-oxidation annealing investigated by SIMS

Applied surface science, 2004-06, Vol.231-232, p.758-761

2004

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Luminescence Centers in High-Energy Ion-Implanted Silicon

Materials science forum, 1997-12, Vol.258-263, p.587-592

1997

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Non-contact measurement of propagation characteristics in human wrist using pass-through airborne ultrasound

2014 IEEE International Ultrasonics Symposium, 2014, p.1396-1399

2014

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Hydrogen redistribution in CVD SiO2 during post-oxidation annealing investigated by SIMS

Applied surface science, 2004, Vol.231-32, p.758-761

2004

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SIMS characterization of hydrogen transport through SiO2 by low-temperature hydrogen annealing

Applied surface science, 2003, Vol.212-13, p.804-808

2003

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Band-edge emission from strained SiGe alloy layers on Ge(100) substrates

Applied physics letters, 1994-08, Vol.65 (5), p.601-603

1994

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Near-band-gap photoluminescence of Si1− x Ge x alloys grown on Si(100) by molecular beam epitaxy

Applied physics letters, 1990-10, Vol.57 (18), p.1925-1927

1990

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Machine-learning guided discovery of a new thermoelectric material

Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes

Luminescence Centers in Indium-Implanted Silicon

Comparison of Iron Gettering Effectiveness in Silicon between Ion-Implantation-Induced Damage and Poly-Crystalline Silicon

Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method

Near-band-gap photoluminescence of Si1-xGex alloys grown on Si(100) by molecular beam epitaxy

SIMS characterization of hydrogen transport through SiO2 by low-temperature hydrogen annealing

Defect-related photoluminescence in indium-implanted silicon

Photoluminescence of Low-Energy B + -Implanted Silicon under Ultraviolet Light Excitation

Erratum: “Photoluminescence of Low-Energy B + -Implanted Silicon under Ultraviolet Light Excitation”

Interaction between transition metals and point defect clusters in silicon characterized by photoluminescence

Fabrication of Ge-channel MOSFETs by using replacement gate process and selective epitaxial growth

Defect-related photoluminescence in indium-implanted silicon

A Self-propelled Catheter Capable of Generating Travelling Waves with Steering Function by Mono-Line Drive

Interaction between transition metals and point defect clusters in silicon characterized by photoluminescence

Dislocation-related photoluminescence in Si1-xGex/Si(100) grown by molecular beam epitaxy

Hydrogen redistribution in CVD SiO 2 during post-oxidation annealing investigated by SIMS

Photoluminescence of Si1-xGex/Si quantum well structures

Hydrogen redistribution in CVD SiO2 during post-oxidation annealing investigated by SIMS

Luminescence Centers in High-Energy Ion-Implanted Silicon

Non-contact measurement of propagation characteristics in human wrist using pass-through airborne ultrasound

Hydrogen redistribution in CVD SiO2 during post-oxidation annealing investigated by SIMS

SIMS characterization of hydrogen transport through SiO2 by low-temperature hydrogen annealing

Band-edge emission from strained SiGe alloy layers on Ge(100) substrates

Near-band-gap photoluminescence of Si1− x Ge x alloys grown on Si(100) by molecular beam epitaxy

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