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Highly sensitive graphene biosensor by monomolecular self-assembly of receptors on graphene surface

Applied physics letters, 2017-05, Vol.110 (20)

2017

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Strength of Onyx-based composite 3D printing materials according to fiber reinforcement

Frontiers in materials, 2023-04, Vol.10

2023

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Intestinal Epithelial Deletion of Sphk1 Prevents Colitis-Associated Cancer Development by Inhibition of Epithelial STAT3 Activation

Digestive diseases and sciences, 2020-08, Vol.65 (8), p.2284-2293

2020

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Implementation of low Vgs (1.8V) 12V RF-LDMOS for high-frequency DC-DC converter applications

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.125-128

2012

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(Bi,La)4Ti3O12 as a ferroelectric layer and SrTa2O6 as a buffer layer for metal-ferroelectric-metal-insulator-semiconductor field-effect transistor

Journal of the Ceramic Society of Japan, 2009-01, Vol.117 (1369), p.1032-1034

2009

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Implementation of buffered Super-Junction LDMOS in a 0.18um BCD process

2009 21st International Symposium on Power Semiconductor Devices & IC's, 2009, p.192-195

2009

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Electrical Properties of Metal-Ferroelectric-Semiconductor Structures Based on Ferroelectric Polyvinylidene Fluoride (PVDF)

Journal of the Korean Physical Society, 2007-08, Vol.51 (92), p.723

2007

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BD180 - a new 0.18 μm BCD (Bipolar-CMOS-DMOS) Technology from 7V to 60V

2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.64-67

2008

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BD180LV - 0.18 μm BCD technology with best-in-class LDMOS from 7V to 30V

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.71-74

2010

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A versatile 30V analog CMOS process in a 0.18μm technology for power management application

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.219-222

2011

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Sol-Gel Deposited LaZrOx Buffer Layer for Ferroelectric Thin Films

Journal of the Korean Physical Society, 2007, 51(II), , pp.100-104

2007

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Improvement of Sol--Gel Derived PbZrxTi1-xO3 Film Properties Using Thermal Press Treatment

Jpn J Appl Phys, 2010-09, Vol.49 (9), p.09MA08-09MA08-3

2010

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Implementation of 85V High Side LDMOS with n-layer in a 0.35um BCD Process

2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.103-106

2008

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CHARACTERIZATION OF METAL-FERROELECTRIC-SEMICONDUCTOR STRUCTURE USING FERROELECTRIC POLYMER POLYVINYLIDENE FLUORIDE-TRIFLUOROETHYLENE (PVDF-TrFE) (51/49)

Integrated ferroelectrics, 2008-01, Vol.98 (1), p.121-127

2008

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A Study on Linking Korean Wave and Corporate Image on Country Image, Perceived Quality: A Study of China

Asia Marketing Journal (Online), 2018, Vol.20 (1), p.69-87

2018

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Ferroelectric properties of SrBi2Ta2O9 thin films on Si (100) with a LaZrO x buffer layer

Journal of electroceramics, 2009-02, Vol.22 (1-3), p.276-280

2009

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Fabrication and characterization of Au/SBT/LZO/Si MFIS structure

Journal of electroceramics, 2009-10, Vol.23 (2-4), p.284-288

2009

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Schottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects

ACS applied materials & interfaces, 2020-01, Vol.12 (2), p.2854-2861

2020

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Functional identification of a protein inhibitor of neuronal nitric oxide synthase of Taenia solium metacestode

Molecular and biochemical parasitology, 2007-01, Vol.151 (1), p.41-51

2007

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Fabrication and Characterization of MFIS-FET Using Au/BLT/LZO/Si Structures

Ferroelectrics, 2008-01, Vol.368 (1), p.81-89

2008

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Thin Film Properties of Sol-Gel Derived High-K Lanthanum-Doped Zirconium Oxides

Ferroelectrics, 2009-01, Vol.384 (1), p.126-133

2009

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Low Vgs P-ch LDMOS with Sallow Pwell from 8V to 60V

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.177-180

2010

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A new 8V - 60V rated low Vgs NLDMOS structure with enhanced specific on-resistance

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.245-248

2010

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Rare case of pancreatic cancer with leptomeningeal carcinomatosis

World journal of gastroenterology : WJG, 2015-01, Vol.21 (3), p.1020-1023

2015

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Schottky Barrier Variable Graphene/Multilayer-MoS 2 Heterojunction Transistor Used to Overcome Short Channel Effects

ACS applied materials & interfaces, 2020-01, Vol.12 (2), p.2854-2861

2020

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Highly sensitive graphene biosensor by monomolecular self-assembly of receptors on graphene surface

Strength of Onyx-based composite 3D printing materials according to fiber reinforcement

Intestinal Epithelial Deletion of Sphk1 Prevents Colitis-Associated Cancer Development by Inhibition of Epithelial STAT3 Activation

Implementation of low Vgs (1.8V) 12V RF-LDMOS for high-frequency DC-DC converter applications

(Bi,La)4Ti3O12 as a ferroelectric layer and SrTa2O6 as a buffer layer for metal-ferroelectric-metal-insulator-semiconductor field-effect transistor

Implementation of buffered Super-Junction LDMOS in a 0.18um BCD process

Electrical Properties of Metal-Ferroelectric-Semiconductor Structures Based on Ferroelectric Polyvinylidene Fluoride (PVDF)

BD180 - a new 0.18 μm BCD (Bipolar-CMOS-DMOS) Technology from 7V to 60V

BD180LV - 0.18 μm BCD technology with best-in-class LDMOS from 7V to 30V

A versatile 30V analog CMOS process in a 0.18μm technology for power management application

Sol-Gel Deposited LaZrOx Buffer Layer for Ferroelectric Thin Films

Improvement of Sol--Gel Derived PbZrxTi1-xO3 Film Properties Using Thermal Press Treatment

Implementation of 85V High Side LDMOS with n-layer in a 0.35um BCD Process

CHARACTERIZATION OF METAL-FERROELECTRIC-SEMICONDUCTOR STRUCTURE USING FERROELECTRIC POLYMER POLYVINYLIDENE FLUORIDE-TRIFLUOROETHYLENE (PVDF-TrFE) (51/49)

A Study on Linking Korean Wave and Corporate Image on Country Image, Perceived Quality: A Study of China

Ferroelectric properties of SrBi2Ta2O9 thin films on Si (100) with a LaZrO x buffer layer

Fabrication and characterization of Au/SBT/LZO/Si MFIS structure

Schottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects

Functional identification of a protein inhibitor of neuronal nitric oxide synthase of Taenia solium metacestode

Fabrication and Characterization of MFIS-FET Using Au/BLT/LZO/Si Structures

Thin Film Properties of Sol-Gel Derived High-K Lanthanum-Doped Zirconium Oxides

Low Vgs P-ch LDMOS with Sallow Pwell from 8V to 60V

A new 8V - 60V rated low Vgs NLDMOS structure with enhanced specific on-resistance

Rare case of pancreatic cancer with leptomeningeal carcinomatosis

Schottky Barrier Variable Graphene/Multilayer-MoS 2 Heterojunction Transistor Used to Overcome Short Channel Effects

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